Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSM75GD120DN2BOSA1
Infineon Technologies
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 103 A; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 100 ns;
ISOLATED
103 A
1200 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X39
6
39
150 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
Not Qualified
NO
UPPER
SILICON
520 ns
100 ns
BSM100GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
130 A
600 V
180 ns
36 ns
BSM15GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Nominal Turn Off Time (toff): 470 ns; Terminal Position: UPPER;
25 A
R-XUFM-X17
17
470 ns
BSM15GD120DN2E3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
BSM50GD120DN2BOSA1
Infineon's BSM50GD120DN2BOSA1 is a N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 72A, and turn off time of 450ns. Ideal for high-power applications like motor drives and inverters due to its fast switching capabilities.
72 A
450 ns
BSM25GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; No. of Terminals: 17; Maximum Operating Temperature: 150 Cel;
35 A
140 ns
BSM25GD120DN2E3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;
BSM35GD120DLCE3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified; No. of Elements: 6;
70 A
370 ns
110 ns
BSM15GD120DLCE3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Transistor Element Material: SILICON; Package Body Material: UNSPECIFIED;
390 ns
130 ns
BSM10GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Elements: 6; Package Shape: RECTANGULAR;
15 A
460 ns
105 ns
BSM50GD120DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 85 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 1200 V;
85 A
BSM50GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified; Package Shape: RECTANGULAR;
151 ns
52 ns
BSM35GD120DN2E3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT; No. of Elements: 6;
50 A
120 ns
BSM75GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 95 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;
95 A
205 ns
90 ns
BSM30GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 39 ns;
40 A
NOT SPECIFIED
103 ns
39 ns
BSM100GD120DLCBOSA1
Infineon's BSM100GD120DLCBOSA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current of 160A, and turn-off time of 480ns. Ideal for high-power applications requiring fast switching such as motor drives and inverters.
160 A
480 ns
BSM75GD120DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 125 A; Nominal Turn On Time (ton): 110 ns; Package Style (Meter): FLANGE MOUNT;
125 A
e3
MATTE TIN
420 ns
FS75R12KS4BOSA1
Infineon FS75R12KS4BOSA1 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. Features include 1200V max collector-emitter voltage, 100A max collector current, and 390ns turn off time. Ideal for high-power applications requiring fast switching such as motor drives and inverters.
100 A
190 ns
BSM100GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Terminal Form: THROUGH-HOLE; Maximum Collector-Emitter Voltage: 1200 V;
150 A
R-XUFM-T39
THROUGH-HOLE
POWER CONTROL
240 ns
BSM200GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 226 A; Qualification: Not Qualified; Transistor Element Material: SILICON;
226 A
R-XUFM-X19
19
326 ns
229 ns
BSM50GD170DLBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; JESD-30 Code: R-XUFM-X21; Package Style (Meter): FLANGE MOUNT;
1700 V
R-XUFM-X21
21
930 ns
200 ns
FS100R12KS4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; JESD-30 Code: R-XUFM-X39; No. of Terminals: 39;
FS100R12KT4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON;
R-XUFM-X25
25
490 ns
185 ns
FS10R12VT3BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 16 A; No. of Terminals: 11; JESD-30 Code: R-XUFM-X11;
16 A
R-XUFM-X11
11
540 ns
62 ns
FS15R12VT3BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 24 A; Transistor Element Material: SILICON; Terminal Position: UPPER;
24 A
590 ns
72 ns
FS100R12KT4B11BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Gate-Emitter Voltage: 20 V; Minimum Operating Temperature: -40 Cel;
6.4 V
20 V
-40 Cel
515 W
2.1 V
FS50R17KE3B17BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 82 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
82 A
UL APPROVED
1100 ns
STG3P2M10N60B
STMicroelectronics
STG3P2M10N60B from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.5V, supports up to 600V, and has a nominal turn-off time of just 99ns. Ideal for high-performance applications in industrial drives and renewable energy systems.
19 A
R-XUFM-X16
16
56 W
Insulated Gate BIP Transistors
99 ns
27 ns
2.5 V
MWI100-12E8
IXYS Corporation
IXYS Corporation's MWI100-12E8 is an N-CHANNEL IGBT bridge with 6 elements and built-in diode, ideal for power control applications. It features a max VCEsat of 2.5V, can handle up to 165A collector current, and has a max operating temperature of 150°C. This UL RECOGNIZED device offers fast turn-off time (795ns) and high power dissipation (640W), making it suitable for demanding industrial environments.
165 A
640 W
UL RECOGNIZED
TIN OVER NICKEL
795 ns
345 ns
FS150R12KT4B9BOSA1
FS150R12KT4B9BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max voltage of 1200V, turn off time of 525ns, and turn on time of 196ns. Ideal for power control applications due to its isolated case connection and silicon material composition.
R-XUFM-X33
33
525 ns
196 ns
FS100R12KT4PBPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Terminal Form: UNSPECIFIED; Package Body Material: UNSPECIFIED;
FS75R12KE3B9BOSA1
FS75R12KE3B9BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 105A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
105 A
R-XUFM-X26
26
175 Cel
610 ns
340 ns
A2C25S12M3
A2C25S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.45V, 1200V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. Its robust design includes a bridge configuration with built-in diodes.
7 V
R-XUFM-X35
35
PLASTIC/EPOXY
197 W
MOTOR CONTROL
338 ns
125.2 ns
2.45 V
A2C35S12M3
A2C35S12M3 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency power management in industrial systems.
250 W
364 ns
170 ns
FS100R12KT4PB11BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;
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