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NON-VOLATILE SRAM SRAM 20

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
DS1270W-100-IND by Dallas Semiconductor

DS1270W-100-IND

Dallas Semiconductor

DS1270W-100-IND by Dallas Semiconductor is a 2MX8 NON-VOLATILE SRAM with 16777216 bit memory density. It operates at 3.3V, has a max access time of 100ns, and is designed for INDUSTRIAL applications requiring reliable data storage in harsh environments.

100 ns

R-PDIP-T36

e0

16777216 bit

NON-VOLATILE SRAM

8

36

2097152 words

2M

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

3.3

Not Qualified

.0002 Amp

SRAMs

50 mA

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

NP5Q032AE3ESFC0E by Micron Technology

NP5Q032AE3ESFC0E

Micron Technology

NON-VOLATILE SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

R-PDSO-G16

33554432 bit

NON-VOLATILE SRAM

16

85 Cel

-40 Cel

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

3/3.3

Not Qualified

.0002 Amp

SRAMs

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NP5Q064AE3ESFC0E by Micron Technology

NP5Q064AE3ESFC0E

Micron Technology

NON-VOLATILE SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Technology: CMOS;

R-PDSO-G16

67108864 bit

NON-VOLATILE SRAM

16

85 Cel

-40 Cel

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

3/3.3

Not Qualified

.0002 Amp

SRAMs

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

X24C44P by Xicor

X24C44P

Xicor

X24C44P by Xicor is a 256-bit NON-VOLATILE SRAM with 16x16 organization and 375ns access time. Operating at 5V, it features synchronous mode and 3-STATE output, suitable for commercial applications requiring reliable memory storage in a compact IN-LINE package.

375 ns

EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES

R-PDIP-T8

e0

10.03 mm

256 bit

NON-VOLATILE SRAM

16

1

1

8

16 words

16

SYNCHRONOUS

70 Cel

0 Cel

16X16

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

4.07 mm

.00005 Amp

SRAMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

M48Z2M1Y-70PL1 by STMicroelectronics

M48Z2M1Y-70PL1

STMicroelectronics

M48Z2M1Y-70PL1 by STMicroelectronics is a 2MX8 SRAM with 16777216 bit memory density, operating at 5V. It features an access time of 70ns, output enable function, and operates in parallel mode. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

70 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

9.52 mm

.008 Amp

SRAMs

140 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

CY14MB256J2-SXI by Cypress Semiconductor

CY14MB256J2-SXI

Cypress Semiconductor

CY14MB256J2-SXI by Cypress Semiconductor is a 32Kx8 NON-VOLATILE SRAM with 262144-bit memory density. Operating at 3V, it features SYNCHRONOUS mode and SERIAL interface. Ideal for industrial applications, this SRAM has a small outline package and operates b/w -40 to 85°C.

R-PDSO-G8

e4

4.889 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

Not Qualified

1.727 mm

.00015 Amp

SRAMs

3 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.8985 mm

M48Z58-70PC1 by STMicroelectronics

M48Z58-70PC1

STMicroelectronics

M48Z58-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. Operating at 5V, it features a max access time of 70ns and output enable function. This CMOS technology-based IC is ideal for applications requiring reliable data storage in commercial temperature environments.

70 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58Y-70PC1 by STMicroelectronics

M48Z58Y-70PC1

STMicroelectronics

M48Z58Y-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 70ns. This rectangular package SRAM is commonly used in applications requiring reliable data storage and retrieval in commercial temperature environments.

70 ns

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

R-PDIP-T28

e3

39.625 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CY22E016L-SZ45XC by Cypress Semiconductor

CY22E016L-SZ45XC

Cypress Semiconductor

CY22E016L-SZ45XC by Cypress Semiconductor is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it has an access time of 45ns and is ideal for commercial applications requiring non-volatile memory solutions. The package style is small outline, with Gull Wing terminals and a temperature range of 0-70°C.

45 ns

R-PDSO-G28

e4

17.905 mm

16384 bit

NON-VOLATILE SRAM

8

3

1

28

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

Not Qualified

2.67 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

7.505 mm

STK20C04-WF25I by Simtek

STK20C04-WF25I

Simtek

Simtek's STK20C04-WF25I is a 512x8 non-volatile SRAM with 4096-bit memory density. Operating at 5V, it has an access time of 25ns and consumes a max of 90mA. Ideal for industrial applications requiring reliable asynchronous memory solutions in a compact rectangular package.

25 ns

R-PDIP-T28

e3

36.83 mm

4096 bit

NON-VOLATILE SRAM

8

1

28

512 words

512

ASYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

260

5

Not Qualified

4.57 mm

.00075 Amp

SRAMs

90 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z2M1V-85PL1 by STMicroelectronics

M48Z2M1V-85PL1

STMicroelectronics

M48Z2M1V-85PL1 by STMicroelectronics is a 2Mx8 non-volatile SRAM with a max access time of 85 ns. It operates asynchronously at a supply voltage of 3.3V and supports temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention, it features a compact in-line package with 36 terminals.

85 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.001 Amp

SRAMs

70 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z58Y-70MH1E by STMicroelectronics

M48Z58Y-70MH1E

STMicroelectronics

M48Z58Y-70MH1E by STMicroelectronics is a non-volatile SRAM with 8K x 8 organization, operating at a nominal voltage of 5V. It features asynchronous access with a max access time of 70 ns and operates in temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention and fast performance.

70 ns

R-PDSO-G28

e3

18.1 mm

65536 bit

NON-VOLATILE SRAM

8

3

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH1E by STMicroelectronics

M48Z35Y-70MH1E

STMicroelectronics

M48Z35Y-70MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a max access time of 70 ns, operating at 5V. It features a compact SO package and operates asynchronously, making it ideal for data storage in various electronic applications. With a commercial temp grade, it suits diverse environments.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH6E by STMicroelectronics

M48Z35Y-70MH6E

STMicroelectronics

M48Z35Y-70MH6E by STMicroelectronics is a non-volatile SRAM with a 32K x 8 organization, operating at 5V. It features a max access time of 70 ns and operates in temperatures from -40 °C to 85 °C. Ideal for industrial applications requiring reliable data retention.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z32V-35MT1F by STMicroelectronics

M48Z32V-35MT1F

STMicroelectronics

M48Z32V-35MT1F by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features a max access time of 35 ns and operates in temperatures from 0 °C to 70 °C. This compact, surface-mount device ensures efficient performance in various electronic systems.

35 ns

R-PDSO-G44

e3/e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SSOP

SOP44,.5,32

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

3.05 mm

.0005 Amp

SRAMs

45 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

.81 mm

DUAL

NOT SPECIFIED

8.56 mm

M48Z35AV-10MH1E by STMicroelectronics

M48Z35AV-10MH1E

STMicroelectronics

M48Z35AV-10MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features asynchronous operation with a max access time of 100 ns and operates b/w 0 °C to 70 °C. This compact, surface-mount device is perfect for commercial electronics needing efficient memory solutions.

100 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

CAT24C44VI-T3 by Onsemi

CAT24C44VI-T3

Onsemi

CAT24C44VI-T3 by Onsemi is a 256-bit non-volatile SRAM with 16x16 organization. Operating at 5V, it has a max standby current of 0.00003A and operates in industrial temperature range (-40 to 85°C). Ideal for applications requiring small outline packages and synchronous operation.

R-PDSO-G8

e3

4.9 mm

256 bit

NON-VOLATILE SRAM

16

1

1

8

16 words

16

SYNCHRONOUS

85 Cel

-40 Cel

16X16

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

Not Qualified

1.75 mm

.00003 Amp

SRAMs

3 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

CY14E256L-SZ35XI by Cypress Semiconductor

CY14E256L-SZ35XI

Cypress Semiconductor

CY14E256L-SZ35XI by Cypress Semiconductor is a 32Kx8 SRAM with 262144-bit memory density. Operating at 5V, it offers a max access time of 35ns and industrial temperature grade suitability. Ideal for applications requiring fast, non-volatile memory storage in compact designs.

35 ns

R-PDSO-G32

e3

20.726 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.54 mm

.0015 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

7.505 mm

CY14ME064J2-SXQT by Infineon Technologies

CY14ME064J2-SXQT

Infineon Technologies

NON-VOLATILE SRAM; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Output Enable: NO; Organization: 8KX8;

3.4 MHz

COMMON

R-PDSO-G8

4.889 mm

65536 bit

NON-VOLATILE SRAM

8

3

1

1

8

8192 words

8K

SYNCHRONOUS

105 Cel

-40 Cel

8KX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.727 mm

.00025 Amp

4.5 V

4 mA

5.5 V

4.5 V

5

YES

CMOS

GULL WING

1.27 mm

DUAL

3.8985 mm

CY14ME064Q2A-SXQT by Infineon Technologies

CY14ME064Q2A-SXQT

Infineon Technologies

NON-VOLATILE SRAM; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Output Enable: NO;

40 MHz

COMMON

R-PDSO-G8

4.889 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

105 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.727 mm

.00025 Amp

4.5 V

6 mA

5.5 V

4.5 V

5

YES

CMOS

GULL WING

1.27 mm

DUAL

3.8985 mm