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300 W Insulated Gate Bipolar Transistors (IGBT) 11

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IXSK35N120AU1 by IXYS Corporation

IXSK35N120AU1

IXYS Corporation

IXYS Corporation's IXSK35N120AU1 is an N-CHANNEL IGBT with 1200V VCE, 70A IC, and 4V VCEsat. Ideal for MOTOR CONTROL applications, it has a built-in diode, 1100ns toff, and can handle up to 300W power dissipation.

HIGH SPEED

COLLECTOR

70 A

1200 V

SINGLE WITH BUILT-IN DIODE

8 V

20 V

TO-264

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

1100 ns

230 ns

4 V

IXSH45N120 by IXYS Corporation

IXSH45N120

IXYS Corporation

IXYS Corporation's IXSH45N120 is an N-CHANNEL IGBT transistor with 1200V VCE, 75A IC, and 3V VCEsat. Ideal for MOTOR CONTROL applications, it has a toff of 1650ns and ton of 330ns, housed in a PLASTIC/EPOXY package with FLANGE MOUNT style.

COLLECTOR

75 A

1200 V

SINGLE

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

1650 ns

330 ns

3 V

IXSH45N100 by IXYS Corporation

IXSH45N100

IXYS Corporation

IXYS Corporation's IXSH45N100 is an N-CHANNEL IGBT with 1000V VCEsat, 75A IC, and 300W power dissipation. Ideal for POWER CONTROL applications, it has a turn-off time of 2750ns and operates up to 150°C.

COLLECTOR

75 A

1000 V

SINGLE

1500 ns

7 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

2750 ns

400 ns

2.7 V

NGTB30N65IHL2WG by Onsemi

NGTB30N65IHL2WG

Onsemi

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; JESD-609 Code: e3;

60 A

650 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

300 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn) - annealed

NGTB35N60FL2WG by Onsemi

NGTB35N60FL2WG

Onsemi

NGTB35N60FL2WG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 70A IC, and 300W Pd. It operates up to 175°C making it ideal for high-power applications like motor drives and inverters. With surface mount capability and a gate-emitter threshold voltage of 6.5V, it offers efficient power management in various industrial settings.

70 A

600 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

300 W

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

NGTB35N65FL2WG by Onsemi

NGTB35N65FL2WG

Onsemi

The Onsemi NGTB35N65FL2WG is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 300W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.

70 A

650 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

300 W

Insulated Gate BIP Transistors

NO

MATTE TIN

STGE50NB60HD by STMicroelectronics

STGE50NB60HD

STMicroelectronics

STGE50NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max VCEsat of 2.8V, 600V collector-emitter voltage, and handles up to 100A current. With a compact flange mount design, it operates efficiently at temperatures up to 150 °C.

ISOLATED

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

MOTOR CONTROL

SILICON

540 ns

90 ns

2.8 V

NGTB45N60S2WG by Onsemi

NGTB45N60S2WG

Onsemi

NGTB45N60S2WG by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 2.3V and Max IC of 90A. Ideal for POWER CONTROL applications, it has a Max VCE of 600V and can operate in temperatures ranging from -55 to 175 °C.

90 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247AD

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

232 ns

2.3 V

NGTB50N65S1WG by Onsemi

NGTB50N65S1WG

Onsemi

The Onsemi NGTB50N65S1WG is an N-CHANNEL IGBT with a max VCEsat of 2.45V and IC of 140A. Ideal for POWER CONTROL applications, it has a turn-off time of 228ns and can operate at temperatures ranging from -55 to 175 °C.

140 A

650 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247AD

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

228 ns

118 ns

2.45 V

IXGA30N120B3-TRL by IXYS Corporation

IXGA30N120B3-TRL

IXYS Corporation

IXGA30N120B3-TRL by IXYS is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 300W power dissipation. Ideal for power control applications, it has a fast turn-off time of 331ns and low VCEsat of 3.5V. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package.

LOW CONDUCTION LOSS

COLLECTOR

60 A

1200 V

SINGLE

380 ns

5 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

300 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

580 ns

331 ns

53 ns

3.5 V

IXGA48N60C3-TRL by Littelfuse

IXGA48N60C3-TRL

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 75 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

75 A

600 V

SINGLE

5.5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

300 W

YES

MATTE TIN

GULL WING

SINGLE

10

POWER CONTROL

SILICON

187 ns

45 ns

2.5 V