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100 W Power Bipolar Junction Transistors (BJT) 11

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTE243 by Nte Electronics

NTE243

Nte Electronics

NTE243 by Nte Electronics is a NPN BJT with Darlington configuration, ideal for amplifier applications. With max power dissipation of 100W (abs) and 150W (ambient), it offers hFE of min 100. Featuring VCE of 80V and IC of 8A, this silicon transistor has a round package shape for flange mount.

COLLECTOR

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

NPN

150 W

100 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON

2STW1695 by STMicroelectronics

2STW1695

STMicroelectronics

2STW1695 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 100 W, operates up to 150 °C, and supports collector-emitter voltages of 140 V. Ideal for high-performance electronic circuits.

10 A

140 V

SINGLE

50

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

100 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

20 MHz

2STW4468 by STMicroelectronics

2STW4468

STMicroelectronics

2STW4468 by STMicroelectronics is an NPN BJT designed for amplifier applications. It features a max power dissipation of 100 W, a collector-emitter voltage of 140 V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

10 A

140 V

SINGLE

50

TO-247AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

20 MHz

STC03DE170HV by STMicroelectronics

STC03DE170HV

STMicroelectronics

STC03DE170HV by STMicroelectronics is a NPN BJT transistor with 3A max collector current, 100W power dissipation, and hFE of 10. Ideal for switching applications, it has a single configuration with built-in FET and diode in a rectangular package suitable for flange mount.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

10

TO-247

R-PSFM-T4

e3

1

4

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STA1695 by STMicroelectronics

2STA1695

STMicroelectronics

2STA1695 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 100W, collector-emitter voltage of 140V, and operates up to 150 °C. Its through-hole design ensures easy integration into various electronic circuits.

10 A

140 V

SINGLE

50

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

20 MHz

2STC4468 by STMicroelectronics

2STC4468

STMicroelectronics

2STC4468 by STMicroelectronics is a NPN BJT transistor with 140V VCE, 10A IC, and 100W power dissipation. Ideal for amplifier applications due to its 20MHz fT, 50 hFE, and -55 to +150°C operating range. Packaged in plastic/epoxy with through-hole terminals for easy mounting.

10 A

140 V

SINGLE

50

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

20 MHz

STH13009 by STMicroelectronics

STH13009

STMicroelectronics

STH13009 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

12 A

400 V

SINGLE

11

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

100 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BUT11AI,127 by NXP Semiconductors

BUT11AI,127

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 5 A; Maximum Power Dissipation Ambient: 100 W;

COLLECTOR

5 A

450 V

SINGLE

14

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4800 ns

1000 ns

1.5 V

STC03DE150 by STMicroelectronics

STC03DE150

STMicroelectronics

STC03DE150 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 3A, and a min DC gain (hFE) of 3.5. This versatile transistor comes in a flange mount package with through-hole terminals.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

3.5

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC03DE170 by STMicroelectronics

STC03DE170

STMicroelectronics

STC03DE170 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 3A, and a min DC gain (hFE) of 3.5. Its compact flange mount design ensures efficient performance in various electronic circuits.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

3.5

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL146G by Onsemi

BUL146G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 14 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 6 A;

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

6 A

400 V

SINGLE

8

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

100 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

14 MHz