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469 W Insulated Gate Bipolar Transistors (IGBT) 13

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW80H65DFB by STMicroelectronics

STGW80H65DFB

STMicroelectronics

STGW80H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 469W Pd. It operates up to 175°C making it ideal for high-power applications like motor drives and inverters.

120 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGW80V60DF by STMicroelectronics

STGW80V60DF

STMicroelectronics

STGW80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 600V collector-emitter voltage, and 120A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

120 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT80H65DFB by STMicroelectronics

STGWT80H65DFB

STMicroelectronics

STGWT80H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 650V collector-emitter voltage, and 120A collector current. It operates up to 175 °C making it ideal for high-power applications in industries like automotive and renewable energy.

120 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT80V60DF by STMicroelectronics

STGWT80V60DF

STMicroelectronics

STGWT80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 175 °C max temp, 600V collector-emitter voltage. Ideal for high-power applications like motor drives and inverters due to its 120A collector current capacity.

120 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGY80H65DFB by STMicroelectronics

STGY80H65DFB

STMicroelectronics

STMicroelectronics' STGY80H65DFB is an N-CHANNEL IGBT with 650V VCEsat, 120A IC, and 469W Pd. Ideal for POWER CONTROL applications due to its fast turn-off time of 358ns and high operating temperature range (-55 °C to 175°C).

COLLECTOR

120 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSIP-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

358 ns

128 ns

2 V

STGW80V60F by STMicroelectronics

STGW80V60F

STMicroelectronics

STGW80V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for power control applications due to its fast turn-off time (262ns) and high collector-emitter voltage (600V). Package style: FLANGE MOUNT.

120 A

600 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

STGWT80V60F by STMicroelectronics

STGWT80V60F

STMicroelectronics

STGWT80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for POWER CONTROL applications due to its fast ton of 90ns and toff of 262ns at a max VCE of 600V.

COLLECTOR

120 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

FGHL75T65LQDT by Onsemi

FGHL75T65LQDT

Onsemi

FGHL75T65LQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.35V and IC of 80A, ideal for POWER CONTROL applications. It features a package style of FLANGE MOUNT, operating temperature range from -55 to 175°C, and a turn-off time of 696ns.

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

696 ns

88 ns

1.35 V

STGW80H65FB by STMicroelectronics

STGW80H65FB

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

120 A

650 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWA80H65FB by STMicroelectronics

STGWA80H65FB

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Gate-Emitter Threshold Voltage: 7 V;

120 A

650 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT80H65FB by STMicroelectronics

STGWT80H65FB

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;

120 A

650 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGW80H65FB-4 by STMicroelectronics

STGW80H65FB-4

STMicroelectronics

STGW80H65FB-4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 120A collector current, and operates in temperatures from -55 °C to 175 °C. Its robust design includes a built-in diode and Kelvin sensor for enhanced performance.

120 A

650 V

SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

7 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

448 ns

104 ns

2 V

FGHL75T65LQDTL4 by Onsemi

FGHL75T65LQDTL4

Onsemi

FGHL75T65LQDTL4 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.35V and a max IC of 80A. It is designed for power control applications, featuring a single configuration with built-in diode and a package style of flange mount.

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

469 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

660 ns

60 ns

1.35 V