Loading...

AVALANCHE PHOTODIODE Other Function Optoelectronics 6

Other Function Optoelectronics
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Backlight Characters Per Row Minimum Collector-emitter Breakdown Voltage Color Color At Wavelength Configuration Control Current Control Voltage Minimum Current Transfer Ratio Nominal Current Transfer Ratio Maximum Dark Current Display Format Display Height Fluid Type Maximum Forward Current Maximum Forward Voltage Gap Size Horizontal Pixel Count Infrared (IR) Range Input Type Maximum Isolation Voltage JESD-609 Code Lens Type Nominal Light Current Minimum Luminous Intensity Nominal Luminous Intensity (mcd) Mounting Feature No. of Characters No. of Elements No. of Functions No. of LEDs in Array No. of Terminals Maximum On State Current Maximum On State Voltage Maximum On State Resistance Maximum Operating Temperature Minimum Operating Temperature Optoelectronic Type Output Circuit Type Maximum Output Voltage Depth Height Length Packing Method Peak Wavelength (nm) Polarization Mode Maximum Power Dissipation Maximum Response Time Nominal Response Time Minimum Reverse Breakdown Voltage Maximum Reverse Voltage Rows Per Display Semiconductor Material Shape Size Sub-Category Maximum Supply Current Maximum Supply Voltage Minimum Supply Voltage Nominal Supply Voltage Terminal Finish Terminal Pitch Pixel Count (Vertical) Viewing Angle Viewing Area Height Viewing Area Length
MICRORB-10020-MLP-TR by Onsemi

MICRORB-10020-MLP-TR

Onsemi

MICRORB-10020-MLP-TR by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor. It operates b/w -40 to 85 °C and has a peak wavelength of 1050 nm. Ideal for surface mount applications, it boasts a fast response time of 0.000000001 s.

SINGLE WITH BUILT-IN RESISTOR

540 nA

SURFACE MOUNT

4

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

1050

.000000001 s

Silicon

RECTANGULAR

.02 mm

MICRORB-10035-MLP-TR1 by Onsemi

MICRORB-10035-MLP-TR1

Onsemi

MICRORB-10035-MLP-TR1 by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor. It operates b/w -40 to 85 °C, with peak wavelength of 1050 nm. Ideal for surface mount applications due to its small size of 0.035 mm and fast response time of 0.0000000009 s.

SINGLE WITH BUILT-IN RESISTOR

1500 nA

SURFACE MOUNT

4

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

1050

.0000000009 s

Silicon

RECTANGULAR

.035 mm

MICRORB-10035-MLP-TR by Onsemi

MICRORB-10035-MLP-TR

Onsemi

MICRORB-10035-MLP-TR by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor. It has a peak wavelength of 1050nm, max response time of 0.9ns, and operates b/w -40 to 85 °C. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.

SINGLE WITH BUILT-IN RESISTOR

1500 nA

SURFACE MOUNT

4

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

1050

.0000000009 s

Silicon

RECTANGULAR

.035 mm

MICRORB-10010-MLP-TR1 by Onsemi

MICRORB-10010-MLP-TR1

Onsemi

MICRORB-10010-MLP-TR1 by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor. It has a peak wavelength of 1050nm, response time of 0.0000000015s, and operates b/w -40 to 85 °C. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.

SINGLE WITH BUILT-IN RESISTOR

520 nA

SURFACE MOUNT

4

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

1050

.0000000015 s

Silicon

RECTANGULAR

.01 mm

MICRORB-10020-MLP-TR1 by Onsemi

MICRORB-10020-MLP-TR1

Onsemi

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Semiconductor Material: Silicon; Packing Method: TR; Configuration: SINGLE WITH BUILT-IN RESISTOR;

SINGLE WITH BUILT-IN RESISTOR

540 nA

SURFACE MOUNT

4

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

1050

.000000001 s

Silicon

RECTANGULAR

.02 mm

MICRORB-10010-MLP-TR by Onsemi

MICRORB-10010-MLP-TR

Onsemi

MICRORB-10010-MLP-TR by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor. It operates b/w -40 to 85 °C and has a peak wavelength of 1050 nm. Ideal for surface mount applications, it boasts a fast response time of 0.0000000015 s.

SINGLE WITH BUILT-IN RESISTOR

520 nA

SURFACE MOUNT

4

85 Cel

-40 Cel

AVALANCHE PHOTODIODE

TR

1050

.0000000015 s

Silicon

RECTANGULAR

.01 mm