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24 SRAM 18

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
SN74AS870DWR by Texas Instruments

SN74AS870DWR

Texas Instruments

SN74AS870DWR by Texas Instruments is a 16x4 MULTI-PORT SRAM with 64-bit memory density. It operates at 5V, has a max access time of 15ns, and features 3-STATE output characteristics. This TTL technology chip is ideal for applications requiring fast and efficient parallel memory storage.

15 ns

DUAL MEMORY FOR MULTIBUS ARCHITECTURE

R-PDSO-G24

15.4 mm

64 bit

MULTI-PORT SRAM

4

1

2

24

16 words

16

ASYNCHRONOUS

70 Cel

0 Cel

16X4

3-STATE

NO

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

2.65 mm

5.5 V

4.5 V

5

YES

TTL

COMMERCIAL

GULL WING

1.27 mm

DUAL

7.5 mm

M48Z02-150PC1 by STMicroelectronics

M48Z02-150PC1

STMicroelectronics

M48Z02-150PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features asynchronous mode and common I/O type, suitable for commercial applications. With a memory density of 16384 bit, this CMOS technology-based IC offers parallel operation in a rectangular package style.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.75 V

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-200PC1 by STMicroelectronics

M48Z02-200PC1

STMicroelectronics

M48Z02-200PC1 by STMicroelectronics is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 200ns. Ideal for applications requiring reliable data storage in commercial temperature environments.

200 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T24

e3

34.545 mm

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z02-70PC1 by STMicroelectronics

M48Z02-70PC1

STMicroelectronics

M48Z02-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 5V supply voltage, operating in asynchronous mode. It features 3-STATE output characteristics and offers 16384 bits memory density. Ideal for applications requiring common I/O type and parallel operation at temperatures up to 70°C.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.75 V

SRAMs

80 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z12-200PC1 by STMicroelectronics

M48Z12-200PC1

STMicroelectronics

STMicroelectronics M48Z12-200PC1 is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It has a max access time of 200ns and standby current of 0.003Amp. Ideal for applications requiring reliable memory storage in commercial temperature environments.

200 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T24

e3

34.545 mm

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z12-70PC1 by STMicroelectronics

M48Z12-70PC1

STMicroelectronics

M48Z12-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features a rectangular package style, asynchronous mode, and common I/O type. Ideal for applications requiring standard SRAM memory technology in commercial temperature grades.

COMMON

R-PDIP-T24

e3

34.545 mm

16384 bit

STANDARD SRAM

8

1

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

4.5 V

SRAMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

DS1220Y-100-IND by Dallas Semiconductor

DS1220Y-100-IND

Dallas Semiconductor

DS1220Y-100-IND by Dallas Semiconductor is a 2Kx8 Non-Volatile SRAM module with 100ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable memory storage in harsh environments.

100 ns

R-PDIP-T24

e0

16384 bit

NON-VOLATILE SRAM MODULE

8

1

24

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP24,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

.004 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

LH5116-10F by Sharp Corporation

LH5116-10F

Sharp Corporation

The Sharp LH5116-10F is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it offers a max access time of 100ns. Ideal for commercial applications, this CMOS technology-based IC has a rectangular package shape and operates in asynchronous mode.

100 ns

R-PDIP-T24

31 mm

16384 bit

STANDARD SRAM

8

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

Not Qualified

5.3 mm

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

DS1220AD-200IND by Maxim Integrated

DS1220AD-200IND

Maxim Integrated

DS1220AD-200IND by Maxim Integrated is a 2Kx8 SRAM with 5V supply, operating in asynchronous mode. It has a max access time of 200ns and industrial temperature grade. Ideal for applications requiring fast and reliable non-volatile memory storage in harsh environments.

200 ns

R-XDMA-P24

e0

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

UNSPECIFIED

DIP

DIP24,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

260

5

Not Qualified

.005 Amp

SRAMs

15 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

2.54 mm

DUAL

40

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution is a 16MX8 SRAM with a package body material of PLASTIC/EPOXY. It operates in synchronous mode with a nominal voltage of 1.8V and has a memory density of 134217728 bits. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

R-PBGA-B24

8 mm

134217728 bit

PSEUDO STATIC RAM

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with 67108864-bit memory density. Operating at 1.8V, it offers a synchronous mode with a max access time of 36ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

36 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR

Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with a memory density of 67108864 bit. It operates in synchronous mode with a max access time of 40 ns, suitable for industrial applications requiring fast and reliable parallel memory storage. The package style is grid array, thin profile, making it ideal for space-constrained designs.

40 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8DALL-200B1LI by Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI

Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI is an 8MX8 SRAM with 200 MHz clock frequency, 1.7-1.95 V supply voltage, and 85°C operating temperature. Ideal for industrial applications requiring high-speed synchronous memory with a thin profile grid array package.

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

NO

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.2 mm

.00004 Amp

1.7 V

40 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm

S80KS5122GABHV023 by Infineon Technologies

S80KS5122GABHV023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Enable: NO; Maximum Clock Frequency (fCLK): 200 MHz;

200 MHz

COMMON

R-PBGA-B24

8 mm

536870912 bit

HYPERRAM

8

3

1

1

24

67108964 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

3-STATE

NO

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

1 mm

.004 Amp

1.7 V

44 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S80KS5122GABHA023 by Infineon Technologies

S80KS5122GABHA023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; Input/Output Type: COMMON;

200 MHz

COMMON

R-PBGA-B24

8 mm

536870912 bit

HYPERRAM

8

3

1

1

24

67108964 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

NO

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

.004 Amp

1.7 V

44 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S80KS5122GABHB023 by Infineon Technologies

S80KS5122GABHB023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Minimum Standby Voltage: 1.7 V; Maximum Clock Frequency (fCLK): 200 MHz;

200 MHz

COMMON

R-PBGA-B24

8 mm

536870912 bit

HYPERRAM

8

3

1

1

24

67108964 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

3-STATE

NO

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

.004 Amp

1.7 V

44 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S80KS5122GABHM023 by Infineon Technologies

S80KS5122GABHM023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL; Package Equivalence Code: BGA24,5X5,40;

200 MHz

COMMON

R-PBGA-B24

8 mm

536870912 bit

HYPERRAM

8

3

1

1

24

67108964 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

3-STATE

NO

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

.004 Amp

1.7 V

44 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S80KS5122GABHI023 by Infineon Technologies

S80KS5122GABHI023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Density: 536870912 bit; No. of Words Code: 64M;

200 MHz

COMMON

R-PBGA-B24

8 mm

536870912 bit

HYPERRAM

8

3

1

1

24

67108964 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

NO

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

1 mm

.004 Amp

1.7 V

44 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

6 mm