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178 W Power Field Effect Transistors (FET) 11

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTB35N15T4 by Onsemi

NTB35N15T4

Onsemi

NTB35N15T4 by Onsemi is a N-CHANNEL FET with 150V DS Breakdown Voltage, 111A IDM, and 0.05 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 178W. The transistor features a built-in diode and can withstand temperatures up to 150 °C.

700 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

37 A

37 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

178 W

111 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTP52N10 by Onsemi

NTP52N10

Onsemi

NTP52N10 by Onsemi is a Power FET with 100V DS Breakdown Voltage, 156A IDM, and 0.03 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. The package style is FLANGE MOUNT with SILICON element material and 150 °C max operating temp.

800 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

52 A

60 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

178 W

156 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB52N10T4G by Onsemi

NTB52N10T4G

Onsemi

NTB52N10T4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 52A ID, and 0.03 ohm RDS(ON). Ideal for SWITCHING applications, it features a built-in DIODE and can handle up to 156A IDM. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 178W.

800 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

52 A

52 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

178 W

156 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTB52N10G by Onsemi

NTB52N10G

Onsemi

NTB52N10G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 52A, 0.03 ohm On Resistance, and 178W Power Dissipation. The transistor operates in ENHANCEMENT MODE and has a peak reflow temperature of 260 °C.

800 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

52 A

52 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

178 W

156 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTB35N15G by Onsemi

NTB35N15G

Onsemi

NTB35N15G by Onsemi is a N-CHANNEL FET with 150V DS Breakdown Voltage and 37A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 111A Pulsed Drain Current, and 0.05 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 178W in a small outline package.

700 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

37 A

37 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

178 W

111 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTP30N20G by Onsemi

NTP30N20G

Onsemi

NTP30N20G by Onsemi is a Power FET with 200V DS Breakdown Voltage, 90A IDM, and 0.081 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.

AVALANCHE RATED

450 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

30 A

30 A

.081 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

178 W

90 A

Not Qualified

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

NTP35N15G by Onsemi

NTP35N15G

Onsemi

NTP35N15G by Onsemi is a Power FET with 150V DS Breakdown Voltage, 37A Drain Current, and 0.05 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and 111A Pulsed Drain Current. The transistor has a max power dissipation of 178W and operates at temperatures up to 150 °C.

AVALANCHE RATED

700 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

37 A

37 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

178 W

111 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTC080N120SC1 by Onsemi

NTC080N120SC1

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 178 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

171 mJ

SINGLE WITH BUILT-IN DIODE

1200 V

31 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

6.5 pF

R-XUUC-N3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

178 W

132 A

YES

NO LEAD

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

DMG10N60SCT by Diodes Incorporated

DMG10N60SCT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 178 W; JEDEC-95 Code: TO-220AB; Operating Mode: ENHANCEMENT MODE;

ESD PROTECTED

550 mJ

SINGLE WITH BUILT-IN DIODE

600 V

12 A

12 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

178 W

15 A

YES

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPW60R055CFD7XKSA1 by Infineon Technologies

IPW60R055CFD7XKSA1

Infineon Technologies

Infineon's IPW60R055CFD7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 153A max pulsed drain current and 0.055 ohm max on-resistance. With a power dissipation of 178W, it operates in temperatures ranging from -55 to 150°C.

180 mJ

SINGLE WITH BUILT-IN DIODE

600 V

38 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

178 W

153 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTHL080N120SC1 by Onsemi

NTHL080N120SC1

Onsemi

NTHL080N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, 132A IDM, and 0.11 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 178W. The transistor features an N-CHANNEL configuration in a RECTANGULAR package with METAL-OXIDE SEMICONDUCTOR technology.

171 mJ

SINGLE WITH BUILT-IN DIODE

1200 V

31 A

31 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

6.5 pF

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

178 W

132 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE