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25 W Power Bipolar Junction Transistors (BJT) 8

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BDX53BFP by STMicroelectronics

BDX53BFP

STMicroelectronics

BDX53BFP by STMicroelectronics is a power bipolar junction transistor (BJT) with NPN polarity. It has a max VCEsat of 2V and can handle a max collector current (IC) of 8A. This transistor is commonly used for switching applications.

ISOLATED

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

29 W

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 V

BD238S by Fairchild Semiconductor

BD238S

Fairchild Semiconductor

Fairchild Semiconductor's BD238S is a PNP BJT transistor with 80V VCE, 2A IC, and 25W power dissipation. Ideal for switching applications due to its single configuration and 3MHz fT. The through-hole package with matte tin finish makes it suitable for various electronic designs.

2 A

80 V

SINGLE

25

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

KSD401FYTU by Fairchild Semiconductor

KSD401FYTU

Fairchild Semiconductor

KSD401FYTU by Fairchild Semiconductor is a NPN BJT transistor with 150V VCEO, 2A IC, and 25W Ptot. It is commonly used in amplifier applications due to its hFE of 120 and fT of 5MHz. The package style is flange mount with a rectangular shape and through-hole terminals.

ISOLATED

2 A

150 V

SINGLE

120

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

5 MHz

BUD42D-1G by Onsemi

BUD42D-1G

Onsemi

BUD42D-1G by Onsemi is a NPN BJT transistor with 350V VCE, 4A IC, and 25W Ptot. Ideal for switching applications, it has a single configuration with built-in diode in a plastic/epoxy package suitable for through-hole mounting.

BUILT-IN ANTISATURATION NETWORK

COLLECTOR

4 A

350 V

SINGLE WITH BUILT-IN DIODE

10

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

25 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

BD238G by Onsemi

BD238G

Onsemi

BD238G by Onsemi is a PNP BJT transistor with 80V VCEO, 2A IC, and 25W Ptot. Ideal for amplifier applications, it has hFE of 25, operates b/w -55 to 150 °C, and features a flange mount package style.

2 A

80 V

SINGLE

25

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

25 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

3 MHz

BD234G by Onsemi

BD234G

Onsemi

BD234G by Onsemi is a PNP BJT transistor with 45V VCEO, 2A IC, and 25W power dissipation. Ideal for amplifier applications, it has a hFE of 25 and operates up to 150°C. The package style is flange mount with a rectangular shape and matte tin finish in a through-hole terminal form.

2 A

45 V

SINGLE

25

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

3 MHz

2ST1480FP by STMicroelectronics

2ST1480FP

STMicroelectronics

2ST1480FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 25W, collector-emitter voltage of 80V, and operates up to 150 °C. Ideal for efficient control in electronic circuits.

ISOLATED

5 A

80 V

SINGLE

50

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

120 MHz

PHPT61002NYCLHX by Nexperia

PHPT61002NYCLHX

Nexperia

PHPT61002NYCLHX by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 20, and IC of 2A. With a max operating temperature of 175°C, it is ideal for high-power dissipation in small outline packages.

COLLECTOR

2 A

11 pF

100 V

SINGLE

20

MO-235

R-PSSO-G4

e3

1

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

25 W

IEC-60134

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

140 MHz

.3 V