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167 W Insulated Gate Bipolar Transistors (IGBT) 12

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGB20H60DF by STMicroelectronics

STGB20H60DF

STMicroelectronics

STGB20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 40A, and Ptot of 167W. Ideal for power control applications, it has a toff of 259ns and ton of 55.9ns. Suitable for surface mount with a max VCE of 600V and operating temperature range from -55 °C to +175°C.

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

167 W

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

259 ns

55.9 ns

2 V

NGTG30N60FWG by Onsemi

NGTG30N60FWG

Onsemi

NGTG30N60FWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 167W Pd. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.

60 A

600 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

167 W

Insulated Gate BIP Transistors

NO

Tin (Sn)

STGW20V60DF by STMicroelectronics

STGW20V60DF

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;

40 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

167 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT20V60DF by STMicroelectronics

STGWT20V60DF

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;

40 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

167 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGW20H60DF by STMicroelectronics

STGW20H60DF

STMicroelectronics

STGW20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V and IC of 40A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and turn-off time of 259ns. This SINGLE transistor in PLASTIC/EPOXY package operates b/w -55 to 175 °C.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

259 ns

259 ns

55.9 ns

2 V

STGWT20H60DF by STMicroelectronics

STGWT20H60DF

STMicroelectronics

STGWT20H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 167W power dissipation. Ideal for power control applications due to its fast turn-on/off times and high collector-emitter voltage. Package style: FLANGE MOUNT, terminal form: THROUGH-HOLE, and operating temperature range: -55 to 175 °C.

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

259 ns

259 ns

55.9 ns

2 V

STGB20V60F by STMicroelectronics

STGB20V60F

STMicroelectronics

STGB20V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 20A, and Ptot of 167W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and turn-on time (ton) of 49ns. Suitable for surface mount with a max operating temperature of 175 °C.

COLLECTOR

20 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

167 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

173 ns

49 ns

2.2 V

STGP20V60F by STMicroelectronics

STGP20V60F

STMicroelectronics

STGP20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 20A IC, and 2.2V VCE. Ideal for POWER CONTROL applications, it has a toff of 173ns and ton of 49ns. The package style is FLANGE MOUNT with a max power dissipation of 167W at 175 °C operating temperature.

COLLECTOR

20 A

600 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

173 ns

49 ns

2.2 V

FGP30N6S2D by Fairchild Semiconductor

FGP30N6S2D

Fairchild Semiconductor

Fairchild Semiconductor's FGP30N6S2D is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 45A max collector current. It has a built-in diode, 100ns fall time, and 163ns turn off time. Ideal for power control applications with a max power dissipation of 167W at up to 150°C operating temperature.

LOW CONDUCTION LOSS

45 A

600 V

SINGLE WITH BUILT-IN DIODE

100 ns

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

167 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

163 ns

28 ns

STGWA8M120DF3 by STMicroelectronics

STGWA8M120DF3

STMicroelectronics

STGWA8M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with low turn-off times.

COLLECTOR

16 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

356 ns

28.8 ns

2.3 V

STGWA30H65DFB2 by STMicroelectronics

STGWA30H65DFB2

STMicroelectronics

STGWA30H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 50A, and Pmax of 167W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 184ns and high collector-emitter voltage rating of 650V. Suitable for use in various power control systems requiring efficient switching capabilities.

COLLECTOR

50 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

184 ns

27.5 ns

2.1 V

STGP30H65DFB2 by STMicroelectronics

STGP30H65DFB2

STMicroelectronics

STGP30H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 50A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode support.

COLLECTOR

50 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

184 ns

27.5 ns

2.1 V