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188 W Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVB6410ANT4G by Onsemi

NVB6410ANT4G

Onsemi

NVB6410ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for high-power applications in automotive electronics due to its AEC-Q101 compliance and 188W Pdiss.

500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

76 A

76 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

188 W

305 A

AEC-Q101

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SILICON

IPI040N06N3GXKSA1 by Infineon Technologies

IPI040N06N3GXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;

AVALANCHE RATED

165 mJ

SINGLE WITH BUILT-IN DIODE

60 V

90 A

90 A

.004 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

188 W

360 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

CSD19533KCS by Texas Instruments

CSD19533KCS

Texas Instruments

CSD19533KCS by Texas Instruments is an N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 207A and EAS of 106mJ, making it suitable for high-power operations. With a low 0.0122 ohm RDS(on), this FET offers efficient performance in ENHANCEMENT MODE operation.

AVALANCHE RATED

106 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

100 A

100 A

.0122 ohm

METAL-OXIDE SEMICONDUCTOR

12.5 pF

TO-220

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

188 W

207 A

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB6410ANG by Onsemi

NTB6410ANG

Onsemi

The Onsemi NTB6410ANG is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for high-power applications requiring up to 188W dissipation. Suitable for surface mount designs in power electronics due to its small outline package and built-in diode.

500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

76 A

76 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

188 W

305 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SILICON

NTP6410ANG by Onsemi

NTP6410ANG

Onsemi

NTP6410ANG by Onsemi is a single N-channel power FET with a built-in diode, featuring a min DS breakdown voltage of 100V and max pulsed drain current of 305A. Ideal for applications requiring high power dissipation up to 188W, such as in flange mount configurations for enhanced performance in enhancement mode operation.

500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

76 A

76 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

188 W

305 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

SPI80N03S2L-04 by Infineon Technologies

SPI80N03S2L-04

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: MATTE TIN;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

380 mJ

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

188 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPI032N06N3G by Infineon Technologies

IPI032N06N3G

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Maximum Drain Current (Abs) (ID): 120 A; Package Style (Meter): IN-LINE;

235 mJ

SINGLE WITH BUILT-IN DIODE

60 V

120 A

120 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

188 W

480 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB6448ANG by Onsemi

NTB6448ANG

Onsemi

NTB6448ANG by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in enhancement mode operation at up to 175 °C temperature.

500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

76 A

76 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

188 W

305 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SILICON

NTB6448ANT4G by Onsemi

NTB6448ANT4G

Onsemi

NTB6448ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 305A IDM. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include built-in diode, 0.013 ohm RDS(on), and 175 °C max operating temp.

500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

76 A

76 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

188 W

305 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SILICON

NTP6448ANG by Onsemi

NTP6448ANG

Onsemi

NTP6448ANG by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for power applications requiring high drain current handling. Suitable for use in enhancement mode operation at up to 175 °C temperature.

500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

76 A

76 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

188 W

305 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

IPB085N06LG by Infineon Technologies

IPB085N06LG

Infineon Technologies

Infineon Technologies' IPB085N06LG is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 60V, max pulsed drain current of 320A, and max power dissipation of 188W. This transistor is commonly used for switching applications in various industries.

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

370 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

80 A

80 A

.0082 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

188 W

320 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STL225N6F7AG by STMicroelectronics

STL225N6F7AG

STMicroelectronics

STL225N6F7AG by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 480A IDM, and 0.0014 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 188W power dissipation, -55 to 175 °C operating temp range, and DUAL terminal position.

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

120 A

.0014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

188 W

480 A

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STL285N4F7AG by STMicroelectronics

STL285N4F7AG

STMicroelectronics

STL285N4F7AG by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.

BULK: 3000

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

.0011 ohm

METAL-OXIDE SEMICONDUCTOR

35 pF

R-PDSO-F8

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

188 W

480 A

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON