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WIDE BAND LOW POWER RF & Microwave Amplifiers 233

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
BGM1013,115 by NXP Semiconductors

BGM1013,115

NXP Semiconductors

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.

LOW NOISE

50 ohm

COMPONENT

24 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

33 mA

BIPOLAR

Tin (Sn)

BGM1012,115 by NXP Semiconductors

BGM1012,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

50 ohm

COMPONENT

16 dB

10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

19 mA

BIPOLAR

Tin (Sn)

BGM1011,115 by NXP Semiconductors

BGM1011,115

NXP Semiconductors

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; JESD-609 Code: e3; Gain: 28 dB; Construction: COMPONENT; Terminal Finish: Tin (Sn);

50 ohm

COMPONENT

28 dB

e3

WIDE BAND LOW POWER

Tin (Sn)

BGA2717,115 by NXP Semiconductors

BGA2717,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; Gain: 20 dB;

50 ohm

COMPONENT

20 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

10 mA

Tin (Sn)

BGA2716,115 by NXP Semiconductors

BGA2716,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

50 ohm

COMPONENT

19 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

21 mA

BIPOLAR

Tin (Sn)

BGA2715,115 by NXP Semiconductors

BGA2715,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Gain: 18 dB;

50 ohm

COMPONENT

18 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

Tin (Sn)

BGA2714,115 by NXP Semiconductors

BGA2714,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;

50 ohm

COMPONENT

16 dB

e3

SURFACE MOUNT

1

6

2700 MHz

0 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

5.7 mA

BIPOLAR

Tin (Sn)

BGA2712,115 by NXP Semiconductors

BGA2712,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 100 MHz;

50 ohm

COMPONENT

16 dB

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

15 mA

BIPOLAR

Tin (Sn)

BGA2709,115 by NXP Semiconductors

BGA2709,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 32 mA;

50 ohm

COMPONENT

18 dB

10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

32 mA

BIPOLAR

Tin (Sn)

AVT-50663-BLKG by Broadcom

AVT-50663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

13.8 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

39.5 mA

BIPOLAR

Tin (Sn)

AVT-50663-TR1G by Broadcom

AVT-50663-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

13.8 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

39.5 mA

BIPOLAR

Tin (Sn)

AVT-52663-BLKG by Broadcom

AVT-52663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

13.8 dB

18 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

49 mA

BIPOLAR

Tin (Sn)

AVT-52663-TR1G by Broadcom

AVT-52663-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

13.8 dB

18 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

49 mA

BIPOLAR

Tin (Sn)

MGA-645T6-TR1G by Broadcom

MGA-645T6-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1500 MHz;

LOW NOISE

50 ohm

COMPONENT

13.5 dB

15 dBm

e4

SURFACE MOUNT

1

6

3000 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-645T6-TR2G by Broadcom

MGA-645T6-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

LOW NOISE

50 ohm

COMPONENT

13.5 dB

15 dBm

e4

SURFACE MOUNT

1

6

3000 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Gold (Au) - with Nickel (Ni) barrier

AMMP-6222-TR1G by Broadcom

AMMP-6222-TR1G

Broadcom

AMMP-6222-TR1G by Broadcom is a wide band low power RF amplifier with 23 dB gain. It operates from 7 GHz to 21 GHz, suitable for high-frequency applications. With a max input power of 10 dBm and compact surface mount construction, it is ideal for RF and microwave systems requiring amplification in the 50 ohm impedance range.

LOW NOISE

50 ohm

COMPONENT

23 dB

10 dBm

e4

SURFACE MOUNT

1

8

21000 MHz

7000 MHz

PLASTIC/EPOXY

LCC8(UNSPEC)

4

WIDE BAND LOW POWER

RF/Microwave Amplifiers

160 mA

Nickel/Gold (Ni/Au)

AMF-3F-17701970-45-8P by L-3 Narda-miteq

AMF-3F-17701970-45-8P

L-3 Narda-miteq

AMF-3F-17701970-45-8P by L-3 Narda-miteq is a COAXIAL RF amplifier with 24 dB gain. It operates in the frequency range of 17.7 - 19.7 GHz, making it ideal for wideband low-power applications. With a VSWR of 2, this amplifier ensures efficient signal transmission in RF and microwave systems.

K/SMA

COAXIAL

24 dB

19700 MHz

17700 MHz

WIDE BAND LOW POWER

2

MAX2632EUS-T by Maxim Integrated

MAX2632EUS-T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e0;

LOW NOISE

50 ohm

COMPONENT

11 dB

5 dBm

e0

SURFACE MOUNT

4

1000 MHz

800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-253

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

11 mA

BIPOLAR

Tin/Lead (Sn/Pb)

1.25

MAX2641EUT by Maxim Integrated

MAX2641EUT

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 6.4 mA;

50 ohm

COMPONENT

12.4 dB

5 dBm

e0

SURFACE MOUNT

1

6

2500 MHz

1400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSOP6,.11,37

3/5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

6.4 mA

BIPOLAR

TIN LEAD

MAX2473EUT by Maxim Integrated

MAX2473EUT

Maxim Integrated

WIDE BAND LOW POWER; Construction: COMPONENT; JESD-609 Code: e0; Gain: 6 dB; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2500 MHz;

50 ohm

COMPONENT

6 dB

10 dBm

e0

2500 MHz

500 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

TIN LEAD

MAX2611EUS-T by Maxim Integrated

MAX2611EUS-T

Maxim Integrated

MAX2611EUS-T by Maxim Integrated is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for applications requiring surface mount construction in RF & microwave systems.

LOW NOISE

50 ohm

COMPONENT

17.3 dB

13 dBm

e0

SURFACE MOUNT

1

4

1100 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-253

3.8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

TIN LEAD

1.6

SKY65013-70LF by Skyworks Solutions

SKY65013-70LF

Skyworks Solutions

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 7000 MHz; Gain: 12.5 dB;

50 ohm

COMPONENT

12.5 dB

15 dBm

SURFACE MOUNT

1

3

7000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-243

3.5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

2

SKY65015-92LF by Skyworks Solutions

SKY65015-92LF

Skyworks Solutions

SKY65015-92LF by Skyworks Solutions is a GAAS RF amplifier with 18dB gain, 50 ohm impedance, and 6000 MHz operating frequency. It's used in wideband low-power applications, offering a max input power of 15 dBm and VSWR of 2 for surface mounting at temperatures ranging from -45 to 85°C.

50 ohm

COMPONENT

18 dB

15 dBm

SURFACE MOUNT

1

3

6000 MHz

85 Cel

-45 Cel

PLASTIC/EPOXY

TO-243

4.7

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

2

ALM-GA001-BLKG by Broadcom

ALM-GA001-BLKG

Broadcom

WIDE BAND LOW POWER; Gain: 16.2 dB; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Additional Features: CMOS COMPATIBLE; Minimum Operating Temperature: -40 Cel;

CMOS COMPATIBLE

COMPONENT

16.2 dB

13 dBm

3500 MHz

900 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

ALM-GA001-TR1G by Broadcom

ALM-GA001-TR1G

Broadcom

WIDE BAND LOW POWER; Additional Features: CMOS COMPATIBLE; Minimum Operating Frequency: 900 MHz; Maximum Input Power (CW): 13 dBm; Gain: 16.2 dB; Maximum Operating Temperature: 85 Cel;

CMOS COMPATIBLE

COMPONENT

16.2 dB

13 dBm

3500 MHz

900 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

AD8353ACP-R2 by Analog Devices

AD8353ACP-R2

Analog Devices

AD8353ACP-R2 by Analog Devices is a wide band low power RF amplifier with 15.6 dB gain, operating from 1 MHz to 2700 MHz. It has a max input power of 10 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is housed in a plastic/epoxy package with surface mounting feature.

50 ohm

COMPONENT

15.6 dB

10 dBm

e0

SURFACE MOUNT

1

8

2700 MHz

1 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

52 mA

Tin/Lead (Sn85Pb15)

SMA661ASTR by STMicroelectronics

SMA661ASTR

STMicroelectronics

SMA661ASTR by STMicroelectronics is a wide-band low-power RF amplifier with 18 dB gain, operating b/w -40 °C and 85 °C. It features a 6-terminal surface mount design and requires a power supply of 2.7V. Ideal for RF applications in compact devices.

LOW NOISE

50 ohm

COMPONENT

18 dB

e4

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

FL6,.047,20

2.7

WIDE BAND LOW POWER

RF/Microwave Amplifiers

BICMOS

Nickel/Palladium/Gold (Ni/Pd/Au)

AMMP-6333-BLKG by Broadcom

AMMP-6333-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Minimum Operating Frequency: 18000 MHz;

50 ohm

COMPONENT

18 dB

20 dBm

e4

SURFACE MOUNT

1

8

33000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8,.2SQ,28

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

230 mA

Nickel/Gold (Ni/Au)

AMMP-6333-TR1G by Broadcom

AMMP-6333-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Power Supplies (V): 5;

50 ohm

COMPONENT

18 dB

20 dBm

e4

SURFACE MOUNT

1

8

33000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8,.2SQ,28

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

230 mA

Nickel/Gold (Ni/Au)

AMMP-6333-TR2G by Broadcom

AMMP-6333-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 20 dBm; Package Equivalence Code: LCC8,.2SQ,28;

50 ohm

COMPONENT

18 dB

20 dBm

SURFACE MOUNT

1

8

33000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8,.2SQ,28

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

5 V

AMMP-6421-BLKG by Broadcom

AMMP-6421-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC8,.2SQ,28;

50 ohm

COMPONENT

24 dB

23 dBm

SURFACE MOUNT

1

8

16000 MHz

13000 MHz

PLASTIC/EPOXY

LCC8,.2SQ,28

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

AMMP-6421-TR2G by Broadcom

AMMP-6421-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 16000 MHz;

50 ohm

COMPONENT

24 dB

23 dBm

SURFACE MOUNT

1

8

16000 MHz

13000 MHz

PLASTIC/EPOXY

LCC8,.2SQ,28

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

AVT-51663-BLKG by Broadcom

AVT-51663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

50 ohm

COMPONENT

18 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

40 mA

BIPOLAR

Tin (Sn)

MGA-16516-BLKG by Broadcom

MGA-16516-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1700 MHz;

50 ohm

COMPONENT

15.8 dB

15 dBm

e3

SURFACE MOUNT

2

16

2700 MHz

1700 MHz

PLASTIC/EPOXY

LCC16,.16SQ,25

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Tin (Sn)

MGA-16516-TR1G by Broadcom

MGA-16516-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

50 ohm

COMPONENT

15.8 dB

15 dBm

e3

SURFACE MOUNT

2

16

2700 MHz

1700 MHz

PLASTIC/EPOXY

LCC16,.16SQ,25

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Tin (Sn)

MGA-30889-BLKG by Broadcom

MGA-30889-BLKG

Broadcom

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.

50 ohm

COMPONENT

14.6 dB

20 dBm

e3

SURFACE MOUNT

1

3

2600 MHz

40 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

77 mA

GAAS

Matte Tin (Sn)

MGA-30889-TR1G by Broadcom

MGA-30889-TR1G

Broadcom

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

14.6 dB

20 dBm

e3

SURFACE MOUNT

1

3

2600 MHz

40 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

77 mA

GAAS

Tin (Sn)

MGA-53589-BLKG by Broadcom

MGA-53589-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 13 dBm; JESD-609 Code: e3;

LOW NOISE

50 ohm

COMPONENT

15.3 dB

13 dBm

e3

SURFACE MOUNT

1

3

3000 MHz

50 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

52 mA

Matte Tin (Sn)

MGA-53589-TR1G by Broadcom

MGA-53589-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE; Terminal Finish: Matte Tin (Sn);

LOW NOISE

50 ohm

COMPONENT

15.3 dB

13 dBm

e3

SURFACE MOUNT

1

3

3000 MHz

50 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

52 mA

Matte Tin (Sn)

VMMK-2103-BLKG by Broadcom

VMMK-2103-BLKG

Broadcom

WIDE BAND LOW POWER; Technology: GAAS; Construction: COMPONENT; Maximum Supply Current: 30 mA; Maximum Voltage Standing Wave Ratio: 2; Package Equivalence Code: WAFER;

