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WIDE BAND LOW POWER RF & Microwave Amplifiers 233

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
ADL7003CHIPS-SX by Analog Devices

ADL7003CHIPS-SX

Analog Devices

ADL7003CHIPS-SX by Analog Devices is a wide band low power RF amplifier with 11 dB gain, operating from 50-95 GHz. It can handle up to 15 dBm CW input power and operates in temperatures ranging from -55°C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

11 dB

15 dBm

95000 MHz

50000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

ADL7003CHIPS by Analog Devices

ADL7003CHIPS

Analog Devices

ADL7003CHIPS by Analog Devices is a wide band low power RF amplifier with 11 dB gain. It operates b/w 50-95 GHz, handling up to 15 dBm CW input power. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

11 dB

15 dBm

95000 MHz

50000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8325-SX by Analog Devices

HMC8325-SX

Analog Devices

Analog Devices' HMC8325-SX is a PHEMT RF amplifier with 22 terminals, operating from 71-86 GHz. It offers a gain of 19.5 dB and requires a 3V power supply, drawing a max current of 50 mA. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

19.5 dB

SURFACE MOUNT

1

22

86000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3

WIDE BAND LOW POWER

50 mA

PHEMT

HMC8325 by Analog Devices

HMC8325

Analog Devices

HMC8325 by Analog Devices is a PHEMT RF amplifier with 19.5 dB gain, operating b/w 71-86 GHz. It has 22 terminals, requires 3V power supply at max current of 50 mA. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount construction and characteristic impedance of 50 ohms.

50 ohm

COMPONENT

19.5 dB

SURFACE MOUNT

1

22

86000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3

WIDE BAND LOW POWER

50 mA

PHEMT

BGA614E6327HTSA1 by Infineon Technologies

BGA614E6327HTSA1

Infineon Technologies

WIDE BAND LOW POWER; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -65 Cel; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

17.5 dB

10 dBm

2400 MHz

0 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

HMC1049-SX by Analog Devices

HMC1049-SX

Analog Devices

Analog Devices' HMC1049-SX is a wide band low power RF amplifier with 11 dB gain and 18 dBm CW input power. Operating from 300 MHz to 20 GHz, it's ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. Temperature range: -55 °C to +85°C.

50 ohm

COMPONENT

11 dB

18 dBm

20000 MHz

300 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC565LC5TR-R5 by Analog Devices

HMC565LC5TR-R5

Analog Devices

Analog Devices' HMC565LC5TR-R5 is a wide band low power RF amplifier with 16 dB gain, operating from 6-20 GHz. It can handle up to 10 dBm CW input power and operates b/w -40°C to +85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

16 dB

10 dBm

20000 MHz

6000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC788ACPSZ-EP-PT by Analog Devices

HMC788ACPSZ-EP-PT

Analog Devices

Analog Devices' HMC788ACPSZ-EP-PT is a wide band low power RF amplifier with 9 dB gain, 10-10000 MHz frequency range, and 20 dBm CW input power. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 to 105°C.

50 ohm

COMPONENT

9 dB

20 dBm

e4

10000 MHz

10 MHz

105 Cel

-55 Cel

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

HMC788ACPSZ-EP-R7 by Analog Devices

HMC788ACPSZ-EP-R7

Analog Devices

Analog Devices' HMC788ACPSZ-EP-R7 is a wide band low power RF amplifier with 9 dB gain and 20 dBm CW input power. It operates from 10 MHz to 10 GHz, suitable for RF applications requiring high performance in extreme temperatures (-55 °C to 105°C).

50 ohm

COMPONENT

9 dB

20 dBm

e4

10000 MHz

10 MHz

105 Cel

-55 Cel

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

HMC902-SX by Analog Devices

HMC902-SX

Analog Devices

Analog Devices' HMC902-SX is a wide band low power RF amplifier with 17 dB gain, operating from 5-11 GHz. With a max input power of 10 dBm and temperature range of -55 to 85 °C, it's ideal for RF & microwave applications requiring high performance in harsh environments.

50 ohm

COMPONENT

17 dB

10 dBm

11000 MHz

5000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1126-SX by Analog Devices

HMC1126-SX

Analog Devices

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 22 dBm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;

50 ohm

COMPONENT

8 dB

22 dBm

50000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC564LC4TR-R5 by Analog Devices

HMC564LC4TR-R5

Analog Devices

Analog Devices' HMC564LC4TR-R5 is a wide band low power RF amplifier with 14 dB gain and 20 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 7-14 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

14 dB

20 dBm

14000 MHz

7000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC606LC5TR-R5 by Analog Devices

HMC606LC5TR-R5

Analog Devices

Analog Devices' HMC606LC5TR-R5 is a wide band low power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 2-18 GHz. It can handle up to 15 dBm CW input power and operates in temperatures from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

9.5 dB

15 dBm

18000 MHz

2000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC903-SX by Analog Devices

HMC903-SX

Analog Devices

Analog Devices' HMC903-SX is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 6-18 GHz, handles up to 20 dBm CW input power, and can be used in various RF & microwave applications.

50 ohm

COMPONENT

17 dB

20 dBm

18000 MHz

6000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

MAAL-011129-TR3000 by M/a-com Technology Solutions

MAAL-011129-TR3000

M/a-com Technology Solutions

MAAL-011129-TR3000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 20 dB gain. It operates b/w 18-31.5 GHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperature range of -40 to 85°C.

50 ohm

COMPONENT

20 dB

10 dBm

e3

31500 MHz

18000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

Matte Tin (Sn)

HMC1040CHIPS by Analog Devices

HMC1040CHIPS

Analog Devices

Analog Devices' HMC1040CHIPS is a wide band low power RF amplifier with 19 dB gain, suitable for frequencies ranging from 20-44 GHz. It can handle up to 5 dBm CW input power and operates in temperatures from -55 to 85°C. Ideal for RF and microwave applications requiring high performance amplification.

50 ohm

COMPONENT

19 dB

5 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

BGU8062J by NXP Semiconductors

BGU8062J

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

20 dBm

e4

SURFACE MOUNT

1

10

2700 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC10,.12SQ,20

5

WIDE BAND LOW POWER

IEC-60134

85 mA

NICKEL PALLADIUM GOLD

1.43

BGU8051,118 by NXP Semiconductors

BGU8051,118

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 20 dBm;

50 ohm

COMPONENT

17 dB

20 dBm

SURFACE MOUNT

1

8

1500 MHz

300 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND LOW POWER

60 mA

1.07

HMC1049SCPZ-EP-R7 by Analog Devices

HMC1049SCPZ-EP-R7

Analog Devices

Analog Devices' HMC1049SCPZ-EP-R7 is a wide band low power RF amplifier with 10 dB gain and 18 dBm CW input power. Operating from -55 °C to 105°C, it covers frequencies from 300 MHz to 20 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

10 dB

18 dBm

20000 MHz

300 MHz

105 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1022A-SX by Analog Devices

HMC1022A-SX

Analog Devices

Analog Devices' HMC1022A-SX is a wide band low power RF amplifier with 11.5 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 0 MHz to 48 GHz. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

11.5 dB

22 dBm

48000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1022ACHIPS by Analog Devices

HMC1022ACHIPS

Analog Devices

Analog Devices' HMC1022ACHIPS is a wide band low power RF amplifier with 11.5 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 0 MHz to 48 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

11.5 dB

22 dBm

48000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

MAAL-011129-TR1000 by M/a-com Technology Solutions

MAAL-011129-TR1000

M/a-com Technology Solutions

MAAL-011129-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 20 dB gain. It operates b/w 18-31.5 GHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

20 dB

10 dBm

e3

31500 MHz

18000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

Matte Tin (Sn)

ADL8111ACCZN by Analog Devices

ADL8111ACCZN

Analog Devices

ADL8111ACCZN by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

10.6 dB

20 dBm

8000 MHz

10 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC8411TCPZ-EP-PT by Analog Devices

HMC8411TCPZ-EP-PT

Analog Devices

Analog Devices' HMC8411TCPZ-EP-PT is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from -55 to 125 °C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

11 dB

20 dBm

10000 MHz

10 MHz

125 Cel

-55 Cel

WIDE BAND LOW POWER

HMC441LC3BTR-R5 by Analog Devices

HMC441LC3BTR-R5

Analog Devices

Analog Devices' HMC441LC3BTR-R5 is a wide band low power RF amplifier with 10 dB gain and 15 dBm max input power. Operating from 6-18 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

10 dB

15 dBm

e4

18000 MHz

6000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

GOLD OVER NICKEL

MAAM-011252-DIE by M/a-com Technology Solutions

MAAM-011252-DIE

M/a-com Technology Solutions

MAAM-011252-DIE by M/a-com Technology Solutions is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 30 MHz to 8000 MHz, handling up to 24 dBm CW input power. Ideal for RF & microwave applications requiring high performance in compact designs.

50 ohm

COMPONENT

18 dB

24 dBm

SURFACE MOUNT

1

8

8000 MHz

30 MHz

85 Cel

-40 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

75 mA

1.67

ADL9005ACPZN-R7 by Analog Devices

ADL9005ACPZN-R7

Analog Devices

ADL9005ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 1.49 VSWR. Operating from 10 MHz to 26.5 GHz, it has a max input power of 22 dBm and operates on a 5V supply. Ideal for RF and microwave applications requiring high performance in a compact surface mount package.

