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Fairchild Semiconductor Power Bipolar Junction Transistors (BJT) 11

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
KSD1691YSTSTU by Fairchild Semiconductor

KSD1691YSTSTU

Fairchild Semiconductor

KSD1691YSTSTU by Fairchild Semiconductor is a NPN Power BJT with 20W power dissipation, hFE of 160, and 60V VCE. Ideal for applications requiring a single configuration transistor in through-hole package style, such as power amplifiers or voltage regulators.

5 A

60 V

SINGLE

160

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

TIP142TU by Fairchild Semiconductor

TIP142TU

Fairchild Semiconductor

TIP142TU by Fairchild Semiconductor is a NPN power BJT with Darlington configuration, 125W power dissipation, and 10A collector current. Ideal for high-power applications requiring a max collector-emitter voltage of 100V and min DC current gain of 500 hFE. Commonly used in flange mount setups due to its rectangular package shape.

10 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

BD13710S by Fairchild Semiconductor

BD13710S

Fairchild Semiconductor

Fairchild Semiconductor's BD13710S is a NPN BJT transistor with 60V VCE, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The package style is flange mount with matte tin finish in a rectangular shape.

1.5 A

60 V

SINGLE

63

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

13 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

250 MHz

BD238S by Fairchild Semiconductor

BD238S

Fairchild Semiconductor

Fairchild Semiconductor's BD238S is a PNP BJT transistor with 80V VCE, 2A IC, and 25W power dissipation. Ideal for switching applications due to its single configuration and 3MHz fT. The through-hole package with matte tin finish makes it suitable for various electronic designs.

2 A

80 V

SINGLE

25

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDW93CFTU by Fairchild Semiconductor

BDW93CFTU

Fairchild Semiconductor

Fairchild Semiconductor's BDW93CFTU is a NPN power BJT with 100V VCEO, 12A IC, and 30W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150°C, it offers high DC current gain of hFE ≥100.

ISOLATED

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE

100

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BDX34BTU by Fairchild Semiconductor

BDX34BTU

Fairchild Semiconductor

Fairchild Semiconductor's BDX34BTU is a PNP Darlington transistor with 70W power dissipation, 80V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min DC current gain of 750 and operates up to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

10 A

80 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDX53BTU by Fairchild Semiconductor

BDX53BTU

Fairchild Semiconductor

Fairchild Semiconductor's BDX53BTU is a NPN Darlington transistor with built-in diode, ideal for switching applications. With a max collector-emitter voltage of 80V and max collector current of 8A, it can handle up to 60W power dissipation. This through-hole transistor has a min DC current gain of 750 and operates at temperatures up to 150°C.

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

20 MHz

KSA1220AYSTSTU by Fairchild Semiconductor

KSA1220AYSTSTU

Fairchild Semiconductor

KSA1220AYSTSTU by Fairchild is a PNP BJT transistor with 160 min hFE, 1.2A IC, and 175MHz fT. Ideal for amplifier applications, it has a max operating temperature of 150°C and can handle up to 20W power dissipation in a rectangular package with matte tin finish.

1.2 A

160 V

SINGLE

160

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

175 MHz

KSC5042MSTU by Fairchild Semiconductor

KSC5042MSTU

Fairchild Semiconductor

KSC5042MSTU by Fairchild Semiconductor is a NPN Power BJT with 900V VCEO, 0.1A IC, and 4W Ptot. Ideal for switching applications due to its single configuration and hFE of 30. Features through-hole terminals in a rectangular package suitable for flange mounting.

HIGH RELIABILITY

.1 A

900 V

SINGLE

30

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

4 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

KSC2335YTU by Fairchild Semiconductor

KSC2335YTU

Fairchild Semiconductor

KSC2335YTU by Fairchild Semiconductor is a NPN BJT transistor with 400V VCEO, 7A IC, and 40W Ptot. Ideal for switching applications due to its single configuration and hFE of 40. Package style is flange mount with through-hole terminals.

7 A

400 V

SINGLE

40

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

KSD401FYTU by Fairchild Semiconductor

KSD401FYTU

Fairchild Semiconductor

KSD401FYTU by Fairchild Semiconductor is a NPN BJT transistor with 150V VCEO, 2A IC, and 25W Ptot. It is commonly used in amplifier applications due to its hFE of 120 and fT of 5MHz. The package style is flange mount with a rectangular shape and through-hole terminals.

ISOLATED

2 A

150 V

SINGLE

120

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

5 MHz