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600 A Insulated Gate Bipolar Transistors (IGBT) 18

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM300GA170DLCHOSA1 by Infineon Technologies

BSM300GA170DLCHOSA1

Infineon Technologies

Infineon's BSM300GA170DLCHOSA1 is an N-CHANNEL IGBT with 1700V max collector-emitter voltage and 600A max collector current. It features a single configuration with built-in diode, 930ns turn off time, and 200ns turn on time. Ideal for high-power applications requiring fast switching capabilities in isolated case connections.

ISOLATED

600 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

930 ns

200 ns

FD600R12KF4NOSA1 by Infineon Technologies

FD600R12KF4NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; JESD-30 Code: R-XUFM-X5; Package Body Material: UNSPECIFIED;

ISOLATED

600 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1150 ns

800 ns

FF600R12KF4NOSA1 by Infineon Technologies

FF600R12KF4NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Shape: RECTANGULAR;

ISOLATED

600 A

1200 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

2

10

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1150 ns

800 ns

FF450R17ME4BOSA1 by Infineon Technologies

FF450R17ME4BOSA1

Infineon Technologies

FF450R17ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V, max current of 600A, and turn off time of 1600ns. Ideal for power control applications due to its high operating temperature of 175°C and fast turn on time of 380ns.

ISOLATED

600 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1600 ns

380 ns

FF600R12IS4FBOSA1 by Infineon Technologies

FF600R12IS4FBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3700 W; Maximum Collector Current (IC): 600 A; Package Style (Meter): FLANGE MOUNT;

ISOLATED

600 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

3700 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

630 ns

270 ns

3.75 V

FS450R12KE3BOSA1 by Infineon Technologies

FS450R12KE3BOSA1

Infineon Technologies

FS450R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, 1200V max voltage, and 600A max current. It has a toff of 810ns and ton of 400ns. Ideal for high-power applications requiring fast switching capabilities in industries like renewable energy and industrial motor drives.

ISOLATED

600 A

1200 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X29

6

29

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

810 ns

400 ns

FS450R17KE4BOSA1 by Infineon Technologies

FS450R17KE4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Terminal Form: UNSPECIFIED; Transistor Application: POWER CONTROL;

ISOLATED

600 A

1700 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X29

6

29

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1600 ns

380 ns

FZ600R12KE4HOSA1 by Infineon Technologies

FZ600R12KE4HOSA1

Infineon Technologies

FZ600R12KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 600A. It features a single configuration with built-in diode, ideal for power control applications. This rectangular package has a nominal turn-off time of 810ns and operates at temperatures up to 150°C.

ISOLATED

600 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

810 ns

370 ns

DF600R12IP4DBOSA1 by Infineon Technologies

DF600R12IP4DBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 600 A; JESD-30 Code: R-XUFM-X8; Nominal Turn Off Time (toff): 1350 ns;

ISOLATED

600 A

1200 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X8

1

8

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1350 ns

370 ns

FF450R12ME3BOSA1 by Infineon Technologies

FF450R12ME3BOSA1

Infineon Technologies

FF450R12ME3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 600A, and turn-off time of 810ns. Ideal for applications requiring high power switching in industrial automation and renewable energy systems.

ISOLATED

600 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

810 ns

400 ns

FF600R12IE4BOSA1 by Infineon Technologies

FF600R12IE4BOSA1

Infineon Technologies

FF600R12IE4BOSA1 by Infineon is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.05V and can handle up to 600A of Collector Current. Ideal for POWER CONTROL applications, it operates at a max temperature of 175°C, making it suitable for high-power systems.

ISOLATED

600 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

3350 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1020 ns

410 ns

2.05 V

F3L400R12PT4B26BOSA1 by Infineon Technologies

F3L400R12PT4B26BOSA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 2150 W; Maximum Collector Current (IC): 600 A; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;

600 A

1200 V

20 V

1

150 Cel

NOT SPECIFIED

2150 W

Insulated Gate BIP Transistors

NOT SPECIFIED

2.15 V

FF450R17ME4B11BOSA1 by Infineon Technologies

FF450R17ME4B11BOSA1

Infineon Technologies

Infineon Technologies' FF450R17ME4B11BOSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.3V and IC of 600A. Operates at -40 to 150 °C, featuring a max VCE of 1700V and Pmax of 2500W in a rectangular package style.

ISOLATED

600 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X11

2

11

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

2500 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1600 ns

380 ns

2.3 V

MG12450WB-BN2MM by Littelfuse

MG12450WB-BN2MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Terminal Position: UPPER;

ISOLATED

600 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X11

2

11

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

680 ns

220 ns

FF600R12IS4F by Infineon Technologies

FF600R12IS4F

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3700 W; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V;

ISOLATED

600 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

3700 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

630 ns

270 ns

3.75 V

MG17450WB-BN4MM by Littelfuse

MG17450WB-BN4MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Terminal Form: UNSPECIFIED; Maximum Operating Temperature: 125 Cel;

ISOLATED

600 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X11

2

11

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

1300 ns

400 ns

2.45 V

FF450R17ME4PBOSA1 by Infineon Technologies

FF450R17ME4PBOSA1

Infineon Technologies

FF450R17ME4PBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode and thermistor. It is used for POWER CONTROL applications, with a max operating temperature of 175°C and a max collector-emitter voltage of 1700V.

ISOLATED

600 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1600 ns

380 ns

FF450R17ME4PB11BOSA1 by Infineon Technologies

FF450R17ME4PB11BOSA1

Infineon Technologies

Infineon Technologies' FF450R17ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Ideal for POWER CONTROL applications, it has a max voltage of 1700V, current of 600A, and turn-off time of 1600ns. With a package style of FLANGE MOUNT and operating temp up to 175°C, it offers efficient performance in various power control systems.

ISOLATED

600 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1600 ns

380 ns