PNP Other Function Transistors 30

Part# Info			Specs
Part	RoHS	Manufacturer	Description	Additional Features	Case Connection	Maximum Collector Current (IC)	Maximum Collector-Base Capacitance	Maximum Collector-Emitter Voltage	Configuration	Minimum DC Current Gain (hFE)	Maximum Drain Current (Abs) (ID)	Maximum Drain Current (ID)	Field Effect Transistor Technology	Maximum Fall Time (tf)	Highest Frequency Band	JESD-30 Code	JESD-609 Code	Moisture Sensitivity Level (MSL)	No. of Elements	No. of Terminals	Operating Mode	Maximum Operating Temperature	Minimum Operating Temperature	Package Body Material	Package Shape	Package Style (Meter)	Peak Reflow Temperature (C)	Polarity or Channel Type	Maximum Power Dissipation Ambient	Maximum Power Dissipation (Abs)	Qualification	Maximum Rise Time (tr)	Sub-Category	Surface Mount	Terminal Finish	Terminal Form	Terminal Position	Maximum Time At Peak Reflow Temperature (s)	Transistor Application	Transistor Element Material	Nominal Transition Frequency (fT)	Maximum VCEsat
DP200		Kodenshi Auk	Kodenshi Auk's DP200 is a PNP transistor with max power dissipation of 0.625W, ideal for low-power applications. With a min hFE of 40 and max IC of 1A, it operates up to 150°C, making it suitable for various electronic circuits requiring single configuration transistors.			1 A			SINGLE	40									1			150 Cel						PNP		.625 W			Other Transistors	NO
BC857BF-E6327		Infineon Technologies	PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 220;			.1 A			SINGLE	220									1			150 Cel						PNP		.25 W			Other Transistors	YES
BC860BF-E6327		Infineon Technologies	PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;			.1 A			SINGLE	220									1			150 Cel						PNP		.25 W			Other Transistors	YES
BSP61-E6327		Infineon Technologies	PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;			1 A			DARLINGTON	1000								1				150 Cel					260	PNP		1.5 W			Other Transistors	YES
BSP60-E6433		Infineon Technologies	PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 1000;			1 A			DARLINGTON	1000							e0	1				150 Cel					235	PNP		1.5 W			Other Transistors	YES	TIN LEAD
SMBTA92-E6433		Infineon Technologies	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;			.5 A			SINGLE	25								1	1			150 Cel					260	PNP		.36 W			Other Transistors	YES							50 MHz
BC856S-E6433		Infineon Technologies	PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 200;			.1 A				200												150 Cel						PNP		.25 W			Other Transistors	YES
BC858BL3-E6327		Infineon Technologies	PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;			.1 A			SINGLE	220								1	1			150 Cel					260	PNP		.25 W			Other Transistors	YES
2SA2154CT-Y(TPL3)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;			.1 A			SINGLE	120									1			150 Cel						PNP		.1 W			Other Transistors	YES							80 MHz
2SA1225-Y(Q)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1.5 A; No. of Elements: 1;			1.5 A			SINGLE	120									1			150 Cel						PNP		15 W			Other Transistors	YES
2SA2059(TE12L,F)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 200;			3 A			SINGLE	200									1			150 Cel						PNP		2.5 W			Other Transistors	YES
2SA1312-BL(TE85L,F)		Toshiba	Toshiba's 2SA1312-BL(TE85L,F) is a PNP transistor with max power dissipation of 0.15W, min DC current gain of 350, and max collector current of 0.1A. Ideal for applications requiring single configuration surface mount transistors in temperatures up to 125°C.			.1 A			SINGLE	350									1			125 Cel						PNP		.15 W			Other Transistors	YES
2SA1721-R(TE85L,F)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;			.1 A			SINGLE	30									1			150 Cel						PNP		.15 W			Other Transistors	YES							50 MHz
2SA2154MFV-GR(TPL3)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;			.15 A			SINGLE	200									1			150 Cel						PNP		.15 W			Other Transistors	YES							80 MHz
STX93003-AP		STMicroelectronics	STX93003-AP by STMicroelectronics is a PNP transistor with max power dissipation of 1.5W, hFE of 16, and IC of 1A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.			1 A			SINGLE	16							e3		1			150 Cel						PNP		1.5 W			Other Transistors	NO	Matte Tin (Sn)
BCP69-16/DG,115		NXP Semiconductors	NXP Semiconductors' BCP69-16/DG,115 is a PNP transistor with max. power dissipation of 1.35W and max. collector current of 2A. With min. DC current gain of 100 and fT of 40MHz, it's ideal for high-frequency applications in surface-mount configurations up to 150°C operating temperature.			2 A			SINGLE	100									1			150 Cel						PNP		1.35 W			Other Transistors	YES							40 MHz
2SA1827S-AY		Onsemi	Onsemi's 2SA1827S-AY is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.			4 A			SINGLE	140									1			150 Cel						PNP		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SA1483Y(TE12L,F)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .2 A;			.2 A			SINGLE	120									1			150 Cel						PNP		1 W			Other Transistors	YES							100 MHz
2SA1987O(Q)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 80;			15 A			SINGLE	80									1			150 Cel						PNP		180 W			Other Transistors	NO
BD244B-S		Bourns	BD244B-S by Bourns is a PNP transistor with 65W power dissipation, 15 min hFE, and 6A collector current. Ideal for applications requiring high-power amplification in circuits operating up to 150°C.			6 A			SINGLE	15									1			150 Cel						PNP		65 W			Other Transistors	NO
BD244C-S		Bourns	BD244C-S by Bourns is a PNP transistor with a max power dissipation of 65W and max collector current of 6A. With hFE of min 15, it's ideal for high-power applications in temperatures up to 150°C.			6 A			SINGLE	15									1			150 Cel						PNP		65 W			Other Transistors	NO
TTA0002(Q)		Toshiba	PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 18 A; Maximum Operating Temperature: 150 Cel;			18 A			SINGLE	80									1			150 Cel						PNP		180 W			Other Transistors	NO
2SA1855S-AY		Onsemi	2SA1855S-AY by Onsemi is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150°C.			4 A			SINGLE	140									1			150 Cel						PNP		1.5 W			Other Transistors	NO	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
BCP5116H6433XTMA1		Infineon Technologies	Infineon's BCP5116H6433XTMA1 is a PNP transistor with max power dissipation of 2W, hFE of 100, and IC of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.			1 A			SINGLE	100								1	1			150 Cel						PNP		2 W			Other Transistors	YES
BFW20		Texas Instruments	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Operating Temperature: 175 Cel;						SINGLE										1			175 Cel						PNP		.36 W			Other Transistors	NO							40 MHz
BC857BTE6327		Infineon Technologies	PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;			.1 A			SINGLE	220								1	1			150 Cel					260	PNP		.25 W			Other Transistors	YES
PBSS5160K,115		NXP Semiconductors	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): 1 A;			1 A			SINGLE	100									1			150 Cel						PNP		.425 W			Other Transistors	YES							150 MHz
PBSS9110AS,126		NXP Semiconductors	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;			1 A			SINGLE	125									1			150 Cel						PNP		.83 W			Other Transistors	NO							100 MHz
PBSS9110S,126		NXP Semiconductors	PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;			1 A				125												150 Cel						PNP		.83 W			Other Transistors	NO							100 MHz
PMEM4030PS,115		NXP Semiconductors	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;			2 A			SINGLE	80									1			150 Cel						PNP		1 W			Other Transistors	YES							100 MHz