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DDR4 DRAM DRAM 171

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
AS4C512M16D4-75BIN by Alliance Memory

AS4C512M16D4-75BIN

Alliance Memory

Alliance Memory's AS4C512M16D4-75BIN is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for applications requiring high memory density and fast data processing in devices like servers, workstations, and networking equipment.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

4,8

.04 Amp

430 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G8SA-062EAIT:E by Micron Technology

MT40A1G8SA-062EAIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAIT:E is a DDR4 DRAM with 1.2V supply, operating at up to 1600MHz clock frequency. It features 1GX8 organization, 1073741824 words capacity, and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics or industrial systems.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.018 Amp

190 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G8SA-062EAUT:E by Micron Technology

MT40A1G8SA-062EAUT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAUT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously, supports self-refresh, and has a max temperature of 125°C. Ideal for applications requiring high-speed memory in automotive or industrial environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.022 Amp

200 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A512M16LY-062EAIT:E by Micron Technology

MT40A512M16LY-062EAIT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EAIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13.5 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.018 Amp

270 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

IS43QR16256B-083RBLI-TR by Integrated Silicon Solution

IS43QR16256B-083RBLI-TR

Integrated Silicon Solution

IS43QR16256B-083RBLI-TR by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.48 MHz clock frequency. It features synchronous operation, self-refresh capability, and common input/output type. Ideal for industrial applications requiring high memory density and fast data processing.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

1200.48 MHz

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

8

.058 Amp

375 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M16LY-062EIT:ETR by Micron Technology

MT40A512M16LY-062EIT:ETR

Micron Technology

Micron Technology's MT40A512M16LY-062EIT:ETR is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. This thin-profile memory module is suitable for applications requiring high-speed data processing in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13.5 mm

8589934592 bit

DDR4 DRAM

16

3

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT53B1024M32D4NQ-053WT:C by Micron Technology

MT53B1024M32D4NQ-053WT:C

Micron Technology

DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: .95 mm; Terminal Position: BOTTOM;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

DDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

85 Cel

-30 Cel

1GX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-062WT:C by Micron Technology

MT53B256M32D1NP-062WT:C

Micron Technology

DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Minimum Supply Voltage (Vsup): 1.06 V;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

DDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

30

10 mm

MT53B512M32D2NP-053WT:C by Micron Technology

MT53B512M32D2NP-053WT:C

Micron Technology

DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 512M; Maximum Clock Frequency (fCLK): 1866 MHz;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

DDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

85 Cel

-30 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-053WT:C by Micron Technology

MT53B256M32D1NP-053WT:C

Micron Technology

DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON; Length: 14.5 mm;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

DDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT40A1G16KH-062EAUT:E by Micron Technology

MT40A1G16KH-062EAUT:E

Micron Technology

Micron Technology's MT40A1G16KH-062EAUT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.043 Amp

299 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT40A2G8JE-062EAUT:E by Micron Technology

MT40A2G8JE-062EAUT:E

Micron Technology

Micron Technology's MT40A2G8JE-062EAUT:E is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a thin profile and fine pitch package style.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

125 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.043 Amp

162 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

30

9 mm

MT40A1G16KH-062EAIT:E by Micron Technology

MT40A1G16KH-062EAIT:E

Micron Technology

Micron Technology's MT40A1G16KH-062EAIT:E is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features common I/O type, synchronous mode, and self-refresh capability. Ideal for applications requiring high-speed memory in automotive and industrial environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.043 Amp

299 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G8JE-062EAAT:E by Micron Technology

MT40A2G8JE-062EAAT:E

Micron Technology

Micron Technology's MT40A2G8JE-062EAAT:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a common I/O type, synchronous mode, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.043 Amp

162 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT40A512M16TB-062E:R by Micron Technology

MT40A512M16TB-062E:R

Micron Technology

Micron Technology's MT40A512M16TB-062E:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

65536

NO

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A4G4SA-062E:F by Micron Technology

MT40A4G4SA-062E:F

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G16KD-062EIT:ETR by Micron Technology

MT40A1G16KD-062EIT:ETR

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:ETR is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT40A1G16KD-062EIT:E by Micron Technology

MT40A1G16KD-062EIT:E

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT40A2G8SA-062E:F by Micron Technology

MT40A2G8SA-062E:F

Micron Technology

Micron Technology's MT40A2G8SA-062E:F is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A512M16TB-062E:J by Micron Technology

MT40A512M16TB-062E:J

Micron Technology

Micron Technology's MT40A512M16TB-062E:J is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B96

13.5 mm

8589934592 bit

DDR4 DRAM

16

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G8SA-062E:J by Micron Technology

MT40A1G8SA-062E:J

Micron Technology

Micron Technology's MT40A1G8SA-062E:J is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G4SA-062E:J by Micron Technology

MT40A2G4SA-062E:J

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G4SA-062E:R by Micron Technology

MT40A2G4SA-062E:R

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR; Package Equivalence Code: BGA78,6X13,32;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A8G4NEA-062E:F by Micron Technology

MT40A8G4NEA-062E:F

Micron Technology

Micron Technology's MT40A8G4NEA-062E:F is a DDR4 DRAM with 8GX4 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access and multi-bank page burst functionality.

MULTI BANK PAGE BURST

1600 MHz

COMMON

R-PBGA-B78

11 mm

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

308 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A512M16TB-062EIT:R by Micron Technology

MT40A512M16TB-062EIT:R

Micron Technology

Micron Technology's MT40A512M16TB-062EIT:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G16TD-062EAUT:F by Micron Technology

MT40A1G16TD-062EAUT:F

Micron Technology

Micron Technology's MT40A1G16TD-062EAUT:F is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.038 Amp

200 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G8AG-062EAAT:F by Micron Technology

MT40A2G8AG-062EAAT:F

Micron Technology

Micron Technology's MT40A2G8AG-062EAAT:F is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a thin profile grid array package, suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.084 Amp

81 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm