Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MT40A512M16JY-075EAIT:B
Micron Technology
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;
MULTI BANK PAGE BURST
AUTO/SELF REFRESH
1333 MHz
COMMON
8
R-PBGA-B96
e1
14 mm
8589934592 bit
DDR4 DRAM
16
1
96
536870912 words
512M
SYNCHRONOUS
95 Cel
-40 Cel
512MX16
3-STATE
PLASTIC/EPOXY
TFBGA
BGA96,9X16,32
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
260
8192
AEC-Q100
1.2 mm
YES
.025 Amp
262 mA
1.26 V
1.14 V
1.2
CMOS
Tin/Silver/Copper (Sn/Ag/Cu)
BALL
.8 mm
BOTTOM
30
8 mm
MT40A512M16JY-083EAAT:B
Micron Technology's MT40A512M16JY-083EAAT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features a thin profile grid array package and operates in synchronous mode with self-refresh capability. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial systems.
1200 MHz
105 Cel
.028 Amp
254 mA
MT40A512M16JY-083EAIT:B
Micron Technology's MT40A512M16JY-083EAIT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
252 mA
MT40A1G8SA-062E:E
Micron Technology's MT40A1G8SA-062E:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
R-PBGA-B78
11 mm
78
1073741824 words
1G
0 Cel
1GX8
BGA78,6X13,32
65536
NO
OTHER
TIN SILVER COPPER
7.5 mm
MT40A1G8SA-075:E
MT40A1G8SA-075:E by Micron Technology is a DDR4 DRAM with 1GX8 organization, 1073741824 words, and 8589934592 bit memory density. It operates synchronously, has self-refresh capability, and is commonly used in multi-bank page burst access mode applications.
85 Cel
MT40A2G4SA-062E:E
Micron Technology's MT40A2G4SA-062E:E is a DDR4 DRAM with 2GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
4
2147483648 words
2G
2GX4
MT40A2G4SA-075:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;
MT40A512M16JY-062E:B
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;
NOT SPECIFIED
MT40A512M16LY-062E:E
Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.
13.5 mm
MT40A1G8WE-083EAIT:B
Micron Technology's MT40A1G8WE-083EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics or industrial control systems.
12 mm
BGA78,9X13,32
182 mA
MT40A1G8WE-083EAUT:B
Micron Technology's MT40A1G8WE-083EAUT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O. The AEC-Q100 screening level makes it ideal for automotive and industrial environments.
125 Cel
.042 Amp
192 mA
MT40A512M16JY-083EAUT:B
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Length: 14 mm;
273 mA
MT40A512M16LY-062EIT:E
Micron Technology's MT40A512M16LY-062EIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.
3
INDUSTRIAL
MT40A4G4DVN-075H:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.14 V;
DUAL BANK PAGE BURST
17179869184 bit
4294967296 words
4G
4GX4
BGA
GRID ARRAY
MT40A256M16LY-062E:F
Micron Technology's MT40A256M16LY-062E:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
4294967296 bit
268435456 words
256M
256MX16
MT40A256M16LY-062EIT:F
Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.
MT40A256M16LY-075:F
Micron Technology's MT40A256M16LY-075:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
MT40A512M8SA-075:F
Micron Technology's MT40A512M8SA-075:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in a compact form factor.
FOUR BANK PAGE BURST
512MX8
MT40A1G16RC-062E:B
Micron Technology's MT40A1G16RC-062E:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in thin-profile devices.
1600 MHz
13 mm
1GX16
10 mm
MT40A512M16JY-083EIT:BTR
Micron Technology's MT40A512M16JY-083EIT:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access mode like multi-bank page burst operations.
MT40A512M8SA-062EIT:F
Micron Technology's MT40A512M8SA-062EIT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access with its four-bank page burst access mode.
MT40A512M16LY-062EAUT:E
Micron Technology's MT40A512M16LY-062EAUT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and automotive temperature grade. Suitable for applications requiring high memory density and fast data access in automotive electronics.