LOW NOISE

50 ohm

COMPONENT

12 dB

20 dBm

e3

1

6000 MHz

500 MHz

WAFER

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

30 mA

GAAS

Tin (Sn)

2

VMMK-2103-TR1G by Broadcom

VMMK-2103-TR1G

Broadcom

WIDE BAND LOW POWER; Technology: GAAS; Power Supplies (V): 5; Additional Features: LOW NOISE; Minimum Operating Frequency: 500 MHz; Package Equivalence Code: WAFER;

LOW NOISE

50 ohm

COMPONENT

12 dB

20 dBm

e3

1

6000 MHz

500 MHz

WAFER

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

30 mA

GAAS

Tin (Sn)

2

VMMK-2203-BLKG by Broadcom

VMMK-2203-BLKG

Broadcom

Broadcom's VMMK-2203-BLKG is a GAAS technology RF amplifier with 15 dB gain, operating from 900 MHz to 11 GHz. It has a max input power of 13 dBm and requires a 5V power supply, drawing up to 30 mA. Ideal for wideband low-power applications due to its construction as a component with tin terminal finish.

LOW NOISE

50 ohm

COMPONENT

15 dB

13 dBm

e3

1

11000 MHz

900 MHz

WAFER

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

30 mA

GAAS

Tin (Sn)

VMMK-2203-TR1G by Broadcom

VMMK-2203-TR1G

Broadcom

WIDE BAND LOW POWER; Technology: GAAS; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Supply Current: 30 mA; Maximum Operating Frequency: 11000 MHz;

LOW NOISE

50 ohm

COMPONENT

15 dB

13 dBm

e3

1

11000 MHz

900 MHz

WAFER

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

30 mA

GAAS

Tin (Sn)

VMMK-2303-BLKG by Broadcom

VMMK-2303-BLKG

Broadcom

WIDE BAND LOW POWER; Technology: GAAS; No. of Functions: 1; Minimum Operating Frequency: 500 MHz; JESD-609 Code: e3; Gain: 12 dB;

LOW NOISE

50 ohm

COMPONENT

12 dB

13 dBm

e3

1

6000 MHz

500 MHz

WAFER

1.8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

28 mA

GAAS

Tin (Sn)

2

VMMK-2303-TR1G by Broadcom

VMMK-2303-TR1G

Broadcom

WIDE BAND LOW POWER; Technology: GAAS; Additional Features: LOW NOISE; Maximum Supply Current: 28 mA; No. of Functions: 1; JESD-609 Code: e3;

LOW NOISE

50 ohm

COMPONENT

12 dB

13 dBm

e3

1

6000 MHz

500 MHz

WAFER

1.8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

28 mA

GAAS

Tin (Sn)

2

VMMK-2403-BLKG by Broadcom

VMMK-2403-BLKG

Broadcom

WIDE BAND LOW POWER; Technology: GAAS; JESD-609 Code: e3; Maximum Operating Frequency: 4000 MHz; Characteristic Impedance: 50 ohm; Power Supplies (V): 3;

LOW NOISE

50 ohm

COMPONENT

14 dB

20 dBm

e3

1

4000 MHz

2000 MHz

WAFER

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

45 mA

GAAS

Tin (Sn)

VMMK-2403-TR1G by Broadcom

VMMK-2403-TR1G

Broadcom

WIDE BAND LOW POWER; Technology: GAAS; No. of Functions: 1; Additional Features: LOW NOISE; Package Equivalence Code: WAFER; Maximum Operating Frequency: 4000 MHz;

LOW NOISE

50 ohm

COMPONENT

14 dB

20 dBm

e3

1

4000 MHz

2000 MHz

WAFER

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

45 mA

GAAS

Tin (Sn)

VMMK-2503-BLKG by Broadcom

VMMK-2503-BLKG

Broadcom

WIDE BAND LOW POWER; Technology: GAAS; Terminal Finish: Tin (Sn); Maximum Input Power (CW): 20 dBm; No. of Functions: 1; Power Supplies (V): 5;

LOW NOISE

50 ohm

COMPONENT

12.5 dB

20 dBm

e3

1

12000 MHz

1000 MHz

WAFER

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

88 mA

GAAS

Tin (Sn)