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NXP Semiconductors Varactor Diodes 52

Varactor Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Variable Capacitance Diode Classification
BB131,135 by NXP Semiconductors

BB131,135

NXP Semiconductors

NXP Semiconductors' BB131,135 Varactor Diodes are surface mountable with a nominal capacitance of 12pF. These diodes have a max reverse voltage of 30V and can withstand peak reflow temp of 260°C for up to 30s. Ideal for applications requiring variable capacitance like RF tuning circuits.

12 pF

VARIABLE CAPACITANCE DIODE

e3

1

260

30 V

Varactors

YES

TIN

30

BB179BLX,315 by NXP Semiconductors

BB179BLX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: Tin (Sn); Nominal Diode Capacitance: 19.1 pF; JESD-609 Code: e3;

19.1 pF

VARIABLE CAPACITANCE DIODE

e3

Varactors

YES

Tin (Sn)

BB182,135 by NXP Semiconductors

BB182,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: Tin (Sn);

52 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

Tin (Sn)

BB182,315 by NXP Semiconductors

BB182,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

52 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

Tin (Sn)

BB182,335 by NXP Semiconductors

BB182,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: Tin (Sn); Nominal Diode Capacitance: 52 pF;

52 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

Tin (Sn)

BB171X by NXP Semiconductors

BB171X

NXP Semiconductors

BB171X by NXP Semiconductors is a single-config varactor diode with an abrupt variable capacitance classification. It operates in the very high frequency band and has a max reverse current of 0.01 uA. This diode is commonly used in applications requiring small outline packages and high operating temperatures up to 125 °C.

32 V

SINGLE

8.77 %

20.6

57 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

IEC-60134

32 V

.01 uA

30 V

YES

GULL WING

DUAL

ABRUPT

BB149,135 by NXP Semiconductors

BB149,135

NXP Semiconductors

BB149,135 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 18.75 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 30 V. Ideal for tuning circuits and RF applications, it comes in a compact surface mount package.

SINGLE

4 %

8.2

18.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB149A,135 by NXP Semiconductors

BB149A,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Nominal Diode Capacitance: 21.26 pF; Maximum Repetitive Peak Reverse Voltage: 30 V;

21.26 pF

VARIABLE CAPACITANCE DIODE

e3

30 V

Varactors

YES

TIN

BB178,315 by NXP Semiconductors

BB178,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Repetitive Peak Reverse Voltage: 32 V; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE

e3

32 V

Varactors

YES

TIN

BB178,335 by NXP Semiconductors

BB178,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Repetitive Peak Reverse Voltage: 32 V; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE

e3

32 V

Varactors

YES

TIN

BB179,315 by NXP Semiconductors

BB179,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; Nominal Diode Capacitance: 18.22 pF; Terminal Finish: TIN; JESD-609 Code: e3;

18.22 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB179,335 by NXP Semiconductors

BB179,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Nominal Diode Capacitance: 18.22 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3;

18.22 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB179B,135 by NXP Semiconductors

BB179B,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 18.22 pF; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Repetitive Peak Reverse Voltage: 35 V;

18.22 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB179B,335 by NXP Semiconductors

BB179B,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 18.22 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: TIN;

18.22 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB181,135 by NXP Semiconductors

BB181,135

NXP Semiconductors

BB181,135 by NXP Semiconductors is a surface mount varactor diode ideal for tuning and frequency modulation applications. It features a max reverse voltage of 30V, peak reflow temp of 260 °C, and withstands up to 30s at peak reflow. Perfect for RF circuits!