AUTOMOTIVE
AS4C512M8D4-83BCN
Alliance Memory
Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.
10.6 mm
.04 Amp
187 mA
MT40A1G8SA-062EAAT:E
Micron Technology's MT40A1G8SA-062EAAT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously in common I/O mode for automotive applications at temperatures ranging from -40 to 105°C.
.02 Amp
195 mA
MT53D1024M32D4DT-053AAT:D
Micron's MT53D1024M32D4DT-053AAT:D is a 1GX32 DDR4 DRAM with 32-bit memory width and 34359738368 bit density. It operates synchronously in grid array package style, suitable for high-performance computing applications.
X-PBGA-B
34359738368 bit
32
1GX32
UNSPECIFIED
MT40A512M16LY-062EAT:E
Micron Technology's MT40A512M16LY-062EAT:E is a DDR4 DRAM with 512MX16 organization and 8589934592 bit memory density. It operates at a voltage of 1.2V, has a temperature range of -40 to 105°C, and is suitable for industrial applications.
MT40A1G8SA-062E:ETR
Micron Technology's MT40A1G8SA-062E:ETR is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in temperatures ranging from 0 to 95°C.
MT40A256M16LY-062E:FTR
MT40A256M16LY-062E:FTR by Micron Technology is a DDR4 DRAM with 256MX16 organization, operating at a max clock frequency of 1600 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
.003 Amp
312 mA
MT40A2G4SA-062E:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
MT40A2G8VA-062EIT:BTR
MT40A2G8VA-062EIT:BTR by Micron Technology is a DDR4 DRAM with 2GX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and fast access speed in a compact grid array package.
2GX8
MT40A4G4DVN-062H:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
MT40A512M16JY-062E:BTR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;
MT40A512M8RH-083EAAT:BTR
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Standby Voltage: 1.14 V;
1200.4 MHz
10.5 mm
9 mm
MT40A512M8RH-083EAUT:BTR
DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
MT40A8G4CLU-062H:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
8589934592 words
8G
8GX4
MT40A8G4CLU-075H:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;
MT53B1024M32D4NQ-062WT:C
DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS; No. of Words: 1073741824 words;
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
16,32
R-PBGA-B200
14.5 mm
200
-30 Cel
VFBGA
BGA200,12X22,32/25
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
.95 mm
1.17 V
1.06 V
1.1
MT53B512M32D2NP-062WT:C
Micron Technology's MT53B512M32D2NP-062WT:C is a DDR4 DRAM with 512MX32 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a max clock frequency of 1600 MHz.
512MX32
MT40A1G16RC-062EIT:B
Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT40A2G8VA-062E:B
Micron Technology's MT40A2G8VA-062E:B is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data processing in devices like servers and high-performance computers.
MT40A4G4VA-062E:B
Micron Technology's MT40A4G4VA-062E:B is a DDR4 DRAM with 4GX4 organization, operating at 1600 MHz. It features a thin profile grid array package with 78 terminals and operates synchronously. Ideal for applications requiring high-speed memory access in devices like servers and high-performance computing systems.
MT40A8G4BAF-062E:B
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;
BGA78,9X11,32
277 mA
MT40A4G8BAF-062E:B
Micron Technology's MT40A4G8BAF-062E:B is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a density of 34359738368 bits.
4GX8
245 mA
MT40A512M16LY-062EAAT:E
Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
275 mA
MT40A2G8JC-062E:E
Micron Technology's MT40A2G8JC-062E:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access such as servers, workstations, and high-performance computing systems.
MT40A4G4JC-062E:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT40A1G16KH-062EAAT:E
Micron Technology's MT40A1G16KH-062EAAT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for automotive applications due to AEC-Q100 screening level and wide temperature range (-40 to 105°C).
.043 Amp
299 mA
AS4C512M16D4-75BINTR
Alliance Memory's AS4C512M16D4-75BINTR is a DDR4 DRAM with 512MX16 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory with a max clock frequency of 1333 MHz.
4,8
.135 Amp
430 mA
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