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180 MHz Power Bipolar Junction Transistors (BJT) 17

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX718STOA by Diodes Incorporated

ZTX718STOA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STOB by Diodes Incorporated

ZTX718STOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STZ by Diodes Incorporated

ZTX718STZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1.5 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

180 MHz

.26 V

2SB1203S-H by Onsemi

2SB1203S-H

Onsemi

The Onsemi 2SB1203S-H is a NPN BJT transistor with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. With a power dissipation of 20W, it's suitable for various power electronics designs.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

20 W

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SB1203S-TL-H by Onsemi

2SB1203S-TL-H

Onsemi

The Onsemi 2SB1203S-TL-H is a NPN Power BJT for switching applications. Features include VCEsat of 0.4V, IC of 5A, and hFE of 35. With a max operating temperature of 150°C, it's ideal for high-power switching circuits in various electronic devices.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

20 W

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SB1203T-TL-H by Onsemi

2SB1203T-TL-H

Onsemi

Onsemi's 2SB1203T-TL-H is a NPN BJT transistor with VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max operating temp of 150 °C and fT of 180MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers high power dissipation at 20W.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

20 W

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SB1203T-H by Onsemi

2SB1203T-H

Onsemi

The Onsemi 2SB1203T-H is a NPN Power BJT with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. The transistor comes in a plastic/epoxy package with through-hole terminals, making it suitable for various power electronics designs.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

BCP56-16-QF by Nexperia

BCP56-16-QF

Nexperia

Nexperia's BCP56-16-QF is a NPN BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 1A, it operates at -55 to 150°C. Its GULL WING terminals and COLLECTOR case connection make it suitable for surface mount designs in automotive electronics.

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.35 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

180 MHz

.5 V

BCP56-QF by Nexperia

BCP56-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP56-QX by Nexperia

BCP56-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP56-10-QF by Nexperia

BCP56-10-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP56-10-QX by Nexperia

BCP56-10-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP55-16-QX by Nexperia

BCP55-16-QX

Nexperia

BCP55-16-QX by Nexperia is a NPN Power BJT for switching applications. It features a max VCEsat of 0.5V, hFE of 40, and can handle up to 1A IC. With a max operating temperature of 150°C, it's ideal for automotive electronics (AEC-Q101) and general purpose circuits requiring high-speed switching (fT: 180MHz).

COLLECTOR

1 A

6 pF

60 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP55-16-QF by Nexperia

BCP55-16-QF

Nexperia

Nexperia's BCP55-16-QF is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 40, and can handle a max collector-emitter voltage of 60V. With a small outline package style and Gull Wing terminals, it operates b/w -55 to 150 °C and is ideal for AEC-Q101 automotive standards.

COLLECTOR

1 A

6 pF

60 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP55-QX by Nexperia

BCP55-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

60 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP55-QF by Nexperia

BCP55-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

60 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP55-10-QX by Nexperia

BCP55-10-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

60 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V