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48 A Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IXSH24N60A by IXYS Corporation

IXSH24N60A

IXYS Corporation

IXYS Corporation's IXSH24N60A is an N-CHANNEL IGBT with 600V VCE, 48A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 150W and operates at up to 150°C. With fast switching times (ton:300ns, toff:925ns), it offers efficient performance in various power control systems.

HIGH SPEED

COLLECTOR

48 A

600 V

SINGLE

500 ns

6.5 V

20 V

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

925 ns

300 ns

2.7 V

IXSH24N60AU1 by IXYS Corporation

IXSH24N60AU1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 48 A; No. of Terminals: 3;

FAST

COLLECTOR

48 A

600 V

SINGLE WITH BUILT-IN DIODE

500 ns

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

925 ns

300 ns

2.7 V

AFGHL25T120RHD by Onsemi

AFGHL25T120RHD

Onsemi

AFGHL25T120RHD by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 48A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, operating temperature range from -55 to 175 °C, and turn-off time of 219ns. The package style is FLANGE MOUNT with a RECTANGULAR shape and THROUGH-HOLE terminals.

COLLECTOR

48 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.3 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

261 W

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

219 ns

43 ns

2.4 V

AFGHL40T120RHD by Onsemi

AFGHL40T120RHD

Onsemi

AFGHL40T120RHD by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 48A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, operating temperature range from -55 to 175 °C, and turn-off time of 230ns. The package style is FLANGE MOUNT with through-hole terminals in a RECTANGULAR shape.

COLLECTOR

48 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.3 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

400 W

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

230 ns

66 ns

2.4 V

AFGHL40T120RLD by Onsemi

AFGHL40T120RLD

Onsemi

AFGHL40T120RLD by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 48A IC, and 529W power dissipation. Ideal for power control applications due to its single configuration with built-in diode. Operates b/w -55 °C to 175°C temperature range.

COLLECTOR

48 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.3 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

529 W

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

276 ns

80 ns

2.1 V

AFGHL25T120RLD by Onsemi

AFGHL25T120RLD

Onsemi

AFGHL25T120RLD by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 48A IC, and 400W Pd. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.

COLLECTOR

48 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.1 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

400 W

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

205 ns

43.2 ns

2 V

NXH50M65L4Q1SG by Onsemi

NXH50M65L4Q1SG

Onsemi

NXH50M65L4Q1SG by Onsemi is an N-CHANNEL IGBT with 650V VCE, 48A IC, and 86W power dissipation. Ideal for POWER CONTROL applications, it features a fast turn-off time of 130ns and a gate-emitter voltage of 20V. Suitable for high-power systems requiring efficient switching capabilities.

ISOLATED

48 A

650 V

COMPLEX

5.2 V

20 V

R-XUFM-X27

6

27

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

86 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

130 ns

39 ns

2.22 V