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Texas Instruments DRAM 14

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
TMS4030JL by Texas Instruments

TMS4030JL

Texas Instruments

TMS4030JL by Texas Instruments is a 4Kx1 DRAM with 4096-bit memory density, 300ns max access time, and 64 refresh cycles. It has separate I/O type and operates in commercial temperature range. Ideal for applications requiring low-power memory solutions in industrial electronics.

300 ns

SEPARATE

R-XDIP-T22

4096 bit

1

22

4096 words

4K

70 Cel

0 Cel

4KX1

3-STATE

CERAMIC

DIP

DIP22,.4

RECTANGULAR

IN-LINE

NOT SPECIFIED

Not Qualified

64

Other Memory ICs

60 mA

NO

MOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

TMS45169-70DZ by Texas Instruments

TMS45169-70DZ

Texas Instruments

TMS45169-70DZ by Texas Instruments is a 256Kx16 EDO DRAM with 70ns access time, 512 refresh cycles, and 3-STATE output. It operates at a voltage of 5V and has a max standby current of 0.001A. Commonly used in commercial applications requiring high-speed memory solutions.

70 ns

COMMON

R-PDSO-J40

4194304 bit

EDO DRAM

16

40

262144 words

256K

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

512

YES

.001 Amp

DRAMs

160 mA

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

TM124BBK32-80 by Texas Instruments

TM124BBK32-80

Texas Instruments

TM124BBK32-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in asynchronous mode with a max access time of 80 ns. Ideal for applications requiring fast page access and common I/O type in microelectronic assemblies.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

33554432 bit

FAST PAGE DRAM MODULE

32

1

1

72

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX32

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

NO

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

TM124BBK32S-80 by Texas Instruments

TM124BBK32S-80

Texas Instruments

TM124BBK32S-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in FAST PAGE access mode with an 80 ns max access time. Ideal for commercial applications requiring high-speed data storage and retrieval.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

33554432 bit

FAST PAGE DRAM MODULE

32

1

1

72

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX32

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

NO

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

SMJ44400-10HMM by Texas Instruments

SMJ44400-10HMM

Texas Instruments

SMJ44400-10HMM by Texas Instruments is a 1MX4 FAST PAGE DRAM with 1048576 words, operating at 5V. It features a max access time of 100ns, refresh cycles of 1024, and supports common I/O type. Ideal for military applications due to its MIL-STD screening levels and small outline package style.

FAST PAGE

100 ns

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

COMMON

R-CDSO-N20

17.78 mm

4194304 bit

FAST PAGE DRAM

4

1

1

20

1048576 words

1M

ASYNCHRONOUS

125 Cel

-55 Cel

1MX4

3-STATE

CERAMIC, METAL-SEALED COFIRED

SON

SOLCC20/26,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

38535Q/M;38534H;883B

2.337 mm

NO

.004 Amp

DRAMs

75 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

SMJ44400-80HMM by Texas Instruments

SMJ44400-80HMM

Texas Instruments

SMJ44400-80HMM by Texas Instruments is a 1MX4 FAST PAGE DRAM with 1048576 words, operating at 5V. It features a max access time of 80ns, refresh cycles of 1024, and military-grade temperature range. Ideal for applications requiring high-speed memory operations in harsh environments.

FAST PAGE

80 ns

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

COMMON

R-CDSO-N20

17.78 mm

4194304 bit

FAST PAGE DRAM

4

1

1

20

1048576 words

1M

ASYNCHRONOUS

125 Cel

-55 Cel

1MX4

3-STATE

CERAMIC, METAL-SEALED COFIRED

SON

SOLCC20/26,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

38535Q/M;38534H;883B

2.337 mm

NO

.004 Amp

DRAMs

85 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

TMS48C121-10DZ by Texas Instruments

TMS48C121-10DZ

Texas Instruments

TMS48C121-10DZ by Texas Instruments is a 128Kx8 DRAM with 131072 words, operating at 5V. It features an asynchronous mode, 100ns access time, and 512 refresh cycles. Ideal for video applications due to its small outline package and CMOS technology.

