Loading...

119 SRAM 7

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
71V35761SA200BGGI by Integrated Device Technology

71V35761SA200BGGI

Integrated Device Technology

71V35761SA200BGGI by Integrated Device Technology is a 128KX36 CACHE SRAM with 3.3V supply voltage, operating synchronously at -40 to 85°C. Featuring a fast access time of 3.1 ns, it's ideal for industrial applications requiring high-speed parallel memory operations.

3.1 ns

PIPELINED

R-PBGA-B119

e1

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

BOTTOM

71V35761S183BGGI8 by Integrated Device Technology

71V35761S183BGGI8

Integrated Device Technology

71V35761S183BGGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3.3 ns access time. Ideal for industrial applications requiring high-speed data processing in compact systems.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e1

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

Not Qualified

2.36 mm

.035 Amp

3.14 V

SRAMs

350 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1.27 mm

BOTTOM

30

14 mm

71V35761S183BGGI by Integrated Device Technology

71V35761S183BGGI

Integrated Device Technology

Integrated Device Technology's 71V35761S183BGGI is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz. It features a 3-STATE output and operates at an industrial temperature range of -40 to 85 °C. Suitable for applications requiring fast access times and high memory density.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e1

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

Not Qualified

2.36 mm

.035 Amp

3.14 V

SRAMs

350 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1.27 mm

BOTTOM

30

14 mm

71V25761S183BGI8 by Integrated Device Technology

71V25761S183BGI8

Integrated Device Technology

71V25761S183BGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3-STATE output. It has a package style of GRID ARRAY and is suitable for industrial applications requiring fast access times and high memory density.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e0

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

225

2.5,3.3

Not Qualified

2.36 mm

.035 Amp

3.14 V

SRAMs

350 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

20

14 mm

71V3557S75BGI8 by Integrated Device Technology

71V3557S75BGI8

Integrated Device Technology

71V3557S75BGI8 by Integrated Device Technology is a 128Kx36 ZBT SRAM with 7.5ns access time, operating at 3.3V. It features synchronous operation and a memory density of 4718592 bits, suitable for industrial applications requiring fast and reliable parallel memory access.

7.5 ns

R-PBGA-B119

e0

22 mm

4718592 bit

ZBT SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

225

Not Qualified

2.36 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

20

14 mm

71V35761S183BGG8 by Integrated Device Technology

71V35761S183BGG8

Integrated Device Technology

71V35761S183BGG8 by Integrated Device Technology is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz clock frequency. It features a 3-STATE output and operates at a voltage of 3.3V, making it suitable for high-speed memory applications in commercial-grade devices.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e1

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

Not Qualified

2.36 mm

.03 Amp

3.14 V

SRAMs

340 mA

3.465 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1.27 mm

BOTTOM

30

14 mm

71V35761S183BGI8 by Integrated Device Technology

71V35761S183BGI8

Integrated Device Technology

71V35761S183BGI8 by Integrated Device Technology is a CACHE SRAM with 128KX36 organization, operating at 183 MHz clock frequency. It has a max access time of 3.3 ns and is suitable for industrial applications requiring fast synchronous memory solutions.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e0

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

225

3.3

Not Qualified

2.36 mm

.035 Amp

3.14 V

SRAMs

350 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

20

14 mm