50 ohm

COMPONENT

17 dB

22 dBm

SURFACE MOUNT

1

24

26500 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

PHEMT

1.49

HMC717ALP3ETR by Analog Devices

HMC717ALP3ETR

Analog Devices

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

50 ohm

COMPONENT

11 dB

20 dBm

e3

SURFACE MOUNT

1

16

6000 MHz

4800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.12SQ,20

3/5

WIDE BAND LOW POWER

100 mA

PHEMT

Matte Tin (Sn) - annealed

1.43

F1429MBNELI8 by Renesas Electronics

F1429MBNELI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Equivalence Code: LCC12,.08SQ,20; Gain: 18 dB; Construction: COMPONENT;

LOW NOISE

100 ohm

COMPONENT

18 dB

20 dBm

SURFACE MOUNT

1

12

4200 MHz

3000 MHz

115 Cel

-40 Cel

LCC12,.08SQ,20

3.3/5

WIDE BAND LOW POWER

86 mA

1.1

F6922AVRI8 by Renesas Electronics

F6922AVRI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 21200 MHz; Minimum Operating Frequency: 17700 MHz;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

21200 MHz

17700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6922AVRI by Renesas Electronics

F6922AVRI

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; No. of Functions: 2; JESD-609 Code: e3;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

21200 MHz

17700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6923AVRI8 by Renesas Electronics

F6923AVRI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

17000 MHz

14000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6923AVRI by Renesas Electronics

F6923AVRI

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

17000 MHz

14000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

UPC2710TB-A by Renesas Electronics

UPC2710TB-A

Renesas Electronics

Renesas Electronics UPC2710TB-A is a wide band low power RF amplifier with 33 dB gain, operating up to 1000 MHz. It has a max input power of 10 dBm and VSWR of 1.67, suitable for RF applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

33 dB

10 dBm

SURFACE MOUNT

1

6

1000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

29 mA

BIPOLAR

1.67

ADL8107ACPZN by Analog Devices

ADL8107ACPZN

Analog Devices

ADL8107ACPZN by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating frequency range of 6-18 GHz, and max input power of 22 dBm. Ideal for wideband low-power applications in RF and microwave systems due to its high performance and compact surface-mount construction.

50 ohm

COMPONENT

18 dB

22 dBm

SURFACE MOUNT

1

8

18000 MHz

6000 MHz

85 Cel

-40 Cel

SOLCC8,.08,20

5

WIDE BAND LOW POWER

PHEMT

1.54

TRF1208RPVR by Texas Instruments

TRF1208RPVR

Texas Instruments

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Gain: 16 dB;

100 ohm

COMPONENT

16 dB

20 dBm

e4

SURFACE MOUNT

1

12

11000 MHz

10 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND LOW POWER

BICMOS

NICKEL PALLADIUM GOLD

HMC462-SX by Analog Devices

HMC462-SX

Analog Devices

HMC462-SX by Analog Devices is a PHEMT technology RF amplifier with 12.5 dB gain, operating from 2-20 GHz. It has a max input power of 18 dBm and VSWR of 1.25, making it ideal for wideband low-power applications in RF and microwave systems. With a compact surface-mount construction and requiring only 5V supply voltage, it offers high performance in a small form factor.

50 ohm

COMPONENT

12.5 dB

18 dBm

SURFACE MOUNT

1

3

20000 MHz

2000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

84 mA

PHEMT

1.25

HMC963LC4TR-R5 by Analog Devices

HMC963LC4TR-R5

Analog Devices

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.

50 ohm

COMPONENT

16.5 dB

0 dBm

e4

SURFACE MOUNT

1

24

26500 MHz

6000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

3.5

WIDE BAND LOW POWER

65 mA

PHEMT

Gold (Au) - with Nickel (Ni) barrier

1.92

TRF1208RPVT by Texas Instruments

TRF1208RPVT

Texas Instruments

TRF1208RPVT by Texas Instruments is a BICMOS RF amplifier with 16dB gain, operating from 10MHz to 11GHz. It has a max input power of 20dBm and operates on a 3.3V power supply. Ideal for wideband low-power applications requiring surface mounting in temperatures ranging from -40°C to 105°C.

100 ohm

COMPONENT

16 dB

20 dBm

e4

SURFACE MOUNT

1

12

11000 MHz

10 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND LOW POWER

BICMOS

Nickel/Palladium/Gold (Ni/Pd/Au)

CMX90B702QF-R705 by Cml Microcircuits

CMX90B702QF-R705

Cml Microcircuits

WIDE BAND LOW POWER;

WIDE BAND LOW POWER

CMX90B702QF-R710 by Cml Microcircuits

CMX90B702QF-R710

Cml Microcircuits

WIDE BAND LOW POWER;

WIDE BAND LOW POWER