FAST PAGE

100 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT

R-PDSO-J40

26.035 mm

1048576 bit

VIDEO DRAM

8

1

2

40

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

512

3.76 mm

.01 Amp

Other Memory ICs

95 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

TMS48C128-80DJ by Texas Instruments

TMS48C128-80DJ

Texas Instruments

TMS48C128-80DJ by Texas Instruments is a 128Kx8 FAST PAGE DRAM with 80ns access time, operating at 5V. It features 3-STATE output characteristics and consumes up to 80mA. Ideal for applications requiring high-speed memory operations in commercial temperature environments.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-PDSO-J24

17.145 mm

1048576 bit

FAST PAGE DRAM

8

1

1

24

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ24/26,.34

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

512

3.76 mm

.002 Amp

DRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

7.57 mm

TMS626402-12DGE by Texas Instruments

TMS626402-12DGE

Texas Instruments

TMS626402-12DGE by Texas Instruments is a 4MX4 Synchronous DRAM with 16777216 bit memory density. Operating at 3.3V, it offers dual bank page burst access mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in compact devices.

DUAL BANK PAGE BURST

CAS BEFORE RAS/SELF REFRESH

R-PDSO-G44

18.41 mm

16777216 bit

SYNCHRONOUS DRAM

4

1

1

44

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX4

3-STATE

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

4096

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

TMS44165-70DZ by Texas Instruments

TMS44165-70DZ

Texas Instruments

TMS44165-70DZ by Texas Instruments is a 256Kx16 DRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for applications requiring fast page access in commercial temperature grades.

FAST PAGE

70 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-PDSO-J40

26.035 mm

4194304 bit

FAST PAGE DRAM

16

1

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

3.76 mm

NO

.001 Amp

DRAMs

120 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

TM248NBK36R-80 by Texas Instruments

TM248NBK36R-80

Texas Instruments

TM248NBK36R-80 by Texas Instruments is a 2MX36 DRAM module with 75497472-bit memory density. It operates at 5V, has a memory width of 36, and offers fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

75497472 bit

FAST PAGE DRAM MODULE

36

1

1

72

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

.018 Amp

DRAMs

1440 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

TM4100EAD9-80 by Texas Instruments

TM4100EAD9-80

Texas Instruments

TM4100EAD9-80 by Texas Instruments is a 4MX9 DRAM module with 37748736-bit memory density. It operates asynchronously at 5V, featuring self-refresh capability and fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.

FAST PAGE

80 ns

AUTO/SELF REFRESH

COMMON

R-XSMA-N30

37748736 bit

FAST PAGE DRAM MODULE

9

1

1

30

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX9

3-STATE

UNSPECIFIED

SIMM

SIM30

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

20.447 mm

YES

.009 Amp

DRAMs

720 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

2.54 mm

SINGLE

TM4100GAD8-80 by Texas Instruments

TM4100GAD8-80

Texas Instruments

TM4100GAD8-80 by Texas Instruments is a 4MX8 DRAM module with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE access, and self-refresh capability. Ideal for applications requiring fast memory access and common I/O type in microelectronic assemblies.

FAST PAGE

80 ns

AUTO/SELF REFRESH

COMMON

R-XSMA-N30

33554432 bit

FAST PAGE DRAM MODULE

8

1

1

30

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX8

3-STATE

UNSPECIFIED

SIMM

SIM30

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

20.447 mm

YES

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

2.54 mm

SINGLE

SMJ4416-15JDL by Texas Instruments

SMJ4416-15JDL

Texas Instruments

SMJ4416-15JDL by Texas Instruments is a 16KX4 PAGE MODE DRAM with 16384 words, operating at 5V. It features 3-STATE output, asynchronous mode, and common I/O type. Ideal for applications requiring fast access times and high memory density in commercial temperature environments.

PAGE

150 ns

RAS ONLY REFRESH

COMMON

R-CDIP-T18

22.606 mm

65536 bit

PAGE MODE DRAM

4

1

1

18

16384 words

16K

ASYNCHRONOUS

70 Cel

0 Cel

16KX4

3-STATE

CERAMIC, METAL-SEALED COFIRED

DIP

DIP18,.3

RECTANGULAR

IN-LINE

NOT SPECIFIED

5

Not Qualified

256

38535Q/M;38534H;883B

5.08 mm

DRAMs

5.5 V

4.5 V

5

NO

NMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm