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VBGA Flash Memory 96

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F128G08CECABH1-10Z:A by Micron Technology

MT29F128G08CECABH1-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12:A by Micron Technology

MT29F128G08CECABH1-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12ITZ:A by Micron Technology

MT29F128G08CECABH1-12ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Type: MLC NAND TYPE;

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F128G08CECABH1-12Z:A by Micron Technology

MT29F128G08CECABH1-12Z:A

Micron Technology

Micron Technology's MT29F128G08CECABH1-12Z:A is a 16GX8 MLC NAND flash memory with 137.4Gb density and operates at 3.3V. It features synchronous operation, very thin profile grid array package, and commercial temperature grade suitability for various applications requiring high-density storage in compact devices.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-10Z:A by Micron Technology

MT29F64G08CBCABH1-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-12:A by Micron Technology

MT29F64G08CBCABH1-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Words: 8589934592 words;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-12ITZ:A by Micron Technology

MT29F64G08CBCABH1-12ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F64G08CBCABH1-12Z:A by Micron Technology

MT29F64G08CBCABH1-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Organization: 8GX8;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

12 mm

MT29F16G08ABCBBH1-12:B by Micron Technology

MT29F16G08ABCBBH1-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 50 mA;

20 ns

YES

NO

R-PBGA-B100

e1

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

1.8,3/3.3

2.7

Not Qualified

YES

1 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F16G08ABCBBH1-12IT:B by Micron Technology

MT29F16G08ABCBBH1-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

20 ns

YES

NO

R-PBGA-B100

e1

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

1.8,3/3.3

2.7

Not Qualified

YES

1 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F32G08AECBBH1-12:B by Micron Technology

MT29F32G08AECBBH1-12:B

Micron Technology

Micron Technology's MT29F32G08AECBBH1-12:B is a 3.3V SLC NAND Flash Memory with 4GX8 organization, 34359738368-bit memory density, and operates in commercial temperature grade. It features a parallel interface, 100 terminals in a grid array package style measuring 12mm x 18mm x 1mm. Ideal for applications requiring high-speed synchronous operation and reliable data storage.

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F32G08AECBBH1-12IT:B by Micron Technology

MT29F32G08AECBBH1-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

3

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F16G08ABCBBH1-12AIT:B by Micron Technology

MT29F16G08ABCBBH1-12AIT:B

Micron Technology

Micron Technology's MT29F16G08ABCBBH1-12AIT:B is a 2GX8 SLC NAND flash memory with 4K page size and 512K sector size. Operating at 3.3V, it offers industrial-grade endurance of 100k cycles. Suitable for applications requiring high-density, reliable storage solutions in industrial environments.

83MHZ CLOCK FREQUENCY IS AVAILABLE

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B100

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

ASYNCHRONOUS/SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

NOT SPECIFIED

3.3

YES

1 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

YES

SLC NAND TYPE

12 mm

IS26KL256S-DABLI00 by Integrated Silicon Solution

IS26KL256S-DABLI00

Integrated Silicon Solution

IS26KL256S-DABLI00 by Integrated Silicon Solution is a 32MX8 Flash Memory with 268Mbit memory density. Operating at 3V, it offers synchronous mode and parallel interface. Ideal for industrial applications requiring fast access time of 96ns in a compact GRID ARRAY package.

96 ns

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT29F32G08AECCBH1-10:C by Micron Technology

MT29F32G08AECCBH1-10:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

20 ns

YES

NO

R-PBGA-B100

18 mm

34359738368 bit

FLASH

8

1

8K

100

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F32G08AECCBH1-10Z:C by Micron Technology

MT29F32G08AECCBH1-10Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

20 ns

YES

NO

R-PBGA-B100

18 mm

34359738368 bit

FLASH

8

1

8K

100

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F16G08ABCCBH1-10ITZ:C by Micron Technology

MT29F16G08ABCCBH1-10ITZ:C

Micron Technology

MT29F16G08ABCCBH1-10ITZ:C by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 512K sector size. It operates synchronously in industrial temperatures, featuring a parallel interface with 100 terminals. Ideal for applications requiring fast access times and high memory density.

20 ns

YES

NO

R-PBGA-B100

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F128G08CBCCBH6-6R:C by Micron Technology

MT29F128G08CBCCBH6-6R:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 152; Package Code: VBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PBGA-B152

18 mm

137438953472 bit

FLASH

8

1

152

17179869184 words

16G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MT29F128G08CBECBH6-12:C by Micron Technology

MT29F128G08CBECBH6-12:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 152; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS;

R-PBGA-B152

18 mm

137438953472 bit

FLASH

8

1

152

17179869184 words

16G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MT29F256G08CECCBH6-6R:C by Micron Technology

MT29F256G08CECCBH6-6R:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 152; Package Code: VBGA; Package Shape: RECTANGULAR; Type: MLC NAND TYPE;

R-PBGA-B152

18 mm

274877906944 bit

FLASH

8

1

152

34359738368 words

32G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MT29F256G08CEECBH6-12:C by Micron Technology

MT29F256G08CEECBH6-12:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 152; Package Code: VBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

R-PBGA-B152

18 mm

274877906944 bit

FLASH

8

1

152

34359738368 words

32G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MTFC64GAPALHT-AIT by Micron Technology

MTFC64GAPALHT-AIT

Micron Technology

Micron Technology's MTFC64GAPALHT-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it offers -40 to 85 °C temp range and AEC-Q100 screening for industrial applications. With a very thin profile, this package features a grid array style suitable for high-speed data storage systems.

200 MHz

5

R-PBGA-B100

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC16GAPALHT-AAT by Micron Technology

MTFC16GAPALHT-AAT

Micron Technology

MTFC16GAPALHT-AAT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a memory density of 137438953472 bit and supports industrial temperature grade applications. With a very thin profile package style, it is suitable for high-performance devices requiring fast data storage and retrieval.

200 MHz

5

R-PBGA-B100

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GAMALHT-AIT by Micron Technology

MTFC8GAMALHT-AIT

Micron Technology

Micron Technology's MTFC8GAMALHT-AIT is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 85°C max operating temp. Ideal for industrial applications requiring high-speed data storage in compact devices due to its very thin profile package style and AEC-Q100 screening level.

200 MHz

5

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GAMALHT-AAT by Micron Technology

MTFC8GAMALHT-AAT

Micron Technology

MTFC8GAMALHT-AAT by Micron Technology is a 8GX8 NAND flash memory with 68719476736 bit density. It operates in synchronous mode at up to 200 MHz clock frequency, suitable for industrial applications requiring high-speed data storage and retrieval. With a temperature range of -40 to 105 °C, it offers reliable performance in harsh environments.

200 MHz

5

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAPALHT-AAT by Micron Technology

MTFC32GAPALHT-AAT

Micron Technology

MTFC32GAPALHT-AAT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it offers industrial-grade performance with -40 to 105 °C temperature range. Ideal for applications requiring high-speed data storage in compact form factors.

200 MHz

5

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAPALHT-AIT by Micron Technology

MTFC32GAPALHT-AIT

Micron Technology

Micron Technology's MTFC32GAPALHT-AIT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it features a very thin profile grid array package suitable for industrial applications. With a temperature range of -40 to 85 °C, this CMOS technology memory supports parallel operation and has a min data retention time of 5 units.

200 MHz

5

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

S28HS01GTGZBHA030 by Infineon Technologies

S28HS01GTGZBHA030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Output Characteristics: 3-STATE; Minimum Operating Temperature: -40 Cel;

200 MHz

25

300000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

1.8

AEC-Q100

1 mm

SPI

.00016 Amp

173 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HS512TDPBHB013 by Infineon Technologies

S25HS512TDPBHB013

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Package Equivalence Code: BGA24,5X5,40; Maximum Seated Height: 1 mm;

133 MHz

25

1280000 Write/Erase Cycles

S-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

1.8

AEC-Q100

1 mm

SPI

.00034 Amp

69 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HS512TDPBHI013 by Infineon Technologies

S25HS512TDPBHI013

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel; Surface Mount: YES;

133 MHz

25

1280000 Write/Erase Cycles

S-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

1.8

1 mm

SPI

.00034 Amp

69 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HS512TDSBHV013 by Infineon Technologies

S25HS512TDSBHV013

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 2 V; Terminal Pitch: 1 mm;

166 MHz

25

1280000 Write/Erase Cycles

S-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

1.8

1 mm

SPI

.00034 Amp

69 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HS512TFABHV013 by Infineon Technologies

S25HS512TFABHV013

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Serial Bus Type: SPI; Maximum Supply Voltage (Vsup): 2 V;

166 MHz

25

1280000 Write/Erase Cycles

S-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

1.8

1 mm

SPI

.00034 Amp

69 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL01GTFABHA030 by Infineon Technologies

S25HL01GTFABHA030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; No. of Functions: 1; Parallel or Serial: SERIAL;

166 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

AEC-Q100

1 mm

SPI

.00056 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL01GTFABHB030 by Infineon Technologies

S25HL01GTFABHB030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Serial Bus Type: SPI;

166 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

AEC-Q100

1 mm

SPI

.00056 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL01GTFABHV030 by Infineon Technologies

S25HL01GTFABHV030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; No. of Functions: 1; Technology: CMOS;

166 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

1 mm

SPI

.00056 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL01GTFABHV033 by Infineon Technologies

S25HL01GTFABHV033

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Terminal Form: BALL; No. of Functions: 1;

166 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

1 mm

SPI

.00056 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL512TFABHI010 by Infineon Technologies

S25HL512TFABHI010

Infineon Technologies

Infineon's S25HL512TFABHI010 is a 64MX8 NOR flash memory with 536MB density. Operating at 166MHz, it offers 1280000 write/erase cycles and SPI serial bus type for applications requiring high endurance and fast data transfer. With a low standby current of 0.00034A, it suits devices needing reliable non-volatile memory solutions.

166 MHz

25

1280000 Write/Erase Cycles

S-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

1 mm

SPI

.00034 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL512TFABHM010 by Infineon Technologies

S25HL512TFABHM010

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Type: NOR TYPE; No. of Functions: 1;

166 MHz

25

1280000 Write/Erase Cycles

S-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

AEC-Q100

1 mm

SPI

.00034 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL512TFABHV013 by Infineon Technologies

S25HL512TFABHV013

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Terminal Form: BALL; No. of Words Code: 64M;

166 MHz

25

1280000 Write/Erase Cycles

S-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

1 mm

SPI

.00034 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HS01GTDPBHA030 by Infineon Technologies

S25HS01GTDPBHA030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Organization: 128MX8; Surface Mount: YES;

133 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

1.8

AEC-Q100

1 mm

SPI

.00051 Amp

72 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HS01GTFABHA030 by Infineon Technologies

S25HS01GTFABHA030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Length: 8 mm; Maximum Clock Frequency (fCLK): 166 MHz;

166 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

1.8

AEC-Q100

1 mm

SPI

.00051 Amp

72 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HS01GTFABHB033 by Infineon Technologies

S25HS01GTFABHB033

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Maximum Seated Height: 1 mm; Terminal Pitch: 1 mm;

166 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

1.8

AEC-Q100

1 mm

SPI

.00051 Amp

72 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL01GTDPBHI030 by Infineon Technologies

S25HL01GTDPBHI030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Width: 8 mm; Minimum Supply Voltage (Vsup): 2.7 V;

133 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

1 mm

SPI

.00056 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL01GTDPBHV033 by Infineon Technologies

S25HL01GTDPBHV033

Infineon Technologies

Infineon's S25HL01GTDPBHV033 is a 128Mx8 NOR flash memory with 133MHz clock frequency, suitable for SPI serial bus applications. Operating at -40 to 105°C, it offers 2560000 write/erase cycles and has a low standby current of 0.00056A. Its compact GRID ARRAY package with 24 terminals makes it ideal for space-constrained designs.

133 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

1 mm

SPI

.00056 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL01GTFABHI033 by Infineon Technologies

S25HL01GTFABHI033

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Serial Bus Type: SPI; Terminal Pitch: 1 mm;

166 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

1 mm

SPI

.00056 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL01GTFABHM030 by Infineon Technologies

S25HL01GTFABHM030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Serial Bus Type: SPI; Maximum Clock Frequency (fCLK): 166 MHz;

166 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

AEC-Q100

1 mm

SPI

.00056 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL01GTFABHM033 by Infineon Technologies

S25HL01GTFABHM033

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 3.6 V; Package Body Material: PLASTIC/EPOXY;

166 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

AEC-Q100

1 mm

SPI

.00056 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL512TDPBHB010 by Infineon Technologies

S25HL512TDPBHB010

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Memory Width: 8; Maximum Operating Temperature: 105 Cel;

133 MHz

25

1280000 Write/Erase Cycles

S-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

3

AEC-Q100

1 mm

SPI

.00034 Amp

69 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE