Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DF80R12W2H3_B11
Infineon Technologies
N-Channel; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V;
ISOLATED
50 A
1200 V
COMPLEX
6.5 V
20 V
R-XUFM-X22
2
22
150 Cel
-40 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-Channel
190 W
NO
UPPER
POWER CONTROL
SILICON
600 ns
49 ns
1.7 V
DF1000R17IE4DB2BOSA1
N-Channel; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Transistor Application: POWER CONTROL;
1390 A
1700 V
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
6.4 V
R-XUFM-X12
1
12
6250 W
1910 ns
830 ns
2.45 V
FD1000R17IE4DB2BOSA1
N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 830 ns; Maximum Gate-Emitter Voltage: 20 V;
IKD15N60RAATMA1
N-Channel; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 430 ns; Maximum Gate-Emitter Voltage: 20 V;
30 A
600 V
5.7 V
175 Cel
250 W
430 ns
26 ns
2.1 V
SGP30N60XKSA1
N-Channel; Maximum Collector Current (IC): 60 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 419 ns; Minimum Operating Temperature: -55 Cel; Maximum Gate-Emitter Voltage: 20 V;
60 A
5 V
-55 Cel
419 ns
93 ns
DF75R12W1H4FB11BOMA1
N-Channel; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Operating Temperature: 125 Cel;
125 Cel
230 W
500 ns
58 ns
2.65 V
FD600R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 975 A; Maximum VCEsat: 3.1 V; Case Connection: ISOLATED; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
975 A
4800 W
1220 ns
470 ns
3.1 V
FF800R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1300 A; Nominal Turn Off Time (toff): 1240 ns; Nominal Turn On Time (ton): 540 ns; Maximum Gate-Emitter Voltage: 20 V;
1300 A
1240 ns
540 ns
FD1000R33HE3KBOSA1
N-Channel; Maximum Power Dissipation (Abs): 9600 W; Maximum VCEsat: 3.1 V; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
3300 V
-50 Cel
9600 W
3550 ns
1150 ns
FD401R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 3150 W; Maximum Collector Current (IC): 650 A; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Nominal Turn Off Time (toff): 1210 ns;
650 A
3150 W
1210 ns
550 ns
FZ1600R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 12500 W; Maximum Collector Current (IC): 2600 A; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1700 V; Peak Reflow Temperature (C): NOT SPECIFIED;
2600 A
12500 W
1360 ns
490 ns
FZ800R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 6600 W; Maximum Collector Current (IC): 1300 A; Nominal Turn Off Time (toff): 1220 ns; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: ISOLATED;
6600 W
440 ns
FZ1200R17KE3B2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 8950 W; Maximum Collector Current (IC): 1900 A; Maximum Operating Temperature: 125 Cel; Maximum VCEsat: 2.45 V; Case Connection: ISOLATED;
1900 A
8950 W
1900 ns
900 ns
FZ1200R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1950 A; Maximum VCEsat: 3.1 V; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
1950 A
460 ns
FZ2400R17HE4B9NPSA1
N-Channel; Maximum Power Dissipation (Abs): 15500 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: ISOLATED; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON;
15500 W
2100 ns
760 ns
2.3 V
FD-DF80R12W1H3_B52
N-Channel; Maximum Power Dissipation (Abs): 215 W; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel;
215 W
320 ns
43 ns
2.4 V
FS215R04A1E3DBOMA1
Infineon's FS215R04A1E3DBOMA1 is an N-Channel IGBT with VCEsat of 1.7V, toff of 340ns, and Pmax of 715W. Ideal for high-power applications requiring a max VCE of 400V, such as motor drives and renewable energy systems. Operating temperatures range from -40°C to 150°C.
290 A
400 V
715 W
340 ns
150 ns
FS400R07A1E3H5BPSA1
N-Channel; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 500 A; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel; Nominal Turn Off Time (toff): 580 ns;
500 A
650 V
750 W
580 ns
200 ns
1.9 V
FS600R07A2E3B31BOSA1
N-Channel; Maximum Power Dissipation (Abs): 1300 W; Maximum Collector Current (IC): 530 A; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 1.5 V; Maximum Collector-Emitter Voltage: 650 V;
530 A
1300 W
190 ns
1.5 V
FS800R07A2E3B31BOSA1
Infineon's FS800R07A2E3B31BOSA1 is an N-Channel IGBT with VCEsat of 1.5V, toff of 620ns, and Pmax of 1550W. Ideal for high-power applications like industrial motor drives due to its max VCE of 650V, IC of 700A, and operating temp range from -40°C to 150°C.
700 A
1550 W
620 ns
230 ns
FZ1600R17HP4B2BOSA2
N-Channel; Maximum Power Dissipation (Abs): 10500 W; Maximum VCEsat: 2.25 V; Nominal Turn Off Time (toff): 1710 ns; Case Connection: ISOLATED; Nominal Turn On Time (ton): 805 ns;
10500 W
1710 ns
805 ns
2.25 V
FZ1800R17HP4B29BOSA2
N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 2.25 V;
11500 W
1860 ns
880 ns
FZ3600R17HP4B2BOSA2
N-Channel; Maximum Power Dissipation (Abs): 19500 W; Nominal Turn Off Time (toff): 2095 ns; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum VCEsat: 2.25 V; Maximum Operating Temperature: 150 Cel;
19500 W
2095 ns
945 ns
2PS12017E44G35911NOSA1
N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1700 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 1060 ns; Nominal Turn Off Time (toff): 2380 ns;
1700 A
2380 ns
1060 ns
2.2 V
F575R06KE3B5BOSA1
N-Channel; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum VCEsat: 1.9 V; Package Body Material: UNSPECIFIED;
R-XUFM-X35
35
270 ns
45 ns
IRGIB4640DPBF
N-Channel; Maximum Collector Current (IC): 65 A; Transistor Element Material: SILICON; Maximum Gate-Emitter Voltage: 20 V; Nominal Turn On Time (ton): 64 ns; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
65 A
119 ns
64 ns
FF400R07A01E3S6XKSA2
FF400R07A01E3S6XKSA2 by Infineon is an N-Channel IGBT with a max VCEsat of 6.5V, IC of 800A, and Pdiss of 1500W. Ideal for high-power applications like industrial motor drives due to its high voltage and current capabilities.
800 A
700 V
1500 W
530 ns
140 ns
FS200R07A5E3S6BPSA1
N-Channel; Maximum Power Dissipation (Abs): 630 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 440 ns; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
705 V
630 W
FD1000R33HE3KB60BPSA1
N-Channel; Maximum Power Dissipation (Abs): 11500 W; Nominal Turn Off Time (toff): 3550 ns; Case Connection: ISOLATED; Nominal Turn On Time (ton): 1150 ns; Maximum Operating Temperature: 150 Cel;
FD1000R33HL3KB60BPSA1
N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 1050 ns; Maximum Operating Temperature: 150 Cel;
4700 ns
1050 ns
2.85 V
FZ1000R33HE3B60BPSA1
N-Channel; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Collector-Emitter Voltage: 3300 V; Case Connection: ISOLATED; Maximum Gate-Emitter Voltage: 20 V;
FZ1500R33HE3B60BPSA1
N-Channel; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 150 Cel; Nominal Turn Off Time (toff): 3550 ns; Transistor Element Material: SILICON; Case Connection: ISOLATED;
FZ1500R33HL3B60BPSA1
N-Channel; Maximum Power Dissipation (Abs): 17000 W; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Nominal Turn Off Time (toff): 4700 ns; Nominal Turn On Time (ton): 1050 ns; Maximum VCEsat: 2.85 V;
17000 W
IGA03N120H2XKSA1
Infineon's IGA03N120H2XKSA1 is an N-Channel IGBT with 1200V VCE, 310ns toff, and 14.4ns ton. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
3.9 V
e3
TIN
310 ns
14.4 ns
FF1800R12IE5PBPSA1
N-Channel; Transistor Element Material: SILICON; Nominal Turn Off Time (toff): 800 ns; Maximum Gate-Emitter Threshold Voltage: 6.35 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 175 Cel;
6.35 V
800 ns
510 ns
2.15 V
FS200R07A02E3S6BKSA2
N-Channel; Maximum Power Dissipation (Abs): 694 W; Maximum Collector Current (IC): 400 A; Maximum Collector-Emitter Voltage: 700 V; Nominal Turn Off Time (toff): 570 ns; Maximum VCEsat: 6.5 V;
400 A
694 W
570 ns
220 ns
FS400R07A3E3H6BPSA1
Infineon Technologies' FS400R07A3E3H6BPSA1 is an N-Channel IGBT with a max VCEsat of 6.5V, nominal toff of 430ns, and max power dissipation of 811W. It is commonly used in applications requiring high collector-emitter voltage (705V) and current (5001A), such as power electronics and motor drives.
5001 A
811 W
FS45MR12W1M1B11BOMA1
N-Channel; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: ISOLATED; Nominal Turn Off Time (toff): 55300 ns;
55300 ns
14100 ns
5.55 V
FS900R08A2P2B31BOSA1
N-Channel; Maximum Power Dissipation (Abs): 1546 W; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 750 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Case Connection: ISOLATED;
750 V
1546 W
820 ns
FS900R08A2P2B32BOSA1
Infineon's FS900R08A2P2B32BOSA1 IGBT features 750V VCE, 6.5V VGE, and 1546W Ptot. Ideal for high-power applications with N-Channel polarity, it operates b/w -40°C to 150°C efficiently with fast turn-on/off times of 500ns and 820ns respectively.
IFF450B12ME4S8PB11BPSA1
N-Channel; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: ISOLATED; Minimum Operating Temperature: -40 Cel;
690 ns
250 ns
IFF600B12ME4S8PB11BOSA1
N-Channel; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 750 ns; Case Connection: ISOLATED;
750 ns
IKFW50N60ETXKSA1
IKFW50N60ETXKSA1 by Infineon: N-Channel IGBT with VCEsat of 2V, toff of 378ns, and Pdiss of 164W. Ideal for high-power applications like motor drives and renewable energy systems due to its max VCE of 600V and IC of 73A. Operating temp range from -40°C to 175°C ensures reliability in various environments.
73 A
164 W
378 ns
62 ns
2 V
IKFW75N60ETXKSA1
Infineon IKFW75N60ETXKSA1 is an N-Channel IGBT with VCEsat of 2V, toff of 417ns, and Pmax of 178W. Ideal for high-power applications like motor drives and inverters due to its max VCE of 600V, IC of 80A, and operating temp range from -40°C to 175°C.
80 A
178 W
417 ns
79 ns
IKW15N120BH6XKSA1
IKW15N120BH6XKSA1 by Infineon is an N-Channel IGBT with VCEsat of 2.3V, toff of 373ns, and Pmax of 200W. Ideal for high-power applications like motor drives due to its VCE rating of 1200V and IC of 30A. Operating temp range from -40°C to +175°C makes it suitable for various industrial uses.
6.3 V
200 W
373 ns
46 ns
2LS20017E42W36702NOSA1
N-Channel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1700 V; Minimum Operating Temperature: -25 Cel;
-25 Cel
6MS16017P43W40382NOSA1
N-Channel; Minimum Operating Temperature: -25 Cel; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1700 V; Maximum Operating Temperature: 125 Cel;
6MS16017P43W40383NOSA1
N-Channel; Maximum Operating Temperature: 125 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Minimum Operating Temperature: -25 Cel;
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