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Central Semiconductor Power Bipolar Junction Transistors (BJT) 11

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N3716PBFREE by Central Semiconductor

2N3716PBFREE

Central Semiconductor

2N3716PBFREE by Central Semiconductor is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its fast rise and fall times of 400ns.

COLLECTOR

10 A

80 V

SINGLE

30

400 ns

TO-3

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

150 W

400 ns

NO

MATTE TIN OVER NICKEL

PIN/PEG

BOTTOM

SWITCHING

SILICON

4 MHz

700 ns

.8 V

2N4237PBFREE by Central Semiconductor

2N4237PBFREE

Central Semiconductor

2N4237PBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.6V, hFE of 30, and IC of 3A. Ideal for switching applications due to its low saturation voltage and high collector current capacity. Operates in temperatures ranging from -65°C to 200°C, making it suitable for various industrial uses.

3 A

100 pF

40 V

SINGLE

30

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

6 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SWITCHING

SILICON

2 MHz

.6 V

TIP29CPBFREE by Central Semiconductor

TIP29CPBFREE

Central Semiconductor

TIP29CPBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.7V, hFE of 15, and IC of 1A. Ideal for switching applications, it has a max power dissipation of 30W and operates b/w -65 to 150°C. Its through-hole terminals make it suitable for various electronic devices.

1 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

30 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

.7 V

2N6055PBFREE by Central Semiconductor

2N6055PBFREE

Central Semiconductor

2N6055PBFREE by Central Semiconductor is a NPN Darlington BJT with max. collector-emitter voltage of 60V and max. collector current of 8A. It has a min DC current gain of 100, making it ideal for switching applications in various industries due to its high transition frequency of 4MHz and wide operating temperature range from -65°C to 200°C.

8 A

60 V

DARLINGTON

100

TO-3

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

NO

MATTE TIN OVER NICKEL

PIN/PEG

BOTTOM

SWITCHING

SILICON

4 MHz

2N6107PBFREE by Central Semiconductor

2N6107PBFREE

Central Semiconductor

2N6107PBFREE by Central Semiconductor is a PNP BJT with hFE of 30, VCEO of 70V, and IC of 7A. Ideal for switching applications due to its single configuration and silicon element material. Features flange mount style with through-hole terminals in a rectangular package shape.

COLLECTOR

7 A

70 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

MPQ2222APBFREE by Central Semiconductor

MPQ2222APBFREE

Central Semiconductor

MPQ2222APBFREE by Central Semiconductor is a NPN Power BJT with 4 separate elements. It has a max VCEsat of 0.3V, ideal for switching applications. With a max VCE of 40V and fT of 200MHz, it's suitable for high-speed circuits in various electronic devices.

8 pF

40 V

SEPARATE, 4 ELEMENTS

40

TO-116

R-PDIP-T14

e3

4

14

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

3 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

DUAL

SWITCHING

SILICON

200 MHz

.3 V

2N6052PBFREE by Central Semiconductor

2N6052PBFREE

Central Semiconductor

2N6052PBFREE by Central Semiconductor is a PNP Darlington power BJT with a max VCEsat of 3V. It is used for switching applications and has a max collector-emitter voltage of 100V.

COLLECTOR

12 A

500 pF

100 V

DARLINGTON

100

TO-3

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

260

PNP

150 W

NO

MATTE TIN

PIN/PEG

BOTTOM

10

SWITCHING

SILICON

4 MHz

3 V

MJE13005PBFREE by Central Semiconductor

MJE13005PBFREE

Central Semiconductor

MJE13005PBFREE by Central Semiconductor is a NPN BJT transistor for switching applications. It has VCEsat of 1V, IC of 4A, and hFE of 8. With max power dissipation of 75W, it operates b/w -65 to 150°C. Ideal for high-power switching circuits due to its fast rise/fall times and low collector-emitter voltage drop.

COLLECTOR

4 A

130 pF

400 V

SINGLE

8

900 ns

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

75 W

700 ns

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

4900 ns

800 ns

1 V

2N3053APBFREE by Central Semiconductor

2N3053APBFREE

Central Semiconductor

2N3053APBFREE by Central Semiconductor is a NPN BJT with VCEsat of 0.3V, hFE of 50, and IC of 0.7A. Ideal for power applications, it has a max operating temp of 200°C and fT of 100MHz. With a collector-emitter voltage of 60V, it suits various electronic designs requiring high power dissipation up to 5W.

.7 A

15 pF

60 V

SINGLE

50

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

5 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SILICON

100 MHz

.3 V

TIP112PBFREE by Central Semiconductor

TIP112PBFREE

Central Semiconductor

TIP112PBFREE by Central Semiconductor is a NPN Darlington BJT with 2.5V VCEsat, 50W power dissipation, and 100V VCEO. Ideal for amplifier applications, it has a hFE of 500 and operates b/w -65 to 150 °C. Package style is flange mount with matte tin over nickel finish in a rectangular shape with through-hole terminals.

2 A

100 pF

100 V

DARLINGTON

500

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2.5 V

TIP112TIN/LEAD by Central Semiconductor

TIP112TIN/LEAD

Central Semiconductor

TIP112TIN/LEAD by Central Semiconductor is a NPN Darlington BJT with max VCEsat of 2.5V, hFE of 500, and IC of 2A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a max power dissipation of 50W in a plastic package style.

2 A

100 pF

100 V

DARLINGTON

500

TO-220AB

R-PSFM-T3

e0

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2.5 V