Loading...

1 MHz Power Bipolar Junction Transistors (BJT) 7

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MJE800G by Onsemi

MJE800G

Onsemi

MJE800G by Onsemi is a NPN power BJT with 40W Pd, 750 hFE, and 60V Vce. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it has a max collector current of 4A and transition frequency of 1MHz.

BUILT IN BIAS RESISTOR

4 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJE4343G by Onsemi

MJE4343G

Onsemi

MJE4343G by Onsemi is a NPN Power BJT with 160V VCE, 16A IC, and 125W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 8 and fT of 1MHz for efficient performance.

COLLECTOR

16 A

160 V

SINGLE

8

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1 MHz

MJE4353G by Onsemi

MJE4353G

Onsemi

MJE4353G by Onsemi is a PNP BJT transistor with 160V VCEO, 16A IC, and 125W power dissipation. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

16 A

160 V

SINGLE

8

TO-218

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

125 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1 MHz

MJE700G by Onsemi

MJE700G

Onsemi

MJE700G by Onsemi is a PNP power BJT with 40W max power dissipation, 750 min hFE, and 60V max VCE. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it offers high performance in various electronic designs.

BUILT IN BIAS RESISTOR

4 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJE702G by Onsemi

MJE702G

Onsemi

MJE702G by Onsemi is a PNP BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

BUILT IN BIAS RESISTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJE802G by Onsemi

MJE802G

Onsemi

MJE802G by Onsemi is a NPN BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor. With hFE of 750 and fT of 1MHz, this transistor operates at up to 150 °C in a rectangular package with matte tin finish.

BUILT IN BIAS RESISTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJE803G by Onsemi

MJE803G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

BUILT IN BIAS RESISTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz