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2.4 W Power Field Effect Transistors (FET) 14

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
UPA2600T1R-E2-AX by Renesas Electronics

UPA2600T1R-E2-AX

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Drain-Source On Resistance: .0191 ohm;

SINGLE

20 V

7 A

7 A

.0191 ohm

METAL-OXIDE SEMICONDUCTOR

e4

1

150 Cel

260

N-CHANNEL

2.4 W

FET General Purpose Powers

YES

NICKEL PALLADIUM GOLD

IRF7341QTRPBF by International Rectifier

IRF7341QTRPBF

International Rectifier

IRF7341QTRPBF by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, suitable for SWITCHING applications. It features 2 ELEMENTS with BUILT-IN DIODE, capable of handling up to 42A IDM and has a low 0.05 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

140 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

55 V

5.1 A

5.1 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.4 W

42 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

CSD25302Q2 by Texas Instruments

CSD25302Q2

Texas Instruments

CSD25302Q2 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 5A Drain Current, and 0.092 ohm On Resistance. With a max power dissipation of 2.4W and operating temperature of 150°C, it's ideal for high-performance electronic devices.

AVALANCHE RATED

SOURCE

SINGLE WITH BUILT-IN DIODE

20 V

5 A

5 A

.092 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.4 W

20 A

Not Qualified

Other Transistors

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

NTP75N06 by Onsemi

NTP75N06

Onsemi

NTP75N06 by Onsemi is a Power FET with N-CHANNEL polarity, ideal for SWITCHING applications. It features a 60V DS Breakdown Voltage, 225A Pulsed Drain Current, and 0.0095 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max temperature of 175 °C.

844 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

75 A

75 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

2.4 W

225 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB45N06LT4 by Onsemi

NTB45N06LT4

Onsemi

NTB45N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Drain Current, 0.028 ohm On Resistance, and 150A Pulsed Drain Current. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 175 °C.

LOGIC LEVEL COMPATIBLE

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

45 A

45 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

2.4 W

150 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTP45N06L by Onsemi

NTP45N06L

Onsemi

NTP45N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 150A IDM, and 0.028 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.4W at 175 °C.

LOGIC LEVEL COMPATIBLE

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

45 A

45 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

2.4 W

150 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTP75N06G by Onsemi

NTP75N06G

Onsemi

NTP75N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and EAS of 844 mJ.

844 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

75 A

75 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

2.4 W

225 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB45N06LG by Onsemi

NTB45N06LG

Onsemi

NTB45N06LG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 45A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 150A Pulsed Drain Current, and 0.028 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.

LOGIC LEVEL COMPATIBLE

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

45 A

45 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.4 W

150 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTB45N06LT4G by Onsemi

NTB45N06LT4G

Onsemi

NTB45N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 45A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.028 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 2.4W and can handle up to 150A pulsed drain current.

LOGIC LEVEL COMPATIBLE

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

45 A

45 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.4 W

150 A

Not Qualified

FET General Purpose Powers

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTB75N06G by Onsemi

NTB75N06G

Onsemi

NTB75N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.

844 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

75 A

75 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.4 W

225 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTB75N06T4G by Onsemi

NTB75N06T4G

Onsemi

NTB75N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 2.4W Pdiss and 175 °C Tmax.

844 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

75 A

75 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.4 W

225 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTLJS14D0P03P8ZTAG by Onsemi

NTLJS14D0P03P8ZTAG

Onsemi

NTLJS14D0P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 165A IDM, 0.0135 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.4W and peak reflow temperature of 260C, it offers reliable performance in various electronic devices.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

11 A

.0135 ohm

METAL-OXIDE SEMICONDUCTOR

690 pF

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.4 W

165 A

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

254 ns

52 ns

NVTFS012P03P8ZTAG by Onsemi

NVTFS012P03P8ZTAG

Onsemi

NVTFS012P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 47A IDM, and 0.02 ohm RDS(ON). Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors. Operating range from -55 to 175 °C with METAL-OXIDE SEMICONDUCTOR technology.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

7 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

506 pF

S-PDSO-F8

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

2.4 W

47 A

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NVTFWS012P03P8ZTAG by Onsemi

NVTFWS012P03P8ZTAG

Onsemi

NVTFWS012P03P8ZTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 47A IDM, 0.02 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SQUARE package and -55 to 175 °C temperature range, it's suitable for various power management needs.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

7 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

506 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.4 W

47 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON