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48 W Power Field Effect Transistors (FET) 17

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTDV3055L104-1G by Onsemi

NTDV3055L104-1G

Onsemi

NTDV3055L104-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and a built-in DIODE. Operating at up to 175 °C, this N-CHANNEL transistor has a max power dissipation of 48W in a RECTANGULAR package.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.104 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

48 W

45 A

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTDV3055L104T4G by Onsemi

NTDV3055L104T4G

Onsemi

NTDV3055L104T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with a built-in diode in a PLASTIC/EPOXY package. Operating in enhancement mode, this MOSFET has a max power dissipation of 48W and can handle up to 175 °C temperature.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.104 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

48 W

45 A

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NVD3055-094T4G by Onsemi

NVD3055-094T4G

Onsemi

NVD3055-094T4G by Onsemi is an N-channel Power FET with a 60V DS breakdown voltage and 45A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.094 ohm max drain-source resistance, and operates in enhancement mode.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.094 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48 W

45 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

FQD6N40CTF by Fairchild Semiconductor

FQD6N40CTF

Fairchild Semiconductor

FQD6N40CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 18A and Avalanche Energy Rating of 270mJ. With a max power dissipation of 48W and operating temperature up to 150°C, it offers reliable performance in various electronic systems.

FAST SWITCHING

270 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

400 V

4.5 A

4.5 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

48 W

18 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD3055L104 by Onsemi

NTD3055L104

Onsemi

NTD3055L104 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). With a max power dissipation of 48W and operating temperature range of -55 to 175 °C, it is ideal for various electronic designs requiring high-performance transistors.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.104 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

48 W

45 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD60N02RT4 by Onsemi

NTD60N02RT4

Onsemi

NTD60N02RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 48W at 150 °C.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

32 A

32 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

48 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD60N02R by Onsemi

NTD60N02R

Onsemi

NTD60N02R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm On Resistance. This ENHANCEMENT MODE transistor has a 48W Power Dissipation rating and operates up to 150 °C, making it ideal for high-power electronic circuits.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

32 A

32 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

48 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD60N02RT4G by Onsemi

NTD60N02RT4G

Onsemi

NTD60N02RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm Drain-Source Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 48W, making it ideal for high-performance electronic devices.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

32 A

32 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD60N02RG by Onsemi

NTD60N02RG

Onsemi

NTD60N02RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE and has a max power dissipation of 48W.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

32 A

32 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD3055L104G by Onsemi

NTD3055L104G

Onsemi

NTD3055L104G by Onsemi is an N-channel power FET with a 60V DS breakdown voltage and 45A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.104 ohm max RDS(on), and operates in enhancement mode. Suitable for surface mount designs with a small outline package style.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.104 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48 W

45 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

SINGLE

40

SWITCHING

SILICON

NTD3055L104-1G by Onsemi

NTD3055L104-1G

Onsemi

NTD3055L104-1G by Onsemi is a power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 45A.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.104 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

48 W

45 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

BSC059N03SG by Infineon Technologies

BSC059N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Terminal Finish: MATTE TIN; Terminal Position: DUAL;

LOGIC LEVEL COMPATIBLE

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

73 A

17.5 A

.0086 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

IPB25N06S3-25 by Infineon Technologies

IPB25N06S3-25

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Avalanche Energy Rating (EAS): 60 mJ; JESD-30 Code: R-PSSO-G2;

AVALANCHE RATED

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

25 A

25 A

.0251 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

48 W

100 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPI25N06S3-25 by Infineon Technologies

IPI25N06S3-25

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Transistor Application: SWITCHING; No. of Elements: 1;

AVALANCHE RATED

60 mJ

SINGLE WITH BUILT-IN DIODE

55 V

25 A

25 A

.0251 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

48 W

100 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTMFS4899NFT1G by Onsemi

NTMFS4899NFT1G

Onsemi

NTMFS4899NFT1G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 188A Pulsed Drain Current, and 0.0075 ohm Drain-Source On Resistance. With a max power dissipation of 48W, it operates in temperatures ranging from -55 to 150 °C.

84 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

75 A

10.4 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

165 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48 W

188 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NVATS5A106PLZT4G by Onsemi

NVATS5A106PLZT4G

Onsemi

NVATS5A106PLZT4G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 100A and EAS of 30mJ, suitable for high-power operations. With an operating temperature range from -55 to 175 °C, it offers reliable performance in various environments.

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

33 A

33 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e6

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

48 W

100 A

AEC-Q101

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

NVATS4A102PZT4G by Onsemi

NVATS4A102PZT4G

Onsemi

NVATS4A102PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 132A IDM, 58mJ EAS, and 0.0185 ohm RDS(ON). With a temperature range of -55 to 175 °C, it is suitable for automotive (AEC-Q101) and industrial applications.

58 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

44 A

44 A

.0185 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e6

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

48 W

132 A

AEC-Q101

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON