Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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TPC8207(TE12L)
Toshiba
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (Abs) (ID): 6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
6 A
METAL-OXIDE SEMICONDUCTOR
ENHANCEMENT MODE
150 Cel
N-CHANNEL
1.5 W
FET General Purpose Power
YES
ECH8659-M-TL-H
Onsemi
ECH8659-M-TL-H by Onsemi is an N-CHANNEL Power FET with 7A max drain current and 1.5W max power dissipation. It operates in enhancement mode with a max temp of 150 °C, making it suitable for high-power applications like motor control and power supplies.
7 A
e6
1
Tin/Bismuth (Sn/Bi)
DMN2028UFDH-7
Diodes Incorporated
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 6.8 A;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
6.8 A
.036 ohm
R-PDSO-N8
e3
2
8
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
40 A
AEC-Q101
MATTE TIN
NO LEAD
DUAL
30
SWITCHING
SILICON
ECH8672-TL-H
ECH8672-TL-H by Onsemi is a P-CHANNEL FET with 3.5A max drain current and 1.5W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, such as power management systems in automotive or industrial settings.
3.5 A
P-CHANNEL
Other Transistors
TIN BISMUTH
MCH6445-TL-W
MCH6445-TL-W by Onsemi is a N-CHANNEL FET with 4A max drain current and 1.5W power dissipation. Ideal for enhancement mode operation, it features metal-oxide semiconductor technology and can withstand up to 150 °C. Suitable for various power applications requiring high efficiency and reliability in surface mount configurations.
SINGLE
4 A
DMS2220LFW-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e4; Additional Features: HIGH RELIABILITY;
HIGH RELIABILITY
DRAIN
SINGLE WITH BUILT-IN DIODE
2.9 A
.095 ohm
e4
10 A
Not Qualified
NICKEL PALLADIUM GOLD
CSD75211W1723
Texas Instruments
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Terminal Form: BALL; Terminal Finish: TIN SILVER COPPER;
4.5 A
.07 ohm
R-PBGA-B12
e1
12
GRID ARRAY
TIN SILVER COPPER
BALL
BOTTOM
NTD3055-094-1
NTD3055-094-1 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.094 ohm RDS(on). Ideal for switching applications, it features an N-channel configuration in a plastic/epoxy package with built-in diode. Operating in enhancement mode, this MOSFET has a max power dissipation of 1.5W at 175 °C.
61 mJ
60 V
12 A
.094 ohm
R-PSIP-T3
e0
3
175 Cel
IN-LINE
235
45 A
NO
TIN LEAD
THROUGH-HOLE
NTD3055-094
NTD3055-094 by Onsemi is a Power FET with N-CHANNEL configuration and built-in diode, ideal for switching applications. It features a 60V DS breakdown voltage, 45A pulsed drain current, and 0.094 ohm max on-resistance. With a small outline package style and operating temp of 175 °C, it's suitable for various electronic designs.
R-PSSO-G2
GULL WING
NTD32N06L
NTD32N06L by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.028 ohm On Resistance. It is an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. The package is PLASTIC/EPOXY with GULL WING terminals, suitable for surface mount assembly.
LOGIC LEVEL COMPATIBLE
313 mJ
32 A
.028 ohm
90 A
NTD18N06LT4
NTD18N06LT4 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 54A IDM, and 0.065 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
72 mJ
18 A
.065 ohm
54 A
NTD18N06L
NTD18N06L by Onsemi is a Power FET with 60V DS Breakdown Voltage, 54A IDM, and 0.065 ohm RDS. Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 1.5W and can handle up to 175 °C temperature.
NTD18N06
NTD18N06 by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a 60V min DS breakdown voltage, 54A max pulsed drain current, and 0.06 ohm max drain-source resistance. This MOSFET operates in enhancement mode with a max temperature of 175 °C, making it suitable for high-power applications.
.06 ohm
NTD3055-150T4
NTD3055-150T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 27A Max Pulsed Drain Current, and 0.15 ohm Max Drain-Source Resistance. With a small outline package style and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 175 °C.
30 mJ
9 A
.15 ohm
27 A
NTD3055L170
NTD3055L170 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features include built-in diode, small outline package style, and 175 °C max operating temp.
