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45 W Power Bipolar Junction Transistors (BJT) 5

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NJVNJD35N04G by Onsemi

NJVNJD35N04G

Onsemi

NJVNJD35N04G by Onsemi is a NPN Darlington BJT with 45W power dissipation, 4A collector current, and 300 min hFE. Ideal for automotive applications due to AEC-Q101 standard compliance and high transition frequency of 90MHz.

4 A

DARLINGTON

300

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

45 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

90 MHz

STT13005D-K by STMicroelectronics

STT13005D-K

STMicroelectronics

STT13005D-K by STMicroelectronics is a NPN BJT with 400V VCE, 2A IC, and 45W Ptot. Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STT13005 by STMicroelectronics

STT13005

STMicroelectronics

STT13005 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

2 A

700 V

SINGLE

8

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

45 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STT13005D by STMicroelectronics

STT13005D

STMicroelectronics

STT13005D from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJF18008G by Onsemi

MJF18008G

Onsemi

The Onsemi MJF18008G is a NPN BJT transistor with 450V VCEO, 8A IC, and 45W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. Its package style is flange mount with through-hole terminals.

ISOLATED

8 A

450 V

SINGLE

6

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

Not Qualified

UL RECOGNIZED

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

13 MHz