Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSM120D12P2C005
ROHM
ROHM BSM120D12P2C005 is a N-CHANNEL FET with 1200V DS breakdown voltage, 240A IDM, and 780W max power dissipation. Ideal for high-power SWITCHING applications due to its SERIES CONNECTED configuration and SILICON CARBIDE technology.
ISOLATED
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
1200 V
120 A
METAL-OXIDE SEMICONDUCTOR
R-XUFM-X8
2
8
ENHANCEMENT MODE
150 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
780 W
240 A
FET General Purpose Powers
NO
UPPER
SWITCHING
SILICON CARBIDE
CAS300M12BM2
Wolfspeed
CAS300M12BM2 by Wolfspeed is a N-CHANNEL FET with 1200V DS breakdown voltage. It features 2 elements with built-in diode for switching applications. Operating in enhancement mode, it has a max pulsed drain current of 1500A and 0.0567 ohm drain-source on resistance.
.0567 ohm
113 pF
R-XUFM-X7
7
-40 Cel
1500 A
IRF7901D1
International Rectifier
IRF7901D1 by International Rectifier is an N-CHANNEL FET for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 24A, and max operating temperature of 150°C. With a package style of small outline and surface mount capability, it offers efficient power management in various electronic devices.
30 V
6.2 A
.038 ohm
MS-012AA
R-PDSO-G8
e0
1
PLASTIC/EPOXY
SMALL OUTLINE
2 W
24 A
Not Qualified
FET General Purpose Power
YES
TIN LEAD
GULL WING
DUAL
SILICON
IRF7901D1TR
IRF7901D1TR by International Rectifier is an N-CHANNEL FET with 2 SERIES CONNECTED elements and a built-in diode. It operates in ENHANCEMENT MODE for SWITCHING applications, with a Max Pulsed Drain Current of 24A. This PLASTIC/EPOXY package has GULL WING terminals and can handle up to 150°C operating temperature.
IRFI4024H-117P
IRFI4024H-117P by International Rectifier is a N-channel Power FET with 55V DS breakdown voltage, 44A IDM, and 0.06 ohm RDS(on). It is used in amplifier applications due to its series connected configuration with built-in diode. The transistor operates in enhancement mode at up to 150°C temperature.
7.4 mJ
55 V
11 A
.06 ohm
R-PSFM-T5
e3
5
14 W
44 A
MATTE TIN OVER NICKEL
THROUGH-HOLE
SINGLE
AMPLIFIER
NTMFD4901NFT3G
Onsemi
NTMFD4901NFT3G by Onsemi is an N-channel Power FET for switching applications. It features a max pulsed drain current of 100A, avalanche energy rating of 115mJ, and max operating temperature of 150 °C. With a package style of small outline and terminal finish of matte tin, it is ideal for high-power electronic circuits.
115 mJ
DRAIN SOURCE
23.4 A
13.5 A
.0035 ohm
R-PDSO-F8
-55 Cel
260
3.45 W
100 A
MATTE TIN
FLAT
30
CAS300M17BM2
CAS300M17BM2 by Wolfspeed is a N-CHANNEL Power FET with 2 SERIES CONNECTED elements. Operating in ENHANCEMENT MODE, it features SILICON CARBIDE technology and a RECTANGULAR package. Ideal for high-power applications requiring efficiency and reliability.
NTMFD4C85NT3G
NTMFD4C85NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 300A IDM, and 0.0043 ohm RDS(ON). It is used for SWITCHING applications in SERIES CONNECTED configuration. The transistor features METAL-OXIDE SEMICONDUCTOR technology and comes in an 8-terminal SMALL OUTLINE package.
34.5 mJ
15.4 A
.0043 ohm
300 A
TIN
IRF7901D1TRPBF
IRF7901D1TRPBF by International Rectifier is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a Max Pulsed Drain Current of 24A, 0.038 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE for SWITCHING applications. This small outline transistor can handle up to 150°C operating temperature.
MSCSM120AM027CD3AG
Microchip Technology
MSCSM120AM027CD3AG by Microchip Technology is a N-CHANNEL FET with 1200V DS breakdown voltage. It features 2 elements in series connected configuration for switching applications. With max IDM of 1400A and ID of 733A, it operates in enhancement mode with 0.0035 ohm RDS(on) and withstands up to 175°C temperature.
733 A
.23 pF
175 Cel
2970 W
1400 A
MKE38P600LB-TUB
IXYS Corporation
IXYS Corporation's MKE38P600LB-TUB is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring series connected elements with built-in diode, it has a max ID of 50A and 0.045 ohm RDS(on). Operating in enhancement mode, this MOSFET has an EAS of 1950mJ and can withstand temperatures from -55 to 150°C.
HIGH RELIABILITY
1950 mJ
600 V
50 A
.045 ohm
R-PDSO-G9
9
UL RECOGNIZED
SH32N65DM6AG
STMicroelectronics
SH32N65DM6AG by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 120A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for power management in automotive and industrial systems.
778 mJ
650 V
32 A
.097 ohm
.3 pF
3
245
208 W
AEC-Q101
BSM080D12P2C008
ROHM BSM080D12P2C008 is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 160A IDM, and 80A ID. It's used for SWITCHING applications due to its SERIES CONNECTED, CENTER TAP design with SILICON CARBIDE technology.
80 A
160 A
HP8S36TB
ROHM HP8S36TB is a N-CHANNEL FET with 2 elements, built-in diode, and 30V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 48A and 0.0133 ohm RDS(on). With a small outline package style, it operates in enhancement mode at peak reflow temp of 260°C.
5.3 mJ
12 A
.0133 ohm
R-PDSO-F6
6
48 A
10
DMT3006LPB-13
Diodes Incorporated
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: FLAT;
28 mJ
DRAIN
.0111 ohm
72 pF
30 W
MIL-STD-202
CAS120M12BM2
CAS120M12BM2 by Wolfspeed is a N-CHANNEL FET with 1200V DS breakdown voltage. It features 2 elements in series, each with built-in diode, suitable for switching applications. With 0.016 ohm RDS(on) and 480A IDM, it operates in -40 to 150 °C temperature range.
.016 ohm
43.8 pF
480 A
FF6MR12KM1BOSA1
Infineon Technologies
Infineon's FF6MR12KM1BOSA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring series connected, center tap configuration and built-in diode elements, it offers 500A IDM and 0.00581 ohm max drain-source resistance. With Silicon Carbide material and UL recognition, this MOSFET operates b/w -40 to 150 °C for high-power requirements.
250 A
.00581 ohm
112 pF
500 A
167.9 ns
102.8 ns
FF6MR12KM1PHOSA1
Infineon's FF6MR12KM1PHOSA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring series connected, center tap configuration with built-in diode, it has max IDM of 500A and 0.00581 ohm RDS(on). Operating in enhancement mode at -40 to 150 °C, this MOSFET is UL recognized and designed for high-power systems.
CAB530M12BM3
Wolfspeed's CAB530M12BM3 is a N-CHANNEL FET with 1200V DS breakdown voltage, 1060A IDM, and 0.00355 ohm RDS. Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements and built-in diode. Operating in enhancement mode, this FET has a max operating temperature of 150°C and min of -40°C.
.00355 ohm
84 pF
1060 A
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