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WIDE BAND LOW POWER RF & Microwave Amplifiers 233

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
AMMP-6233-BLKG by Broadcom

AMMP-6233-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Minimum Operating Frequency: 18000 MHz;

50 ohm

COMPONENT

20 dB

10 dBm

SURFACE MOUNT

1

8

32000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8(UNSPEC)

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

90 mA

AMMP-6233-TR1G by Broadcom

AMMP-6233-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 90 mA;

50 ohm

COMPONENT

20 dB

10 dBm

SURFACE MOUNT

1

8

32000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8(UNSPEC)

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

90 mA

AMMP-6233-TR2G by Broadcom

AMMP-6233-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Maximum Supply Current: 90 mA; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

20 dB

10 dBm

SURFACE MOUNT

1

8

32000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8(UNSPEC)

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

90 mA

HMC1040CHIPS-SX by Analog Devices

HMC1040CHIPS-SX

Analog Devices

HMC1040CHIPS-SX by Analog Devices is a wide band low power RF amplifier with a gain of 19 dB. It operates in a frequency range of 20-44 GHz and can handle max input power of 5 dBm. This component is suitable for applications requiring RF amplification in the microwave frequency range.

50 ohm

COMPONENT

19 dB

5 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

ADL8111ACCZN-R7 by Analog Devices

ADL8111ACCZN-R7

Analog Devices

ADL8111ACCZN-R7 by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power and operates b/w -40 °C to 85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.

50 ohm

COMPONENT

10.6 dB

20 dBm

8000 MHz

10 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC8411TCPZ-EP-R7 by Analog Devices

HMC8411TCPZ-EP-R7

Analog Devices

Analog Devices' HMC8411TCPZ-EP-R7 is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in extreme temperatures (-55 °C to 125°C).

50 ohm

COMPONENT

11 dB

20 dBm

10000 MHz

10 MHz

125 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8412LP2FETR by Analog Devices

HMC8412LP2FETR

Analog Devices

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

12 dB

25 dBm

e4

SURFACE MOUNT

1

6

11000 MHz

400 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

1.375

HMC8412LP2FE by Analog Devices

HMC8412LP2FE

Analog Devices

Analog Devices' HMC8412LP2FE is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for surface mount applications in RF & microwave systems.

50 ohm

COMPONENT

12 dB

25 dBm

e4

SURFACE MOUNT

1

6

11000 MHz

400 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

1.375

ADL8121ACPZN by Analog Devices

ADL8121ACPZN

Analog Devices

ADL8121ACPZN by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications in the RF & microwave field, it operates from -40°C to 85°C with a frequency range of 25MHz to 12GHz.

50 ohm

COMPONENT

15 dB

32 dBm

SURFACE MOUNT

1

6

12000 MHz

25 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

PHEMT

1.43

ADL8121ACPZN-R7 by Analog Devices

ADL8121ACPZN-R7

Analog Devices

ADL8121ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications from 25MHz to 12GHz, it operates b/w -40°C to +85°C with a characteristic impedance of 50Ω. Suitable for surface mount installations with a 5V power supply requirement.

50 ohm

COMPONENT

15 dB

32 dBm

SURFACE MOUNT

1

6

12000 MHz

25 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

PHEMT

1.43

ADL8142ACPZN by Analog Devices

ADL8142ACPZN

Analog Devices

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.

50 ohm

COMPONENT

24.5 dB

20 dBm

SURFACE MOUNT

1

8

31000 MHz

23000 MHz

85 Cel

-40 Cel

SOLCC8,.08,20

2

WIDE BAND LOW POWER

PHEMT

1.38

ADL8142ACPZN-R7 by Analog Devices

ADL8142ACPZN-R7

Analog Devices

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.

50 ohm

COMPONENT

24.5 dB

20 dBm

SURFACE MOUNT

1

8

31000 MHz

23000 MHz

85 Cel

-40 Cel

SOLCC8,.08,20

2

WIDE BAND LOW POWER

PHEMT

1.38

BGA461E6327XTSA1 by Infineon Technologies

BGA461E6327XTSA1

Infineon Technologies

WIDE BAND LOW POWER; Construction: COMPONENT; Gain: 19.5 dB; Maximum Input Power (CW): 10 dBm; Minimum Operating Temperature: -30 Cel; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

19.5 dB

10 dBm

85 Cel

-30 Cel

WIDE BAND LOW POWER

BGA616E6327HTSA1 by Infineon Technologies

BGA616E6327HTSA1

Infineon Technologies

WIDE BAND LOW POWER; Gain: 18 dB; Maximum Operating Frequency: 2700 MHz; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -65 Cel; Minimum Operating Frequency: 0 MHz;

50 ohm

COMPONENT

18 dB

10 dBm

2700 MHz

0 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

BGA628L7E6327XTMA1 by Infineon Technologies

BGA628L7E6327XTMA1

Infineon Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -65 Cel; Maximum Operating Temperature: 150 Cel; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz;

50 ohm

COMPONENT

10 dB

6 dBm

6000 MHz

400 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

HMC1126 by Analog Devices

HMC1126

Analog Devices

Analog Devices' HMC1126 is a wide band low power RF amplifier with 8 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 2 GHz to 50 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

8 dB

22 dBm

50000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1127 by Analog Devices

HMC1127

Analog Devices

Analog Devices' HMC1127 is a wide band low power RF amplifier with 11.5 dB gain and 22 dBm max input power. Operating from 2-50 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

11.5 dB

22 dBm

50000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1131LC4TR by Analog Devices

HMC1131LC4TR

Analog Devices

HMC1131LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain, operating from 24 to 35 GHz. It has a max input power of 12 dBm and operates on a 5V power supply. This ceramic-packaged component is ideal for RF and microwave applications requiring high frequency amplification in the -40 to +85°C temperature range.

50 ohm

COMPONENT

22 dB

12 dBm

e4

SURFACE MOUNT

1

24

35000 MHz

24000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

GAAS

GOLD NICKEL

HMC1131LC4 by Analog Devices

HMC1131LC4

Analog Devices

HMC1131LC4 by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 24 to 35 GHz, handling up to 12 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.

50 ohm

COMPONENT

22 dB

12 dBm

e4

SURFACE MOUNT

1

24

35000 MHz

24000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

GAAS

GOLD NICKEL

HMC1144 by Analog Devices

HMC1144

Analog Devices

Analog Devices' HMC1144 is a wide band low power RF amplifier with 17 dB gain, operating from 35-70 GHz. It can handle up to 22 dBm CW input power and operates b/w -55°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.

50 ohm

COMPONENT

17 dB

22 dBm

70000 MHz

35000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

UPC2746TB-E3-A by Renesas Electronics

UPC2746TB-E3-A

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

10 mA

BIPOLAR

HMC-AUH312-SX by Analog Devices

HMC-AUH312-SX

Analog Devices

Analog Devices' HMC-AUH312-SX is a wide band low power RF amplifier with 8 dB gain and 10 dBm CW input power. Operating from 500 MHz to 80 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55°C to 85°C.

50 ohm

COMPONENT

8 dB

10 dBm

80000 MHz

500 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC5805ALS6 by Analog Devices

HMC5805ALS6

Analog Devices

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.

50 ohm

COMPONENT

9 dB

22 dBm

e4

40000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

GOLD OVER NICKEL

HMC8400 by Analog Devices

HMC8400

Analog Devices

Analog Devices' HMC8400 is a wide band low power RF amplifier with 11.5 dB gain, handling up to 23 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 2 GHz to 30 GHz. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

11.5 dB

23 dBm

30000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8120-SX by Analog Devices

HMC8120-SX

Analog Devices

HMC8120-SX by Analog Devices is a wide band low power RF amplifier with 19 dB gain. Operating frequency range from 71-76 GHz, ideal for high-frequency applications. Features PHEMT technology, 50 ohm impedance, and surface mounting for easy integration.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

28

76000 MHz

71000 MHz

85 Cel

-55 Cel

4

WIDE BAND LOW POWER

250 mA

PHEMT

HMC8120 by Analog Devices

HMC8120

Analog Devices

HMC8120 by Analog Devices is a PHEMT RF amplifier with 19 dB gain, operating b/w 71-76 GHz. It features 28 terminals, 50 ohm impedance, and consumes up to 250 mA at 4 V. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

28

76000 MHz

71000 MHz

85 Cel

-55 Cel

4

WIDE BAND LOW POWER

250 mA

PHEMT

HMC-C582 by Analog Devices

HMC-C582

Analog Devices

HMC-C582 by Analog Devices is a PHEMT RF amplifier with 16 dB gain, operating from 10 MHz to 20 GHz. It has a max input power of 23 dBm and requires a 15V power supply. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

16 dB

23 dBm

1

4

20000 MHz

10 MHz

75 Cel

-40 Cel

MODULE,4LEAD(UNSPEC)

15

WIDE BAND LOW POWER

900 mA

PHEMT

ADL5723ACPZN-R7 by Analog Devices

ADL5723ACPZN-R7

Analog Devices

ADL5723ACPZN-R7 by Analog Devices is a RF amplifier with 24.1 dB gain, operating frequency range of 10.1-11.7 GHz, and characteristic impedance of 100 ohm. It is designed for wide band low power applications in RF & Microwave systems requiring surface mounting feature.

100 ohm

COMPONENT

24.1 dB

SURFACE MOUNT

1

8

11700 MHz

10100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

1.8,3.3

WIDE BAND LOW POWER

BIPOLAR

ADL5726ACPZN-R7 by Analog Devices

ADL5726ACPZN-R7

Analog Devices

ADL5726ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with gain of 22.5 dB. It operates b/w 21.2-23.6 GHz, suitable for RF & Microwave applications requiring surface mount package and 100 ohm impedance.

100 ohm

COMPONENT

22.5 dB

SURFACE MOUNT

1

8

23600 MHz

21200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

1.8,3.3

WIDE BAND LOW POWER

HMC392ALC4 by Analog Devices

HMC392ALC4

Analog Devices

HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.

HIGH RELIABILITY

50 ohm

COMPONENT

14.5 dB

20 dBm

e4

SURFACE MOUNT

1

24

8000 MHz

3500 MHz

85 Cel

-40 Cel

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

75 mA

GAAS

GOLD NICKEL

HMC392A by Analog Devices

HMC392A

Analog Devices

Analog Devices' HMC392A is a GAAS RF amplifier with 14.5 dB gain, operating from 3.5 to 7 GHz. It has a max input power of 20 dBm and requires a 5V supply, drawing up to 75 mA. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

14.5 dB

20 dBm

SURFACE MOUNT

1

10

7000 MHz

3500 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

75 mA

GAAS

HMC8121-SX by Analog Devices

HMC8121-SX

Analog Devices

Analog Devices' HMC8121-SX is a PHEMT RF amplifier with 19 dB gain, operating b/w 81-86 GHz. Ideal for wide band low power applications, it has a characteristic impedance of 50 ohm and operates from -55 to 85 °C. Suitable for surface mount construction with a 5V power supply requirement.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

PHEMT

HMC8121 by Analog Devices

HMC8121

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; Technology: PHEMT; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Temperature: -55 Cel;

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

PHEMT

HMC8410LP2FE by Analog Devices

HMC8410LP2FE

Analog Devices

Analog Devices' HMC8410LP2FE is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF applications requiring high performance in temperature range of -40°C to 85°C.

50 ohm

COMPONENT

13 dB

20 dBm

e4

10000 MHz

10 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

HMC589AST89E by Analog Devices

HMC589AST89E

Analog Devices

Analog Devices' HMC589AST89E is a wide band low power RF amplifier with 13 dB gain and 8 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 0 to 4000 MHz. Ideal for RF & microwave applications requiring high performance in a compact form factor.

50 ohm

COMPONENT

13 dB

8 dBm

e3

4000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

MATTE TIN

HMC8401-SX by Analog Devices

HMC8401-SX

Analog Devices

HMC8401-SX by Analog Devices is a PHEMT RF amplifier with 12.5 dB gain, operating from 10 MHz to 28 GHz. It has a max input power of 20 dBm and requires a 7.5 V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

12.5 dB

20 dBm

SURFACE MOUNT

1

8

28000 MHz

10 MHz

85 Cel

-55 Cel

DIE OR CHIP

7.5

WIDE BAND LOW POWER

60 mA

PHEMT

HMC8401 by Analog Devices

HMC8401

Analog Devices

HMC8401 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 7.5V supply, and 12.5dB gain. Utilizes PHEMT tech for wide band low power applications from 10MHz to 28GHz. With surface mount feature, it operates b/w -55°C to 85°C temperature range.

50 ohm

COMPONENT

12.5 dB

20 dBm

SURFACE MOUNT

1

8

28000 MHz

10 MHz

85 Cel

-55 Cel

DIE OR CHIP

7.5

WIDE BAND LOW POWER

60 mA

PHEMT

HMC717ALP3E by Analog Devices

HMC717ALP3E

Analog Devices

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.

50 ohm

COMPONENT

11 dB

20 dBm

e3

SURFACE MOUNT

1

16

6000 MHz

4800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

WIDE BAND LOW POWER

100 mA

PHEMT

MATTE TIN

1.43

HMC1144-SX by Analog Devices

HMC1144-SX

Analog Devices

Analog Devices' HMC1144-SX is a wide band low power RF amplifier with 17 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 35 GHz to 70 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

17 dB

22 dBm

70000 MHz

35000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8400-SX by Analog Devices

HMC8400-SX

Analog Devices

Analog Devices' HMC8400-SX is a wide band low power RF amplifier with 11.5 dB gain, handling up to 23 dBm CW input power. Operating from 2-30 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 °C to 85°C.

50 ohm

COMPONENT

11.5 dB

23 dBm

30000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8402-SX by Analog Devices

HMC8402-SX

Analog Devices

Analog Devices' HMC8402-SX is a wide band low power RF amplifier with 11 dB gain, handling up to 20 dBm CW input power. Operating from -55 °C to 85°C, it spans frequencies from 2-30 GHz. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

11 dB

20 dBm

30000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8402 by Analog Devices

HMC8402

Analog Devices

Analog Devices' HMC8402 is a wide band low power RF amplifier with 11 dB gain, operating from 2-30 GHz. It can handle up to 20 dBm CW input power and operates b/w -55 °C to +85°C. Ideal for RF & microwave applications requiring high performance in a compact component.

50 ohm

COMPONENT

11 dB

20 dBm

30000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8410CHIPS-SX by Analog Devices

HMC8410CHIPS-SX

Analog Devices

Analog Devices' HMC8410CHIPS-SX is a wide band low power RF amplifier with 13 dB gain and 20 dBm max input power. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55°C to 85°C.

50 ohm

COMPONENT

13 dB

20 dBm

10000 MHz

10 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8410CHIPS by Analog Devices

HMC8410CHIPS

Analog Devices

Analog Devices' HMC8410CHIPS is a wide band low power RF amplifier with 13 dB gain and 20 dBm CW input power. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 °C to 85°C.

50 ohm

COMPONENT

13 dB

20 dBm

10000 MHz

10 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC7950LS6TR by Analog Devices

HMC7950LS6TR

Analog Devices

Analog Devices' HMC7950LS6TR is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.

50 ohm

COMPONENT

13 dB

20 dBm

28000 MHz

2000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

TUNGSTEN NICKEL GOLD

HMC7950LS6 by Analog Devices

HMC7950LS6

Analog Devices

Analog Devices' HMC7950LS6 is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.

50 ohm

COMPONENT

13 dB

20 dBm

28000 MHz

2000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

TUNGSTEN NICKEL GOLD

HMC5805ALS6TR by Analog Devices

HMC5805ALS6TR

Analog Devices

Analog Devices' HMC5805ALS6TR is a wide band low power RF amplifier with 9 dB gain and 22 dBm max input power. Operating from -40 to 85°C, it covers frequencies up to 40 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.

50 ohm

COMPONENT

9 dB

22 dBm

e4

40000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

GOLD OVER NICKEL

HMC5805LS6TR by Analog Devices

HMC5805LS6TR

Analog Devices

Analog Devices' HMC5805LS6TR is a GAAS RF amplifier with 13.5 dB gain, operating up to 40 GHz. With a max input power of 17 dBm and VSWR of 7, it's ideal for wideband low-power applications in RF & microwave systems requiring high-frequency amplification. The ceramic package and surface-mounting feature make it suitable for various environments, from -40 °C to 85°C.

50 ohm

COMPONENT

13.5 dB

17 dBm

SURFACE MOUNT

1

16

40000 MHz

85 Cel

-40 Cel

CERAMIC

LCC16,.24SQ,40/32

10

WIDE BAND LOW POWER

GAAS

7