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180 W Power Field Effect Transistors (FET) 11

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STW38NB20 by STMicroelectronics

STW38NB20

STMicroelectronics

STW38NB20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 152A IDM, and 0.065 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 180W Pdiss and 150 °C Max Temp.

550 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

200 V

38 A

38 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

152 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW80NE06-10 by STMicroelectronics

STW80NE06-10

STMicroelectronics

STW80NE06-10 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage, 320A IDM, and 0.01 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it has an EAS of 350mJ and can handle up to 180W power dissipation.

350 mJ

SINGLE WITH BUILT-IN DIODE

60 V

80 A

80 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

320 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW60NE10 by STMicroelectronics

STW60NE10

STMicroelectronics

STW60NE10 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, breakdown voltage of 100 V, and power dissipation up to 180 W. Ideal for high-performance power management in various electronic devices.

500 mJ

SINGLE WITH BUILT-IN DIODE

100 V

60 A

60 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

240 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP70NS04ZC by STMicroelectronics

STP70NS04ZC

STMicroelectronics

STP70NS04ZC by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 33 V. It offers low on-resistance at 0.011 Ω and operates up to 175 °C. This versatile transistor is suitable for high-power circuits.

720 mJ

SINGLE WITH BUILT-IN DIODE AND RESISTOR

33 V

80 A

80 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

180 W

320 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

FQB34N20TM_AM002 by Fairchild Semiconductor

FQB34N20TM_AM002

Fairchild Semiconductor

Fairchild Semiconductor's FQB34N20TM_AM002 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 124A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.075 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE.

640 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

31 A

31 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

180 W

124 A

Not Qualified

FET General Purpose Powers

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

MTW32N20EG by Onsemi

MTW32N20EG

Onsemi

The Onsemi MTW32N20EG is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 128A IDM, 810mJ EAS, and 0.075 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 180W and can withstand temperatures from -55 to 150 °C.

AVALANCHE RATED

810 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

32 A

32 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AE

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

180 W

128 A

Not Qualified

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

FQH44N10-F133 by Onsemi

FQH44N10-F133

Onsemi

FQH44N10-F133 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 192A IDM, and 0.039 ohm RDS(on). Ideal for SWITCHING applications due to its 180W Pdiss, EAS of 530mJ, and -55 to +175°C operating temp. Suitable for various power control circuits.

530 mJ

SINGLE WITH BUILT-IN DIODE

100 V

48 A

48 A

.039 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

192 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

HUF76639S3ST-F085 by Onsemi

HUF76639S3ST-F085

Onsemi

HUF76639S3ST-F085 by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 51A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 175°C. Package: PLASTIC/EPOXY, GULL WING terminals, and SMALL OUTLINE style.

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

51 A

50 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

180 W

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

DMTH4004SK3-13 by Diodes Incorporated

DMTH4004SK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 40 V;

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

100 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

102 pF

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

180 W

160 A

MIL-STD-202

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IXTY14N60X2 by Littelfuse

IXTY14N60X2

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Minimum DS Breakdown Voltage: 600 V; Minimum Operating Temperature: -55 Cel;

AVALANCHE RATED

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

14 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

180 W

18 A

YES

MATTE TIN

GULL WING

SINGLE

10

SWITCHING

SILICON

IXTP14N60X2 by Littelfuse

IXTP14N60X2

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;

AVALANCHE RATED

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

14 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

18 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON