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115 W Power Field Effect Transistors (FET) 19

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP80N04NLG-S18-AY by Renesas Electronics

NP80N04NLG-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; JEDEC-95 Code: TO-262AA; Additional Features: LOGIC LEVEL COMPATIBLE;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

80 A

80 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

115 W

300 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP80N04PLG-E1B-AY by Renesas Electronics

NP80N04PLG-E1B-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Peak Reflow Temperature (C): NOT SPECIFIED; Additional Features: LOGIC LEVEL COMPATIBLE;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

80 A

80 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

115 W

300 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP80N04PUG-E1B-AY by Renesas Electronics

NP80N04PUG-E1B-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 80 A;

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

80 A

80 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

115 W

300 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP80N055MDG-S18-AY by Renesas Electronics

NP80N055MDG-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 55 V;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.0069 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

115 W

200 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP80N06PLG-E1B-AY by Renesas Electronics

NP80N06PLG-E1B-AY

Renesas Electronics

NP80N06PLG-E1B-AY by Renesas Electronics is a N-channel FET with 60V DS breakdown voltage and 180A IDM. Ideal for switching applications, it features 0.0083 ohm max RDS(on) and operates in enhancement mode. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation up to 175°C.

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

80 A

80 A

.0083 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

115 W

180 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTP5862NG by Onsemi

NTP5862NG

Onsemi

NTP5862NG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 335A IDM, and 0.0057 ohm RDS(ON). Ideal for power applications requiring high drain current handling capacity. Suitable for use in circuits where low on-resistance and high power dissipation are crucial.

205 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

98 A

50 A

.0057 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

115 W

335 A

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

IPP057N06N3GXKSA1 by Infineon Technologies

IPP057N06N3GXKSA1

Infineon Technologies

IPP057N06N3GXKSA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 320A IDM, and 0.0057 ohm RDS. Ideal for SWITCHING applications due to its 115W Pdiss, EAS of 77mJ, and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON element material and TIN terminal finish.

LOGIC LEVEL COMPATIBLE

77 mJ

SINGLE WITH BUILT-IN DIODE

60 V

80 A

80 A

.0057 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

115 W

320 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVD5862NT4G by Onsemi

NVD5862NT4G

Onsemi

NVD5862NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 367A IDM, and 0.0057 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in enhancement mode operation at up to 175 °C temperature.

205 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

98 A

18 A

.0057 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

115 W

367 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

PHP83N03LT,127 by NXP Semiconductors

PHP83N03LT,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

75 A

75 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

115 W

240 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB10NK60Z-1 by STMicroelectronics

STB10NK60Z-1

STMicroelectronics

STB10NK60Z-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 115W power dissipation. Its compact design ensures efficient performance in various electronic circuits.

300 mJ

SINGLE WITH BUILT-IN DIODE

600 V

10 A

10 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

115 W

36 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB9NK70Z-1 by STMicroelectronics

STB9NK70Z-1

STMicroelectronics

STB9NK70Z-1 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 30A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

230 mJ

SINGLE WITH BUILT-IN DIODE

700 V

7.5 A

7.5 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

115 W

30 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB9NK70ZT4 by STMicroelectronics

STB9NK70ZT4

STMicroelectronics

STB9NK70ZT4 by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 700V breakdown voltage, 30A pulsed drain current, and operates at up to 150 °C. Ideal for compact power management solutions in various electronics.

230 mJ

SINGLE WITH BUILT-IN DIODE

700 V

7.5 A

7.5 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

30 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STP9NK70Z by STMicroelectronics

STP9NK70Z

STMicroelectronics

STP9NK70Z by STMicroelectronics is a N-CHANNEL FET with 700V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 30A IDM, 230mJ EAS, and 115W Power Dissipation. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.

230 mJ

SINGLE WITH BUILT-IN DIODE

700 V

7.5 A

7.5 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

115 W

30 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB35NF10T4 by STMicroelectronics

STB35NF10T4

STMicroelectronics

STB35NF10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.035 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 115W Pdiss and -55 to 175°C temp range.

300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

40 A

40 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

160 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD03N03LBG by Infineon Technologies

IPD03N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

90 A

90 A

.0049 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

115 W

360 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD04N03LAG by Infineon Technologies

IPD04N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Qualification: Not Qualified; Moisture Sensitivity Level (MSL): 3;

LOGIC LEVEL COMPATIBLE

600 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0057 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

115 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPS04N03LAG by Infineon Technologies

IPS04N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;

LOGIC LEVEL COMPATIBLE

600 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0059 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

115 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP120NH03L by STMicroelectronics

STP120NH03L

STMicroelectronics

STP120NH03L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.

LOW THRESHOLD

700 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

60 A

60 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

245

N-CHANNEL

115 W

240 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

NTBGS3D5N06C by Onsemi

NTBGS3D5N06C

Onsemi

NTBGS3D5N06C by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 491A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0037 ohm RDS(on), and 176mJ EAS rating. Operating in ENHANCEMENT MODE, this transistor has a max temp of 175°C and DRAIN connection.

176 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

127 A

.0037 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

TO-263CB

R-PSSO-G6

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

491 A

YES

GULL WING

SINGLE

SWITCHING

SILICON