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350 W Power Field Effect Transistors (FET) 9

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IXTN79N20 by IXYS Corporation

IXTN79N20

IXYS Corporation

IXTN79N20 by IXYS Corp is a N-CHANNEL FET with 200V DS Breakdown Voltage, 79A ID, and 0.025 ohm RDS. Ideal for SWITCHING applications due to its 340A IDM and 350W Pd capabilities. Package style is FLANGE MOUNT with SILICON element material and ENHANCEMENT MODE operation at up to 150°C.

ISOLATED

SINGLE WITH BUILT-IN DIODE

200 V

79 A

79 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

400 W

350 W

340 A

Not Qualified

FET General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

STW55NM60N by STMicroelectronics

STW55NM60N

STMicroelectronics

STW55NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 51A max drain current, and 350W power dissipation. Ideal for high-efficiency power management in various electronic devices.

850 mJ

SINGLE WITH BUILT-IN DIODE

600 V

51 A

51 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

350 W

204 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW55NM50N by STMicroelectronics

STW55NM50N

STMicroelectronics

STW55NM50N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 54A max drain current, and 350W power dissipation. Ideal for high-efficiency power management in various electronic devices.

850 mJ

SINGLE WITH BUILT-IN DIODE

500 V

54 A

54 A

.054 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

350 W

216 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW55NM60ND by STMicroelectronics

STW55NM60ND

STMicroelectronics

STW55NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 204A IDM, 850mJ EAS, and 0.06 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 350W at 150°C.

850 mJ

SINGLE WITH BUILT-IN DIODE

600 V

51 A

51 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

350 W

204 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW200NF03 by STMicroelectronics

STW200NF03

STMicroelectronics

STW200NF03 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 120 A and a breakdown voltage of 30 V. It operates in enhancement mode with low on-resistance of 0.0028 Ω. This robust transistor supports high power dissipation up to 350 W.

4000 mJ

SINGLE WITH BUILT-IN DIODE

30 V

120 A

120 A

.0028 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

350 W

480 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW18NK80Z by STMicroelectronics

STW18NK80Z

STMicroelectronics

STW18NK80Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 19 A, breakdown voltage of 800 V, and power dissipation up to 350 W. Ideal for high-voltage circuits, it ensures reliable performance in demanding environments.

700 mJ

SINGLE WITH BUILT-IN DIODE

800 V

19 A

19 A

.38 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

350 W

76 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW29NK50Z by STMicroelectronics

STW29NK50Z

STMicroelectronics

STW29NK50Z by STMicroelectronics is a power FET with N-channel configuration and 500V DS breakdown voltage. It is used for switching applications, offering a max pulsed drain current of 124A and an avalanche energy rating of 550mJ.

550 mJ

SINGLE WITH BUILT-IN DIODE

500 V

31 A

31 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

350 W

124 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW28NK60Z by STMicroelectronics

STW28NK60Z

STMicroelectronics

STW28NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 27A max drain current, and 350W power dissipation. Ideal for high-efficiency power management in various electronic devices.

500 mJ

SINGLE WITH BUILT-IN DIODE

600 V

27 A

27 A

.185 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

350 W

108 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW56N60M2 by STMicroelectronics

STW56N60M2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;

SINGLE

52 A

52 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

350 W

FET General Purpose Power

NO

NOT SPECIFIED