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.2 W Power Field Effect Transistors (FET) 22

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BF1005S-E6327 by Infineon Technologies

BF1005S-E6327

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .025 A; Operating Mode: DUAL GATE, ENHANCEMENT MODE;

SINGLE

.025 A

.025 A

METAL-OXIDE SEMICONDUCTOR

1

1

DUAL GATE, ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

.2 W

FET General Purpose Power

YES

BF1005SR-E6327 by Infineon Technologies

BF1005SR-E6327

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Drain Current (ID): .025 A;

SINGLE

.025 A

.025 A

METAL-OXIDE SEMICONDUCTOR

1

1

DUAL GATE, ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

.2 W

FET General Purpose Power

YES

BF5020-E6327 by Infineon Technologies

BF5020-E6327

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .025 A;

SINGLE

.025 A

.025 A

METAL-OXIDE SEMICONDUCTOR

1

1

DEPLETION MODE

150 Cel

260

N-CHANNEL

.2 W

FET General Purpose Power

YES

BF5020R-E6327 by Infineon Technologies

BF5020R-E6327

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .025 A; Operating Mode: DEPLETION MODE;

SINGLE

.025 A

.025 A

METAL-OXIDE SEMICONDUCTOR

1

1

DEPLETION MODE

150 Cel

260

N-CHANNEL

.2 W

FET General Purpose Power

YES

BF5030-E6327 by Infineon Technologies

BF5030-E6327

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;

SINGLE

.025 A

.025 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

.2 W

FET General Purpose Power

YES

BF5030R-E6327 by Infineon Technologies

BF5030R-E6327

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

SINGLE

.025 A

.025 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

.2 W

FET General Purpose Power

YES

BF904A,215 by NXP Semiconductors

BF904A,215

NXP Semiconductors

BF904A,215 by NXP Semiconductors is an N-channel FET designed for dual gate enhancement mode applications. It supports a max drain current of 30 mA and power dissipation of 200 mW, operating up to 150 °C. Ideal for RF amplification in compact devices.

SINGLE

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

e3

1

DUAL GATE, ENHANCEMENT MODE

150 Cel

N-CHANNEL

.2 W

FET General Purpose Power

YES

Matte Tin (Sn)

BF904AR,215 by NXP Semiconductors

BF904AR,215

NXP Semiconductors

BF904AR,215 by NXP Semiconductors is a N-CHANNEL Power FET with SINGLE configuration. It operates in DUAL GATE, ENHANCEMENT MODE with max ID of 0.03A and Pd of 0.2W. Ideal for applications requiring METAL-OXIDE SEMICONDUCTOR technology, it can handle up to 150°C operating temperature.

SINGLE

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

e3

1

DUAL GATE, ENHANCEMENT MODE

150 Cel

N-CHANNEL

.2 W

FET General Purpose Power

YES

Matte Tin (Sn)

UPA672T-T1-A by Renesas Electronics

UPA672T-T1-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .1 A; Maximum Drain Current (ID): .1 A; Operating Mode: ENHANCEMENT MODE;

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

e6

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.2 W

FET General Purpose Power

YES

TIN BISMUTH

BF998R,235 by NXP Semiconductors

BF998R,235

NXP Semiconductors

NXP Semiconductors BF998R,235 is a N-CHANNEL FET with 0.03A ID and 0.2W power dissipation. Ideal for dual gate applications in METAL-OXIDE SEMICONDUCTOR technology, operating up to 150°C. Suitable for surface mount configurations requiring high drain current capabilities.

SINGLE

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

e3

1

DUAL GATE, DEPLETION MODE

150 Cel

260

N-CHANNEL

.2 W

FET General Purpose Power

YES

TIN

30

BF1201,215 by NXP Semiconductors

BF1201,215

NXP Semiconductors

BF1201,215 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 30 mA and power dissipation of 200 mW, operating up to 150 °C. Ideal for surface mount applications in compact electronic devices.

SINGLE

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

N-CHANNEL

.2 W

FET General Purpose Power

YES

Tin (Sn)

BF1201R,215 by NXP Semiconductors

BF1201R,215

NXP Semiconductors

BF1201R,215 by NXP Semiconductors is an N-channel MOSFET ideal for power applications. It features a max drain current of 30 mA, power dissipation of 200 mW, and operates up to 150 °C. This surface-mount FET is perfect for compact electronic designs.

SINGLE

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

N-CHANNEL

.2 W

FET General Purpose Power

YES

Tin (Sn)

BF1201WR,135 by NXP Semiconductors

BF1201WR,135

NXP Semiconductors

NXP Semiconductors BF1201WR,135 is a N-CHANNEL FET with 0.03A max drain current and 0.2W power dissipation. Ideal for applications requiring high temperature resistance up to 150°C, such as power management in compact electronic devices.

SINGLE

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

N-CHANNEL

.2 W

FET General Purpose Power

YES

Tin (Sn)

BF1202,215 by NXP Semiconductors

BF1202,215

NXP Semiconductors

BF1202,215 by NXP Semiconductors is an N-channel FET designed for efficient power management. It supports a max drain current of 30 mA and power dissipation of 200 mW, operating up to 150 °C. Ideal for compact surface mount applications in electronics.

SINGLE

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

N-CHANNEL

.2 W

FET General Purpose Powers

YES

Tin (Sn)

BF1202R,215 by NXP Semiconductors

BF1202R,215

NXP Semiconductors

NXP Semiconductors BF1202R,215 is a N-CHANNEL FET with 0.03A max drain current and 0.2W power dissipation. Ideal for applications requiring high temperature resistance up to 150°C, such as power management in electronic devices.

SINGLE

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

N-CHANNEL

.2 W

FET General Purpose Powers

YES

Tin (Sn)

BF1204,135 by NXP Semiconductors

BF1204,135

NXP Semiconductors

BF1204,135 by NXP Semiconductors is a N-CHANNEL Power FET with dual gate, enhancement mode. It has max drain current of 0.03A and power dissipation of 0.2W. Ideal for applications requiring high temperature tolerance up to 150°C in surface mount configurations.

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

e3

DUAL GATE, ENHANCEMENT MODE

150 Cel

N-CHANNEL

.2 W

FET General Purpose Power

YES

Tin (Sn)

BF1205,135 by NXP Semiconductors

BF1205,135

NXP Semiconductors

BF1205,135 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max drain current of 30 mA, power dissipation of 200 mW, and operates at up to 150 °C. Ideal for dual-gate applications in compact electronic devices.

SINGLE

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

e3

1

DUAL GATE, ENHANCEMENT MODE

150 Cel

N-CHANNEL

.2 W

FET General Purpose Power

YES

Matte Tin (Sn)

BF908R,215 by NXP Semiconductors

BF908R,215

NXP Semiconductors

BF908R,215 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.2 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.

SINGLE

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

260

N-CHANNEL

.2 W

FET General Purpose Power

YES

TIN

30

BF908R,235 by NXP Semiconductors

BF908R,235

NXP Semiconductors

BF908R,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.2 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.

SINGLE

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

260

N-CHANNEL

.2 W

FET General Purpose Power

YES

TIN

30

HN4K03JU(TE85L,F) by Toshiba

HN4K03JU(TE85L,F)

Toshiba

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .1 A; Maximum Drain Current (ID): .1 A; Maximum Operating Temperature: 150 Cel;

.1 A

.1 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.2 W

FET General Purpose Powers

YES

2SK1828(TE85L,F) by Toshiba

2SK1828(TE85L,F)

Toshiba

Toshiba's 2SK1828(TE85L,F) is an N-CHANNEL FET with a max drain current of 0.05A and power dissipation of 0.2W. Ideal for applications requiring low power consumption, such as portable electronics or battery-operated devices due to its surface mount configuration and enhancement mode operation.

SINGLE

.05 A

.05 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

.2 W

FET General Purpose Powers

YES

BG3230E6327 by Infineon Technologies

BG3230E6327

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .025 A;

SINGLE

.025 A

.025 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

.2 W

FET General Purpose Power

YES