.17 ohm
NTD15N06LT4
NTD15N06LT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 45A IDM, and 0.1 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 1.5W.
15 A
.1 ohm
DMS2120LFWB-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; No. of Elements: 1; JESD-609 Code: e4;
NTD3055-094G
NTD3055-094G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 45A Max Pulsed Drain Current, and 0.094 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE and has a max operating temperature of 175 °C.
TIN
NTD3055-094-1G
NTD3055-094-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.094 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. The package is RECTANGULAR with THROUGH-HOLE terminals, operating in ENHANCEMENT MODE up to 175 °C.
NTD18N06LG
NTD18N06LG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 54A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration with a built-in diode. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 1.5W and can withstand temperatures up to 175 °C.
NTD18N06L-1G
NTD18N06L-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 54A IDM, and 0.065 ohm RDS. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 175 °C Max Temp. With a built-in diode, this N-CHANNEL transistor has a rectangular package shape and through-hole terminals.
NTD3055L170G
NTD3055L170G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 1.5W and can withstand temperatures up to 175 °C.
NTD3055L170-1G
NTD3055L170-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a RECTANGULAR package with 3 terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1.5W at 175 °C.
NTD3055L170T4G
NTD3055L170T4G by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 60V, max pulsed drain current of 27A, and max operating temperature of 175°C. This MOSFET has a package style of small outline and terminal finish in matte tin, suitable for high-power circuit designs.
NTD18N06G
NTD18N06G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A Drain Current, and 0.06 ohm On Resistance. Ideal for SWITCHING applications, this N-CHANNEL transistor operates in ENHANCEMENT MODE with a max power dissipation of 1.5W in a small outline package style.
NTD18N06T4G
NTD18N06T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A Drain Current, and 0.06 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and a built-in DIODE in a PLASTIC/EPOXY package.
NTD18N06-1G
NTD18N06-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A ID, and 0.06 ohm RDS. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 54A IDM. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and operates at up to 175 °C.
DMG4710SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain-Source On Resistance: .0125 ohm; Maximum Drain Current (Abs) (ID): 12.7 A;
30 V
12.7 A
8.8 A
.0125 ohm
R-PDSO-G8
FET General Purpose Powers
NTLJF3117PTAG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 20 A;
3.3 A
2.3 A
.135 ohm
S-PDSO-N6
6
-55 Cel
20 A
MCH6436-TL-W
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Terminal Finish: TIN BISMUTH; Additional Features: ESD PROTECTED;
ESD PROTECTED
.034 ohm
R-XDSO-F6
UNSPECIFIED
24 A
FLAT
MCH6336-TL-W
MCH6336-TL-W by Onsemi is a P-CHANNEL FET for switching applications. It features a 12V DS breakdown voltage, 20A max pulsed drain current, and 0.043 ohm max drain-source resistance. With a small outline package style and operating temp up to 150 °C, it's ideal for power management in compact electronic devices.
12 V
5 A
.043 ohm
R-XDSO-N6
MCH6431-TL-W
MCH6431-TL-W by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 20A IDM, and 0.055 ohm RDS(on). Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max temp of 150 °C.
.055 ohm
ECH8655R-R-TL-H
ECH8655R-R-TL-H by Onsemi is an N-CHANNEL Power FET with 9A max drain current and 1.5W power dissipation. Ideal for applications requiring high power efficiency in a compact design, such as automotive electronics or industrial automation systems. Operating up to 150 °C, it features surface mount technology and tin/bismuth terminal finish for reliable performance.
DMC10H220LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Package Body Material: PLASTIC/EPOXY; Maximum Pulsed Drain Current (IDM): 9 A;
.5 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
100 V
1.7 A
.22 ohm
12 pF
N-CHANNEL AND P-CHANNEL
MIL-STD-202
DMC10H172SSD-13
DMC10H172SSD-13 by Diodes Inc. is a Power FET with N/P-channel, 2 elements, built-in diode for switching applications. Features include 100V DS breakdown voltage, 16A pulsed drain current, and 0.16 ohm max on-resistance. Suitable for small outline packages in MOSFET technology with -55 to 150°C operating range.
20 mJ
2 A
.16 ohm
20 pF
16 A
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