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74 A Insulated Gate Bipolar Transistors (IGBT) 11

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IGW40N65F5FKSA1 by Infineon Technologies

IGW40N65F5FKSA1

Infineon Technologies

Infineon's IGW40N65F5FKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications in industrial machinery, renewable energy systems, and electric vehicles due to its robust design and high operating temperature of 175°C.

74 A

650 V

4.8 V

20 V

e3

175 Cel

N-CHANNEL

255 W

Insulated Gate BIP Transistors

NO

TIN

IGW40N65H5FKSA1 by Infineon Technologies

IGW40N65H5FKSA1

Infineon Technologies

IGW40N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 255W power dissipation, 650V collector-emitter voltage, and 74A collector current. It operates up to 175°C and has a gate-emitter threshold voltage of 4.8V. Ideal for high-power applications in various industries due to its robust performance and efficiency.

74 A

650 V

4.8 V

20 V

e3

175 Cel

N-CHANNEL

255 W

Insulated Gate BIP Transistors

NO

TIN

IKW40N65F5FKSA1 by Infineon Technologies

IKW40N65F5FKSA1

Infineon Technologies

IKW40N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 200ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT.

74 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

200 ns

34 ns

2.1 V

IKW40N65H5FKSA1 by Infineon Technologies

IKW40N65H5FKSA1

Infineon Technologies

IKW40N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 74A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and a max operating temperature of 175°C.

COLLECTOR

74 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

217 ns

32 ns

2.1 V

IGW40N65F5AXKSA1 by Infineon Technologies

IGW40N65F5AXKSA1

Infineon Technologies

IGW40N65F5AXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 650V and current of 74A. It has a turn-off time of 200ns and turn-on time of 30ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals, suitable for flange mount installation.

COLLECTOR

74 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

200 ns

30 ns

IGW40N65H5AXKSA1 by Infineon Technologies

IGW40N65H5AXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 74 A; No. of Terminals: 3; Transistor Element Material: SILICON;

COLLECTOR

74 A

650 V

SINGLE

TO-247

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

203 ns

31 ns

IKW40N65F5AXKSA1 by Infineon Technologies

IKW40N65F5AXKSA1

Infineon Technologies

IKW40N65F5AXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 30ns ton. It is used for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and AEC-Q101 reference standard compliance.

COLLECTOR

74 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

200 ns

30 ns

IKW40N65H5AXKSA1 by Infineon Technologies

IKW40N65H5AXKSA1

Infineon Technologies

IKW40N65H5AXKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications, it has a toff of 204ns and ton of 32ns. Operating b/w -40 to 175°C, it features a VCE(max) of 650V and VGE(th) of 4.8V.

COLLECTOR

74 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

204 ns

32 ns

2.1 V

AIGW40N65H5XKSA1 by Infineon Technologies

AIGW40N65H5XKSA1

Infineon Technologies

AIGW40N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT for POWER CONTROL applications. It has a max VCEsat of 2.1V, collector-emitter voltage of 650V, and collector current of 74A. With a turn-off time of 203ns and power dissipation of 250W, it operates in temperatures ranging from -40 to 175°C.

COLLECTOR

74 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

203 ns

31 ns

2.1 V

AIGW40N65F5XKSA1 by Infineon Technologies

AIGW40N65F5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Terminal Finish: TIN;

COLLECTOR

74 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

200 ns

30 ns

2.1 V

AIKW40N65DF5XKSA1 by Infineon Technologies

AIKW40N65DF5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Transistor Application: POWER CONTROL;

COLLECTOR

74 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

200 ns

30 ns

2.1 V