VARIABLE CAPACITANCE DIODE

e3

1

260

30 V

Varactors

YES

TIN

30

BB187,135 by NXP Semiconductors

BB187,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; JESD-609 Code: e3; Maximum Repetitive Peak Reverse Voltage: 35 V; Terminal Finish: TIN;

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB187,315 by NXP Semiconductors

BB187,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; Terminal Finish: TIN; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB198,115 by NXP Semiconductors

BB198,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 26.75 pF; Maximum Repetitive Peak Reverse Voltage: 20 V; JESD-609 Code: e3; Terminal Finish: MATTE TIN;

26.75 pF

VARIABLE CAPACITANCE DIODE

e3

1

20 V

Varactors

YES

MATTE TIN

BB174LXYL by NXP Semiconductors

BB174LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

7.85 %

8.45

19.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

IEC-60134

30 V

Varactors

YES

NO LEAD

DUAL

ABRUPT

BB173LXYL by NXP Semiconductors

BB173LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

32 V

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

IEC-60134

32 V

Varactors

YES

NO LEAD

DUAL

ABRUPT

BB135,135 by NXP Semiconductors

BB135,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

8.9

19.25 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

30 V

.01 uA

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB141,115 by NXP Semiconductors

BB141,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.65

4.2 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

NOT APPLICABLE

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

BB143,115 by NXP Semiconductors

BB143,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

2.1

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

NOT APPLICABLE

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

BB145,115 by NXP Semiconductors

BB145,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

SINGLE

2

6.9 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

NOT APPLICABLE

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

BB148,135 by NXP Semiconductors

BB148,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

14.5

39.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

.01 uA

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB149,115 by NXP Semiconductors

BB149,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

4 %

8.2

18.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB149A,115 by NXP Semiconductors

BB149A,115

NXP Semiconductors

BB149A,115 by NXP Semiconductors is a varactor diode with a capacitance of 19.74 pF and breakdown voltage of 30 V. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as tuning circuits in RF communication systems. The diode comes in a small outline package with gull wing terminals, making it ideal for surface mount designs.

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

7.7 %

8.45

19.74 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB152,115 by NXP Semiconductors

BB152,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

8.77 %

20.6

57 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

GULL WING

DUAL

BB153,115 by NXP Semiconductors

BB153,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

32 V

Varactors

YES

TIN

GULL WING

DUAL

BB153,135 by NXP Semiconductors

BB153,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

32 V

Varactors

YES

TIN

GULL WING

DUAL

BB156,115 by NXP Semiconductors

BB156,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

10 %

2.7

16 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB156,135 by NXP Semiconductors

BB156,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

10 %

2.7

16 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

Tin (Sn)

GULL WING

DUAL

30

BB178,115 by NXP Semiconductors

BB178,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

32 V

Varactors

YES

TIN

FLAT

DUAL

BB178,135 by NXP Semiconductors

BB178,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

32 V

Varactors

YES

TIN

FLAT

DUAL

BB179,115 by NXP Semiconductors

BB179,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

8.45

19.74 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB179,135 by NXP Semiconductors

BB179,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

8.45

19.74 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB179B,115 by NXP Semiconductors

BB179B,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

4.66 %

8.45

19.11 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB182,115 by NXP Semiconductors

BB182,115

NXP Semiconductors

BB182,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 20.6 and breakdown voltage of 32V. It operates in the very high frequency band, suitable for applications requiring variable capacitance like tuning circuits. This single-configured diode comes in a small outline package with dual terminals and can withstand temperatures from -55 to 125°C.

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

8.77 %

20.6

57 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB187,115 by NXP Semiconductors

BB187,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

11

29.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL

BB200,215 by NXP Semiconductors

BB200,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

18 V

COMMON CATHODE, 2 ELEMENTS

6 %

5

70 pF

SILICON

VARIABLE CAPACITANCE DIODE

TO-236AB

R-PDSO-G3

e3

2

3

85 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

TIN

GULL WING

DUAL

BB804,215 by NXP Semiconductors

BB804,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

18 V

COMMON CATHODE, 2 ELEMENTS

5.08 %

1.65

44.25 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

18 V

.02 uA

16 V

Varactors

YES

MATTE TIN

GULL WING

DUAL

BBY31,215 by NXP Semiconductors

BBY31,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

11.11 %

16.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G3

e3

1

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

.01 uA

28 V

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

BB208-03,135 by NXP Semiconductors

BB208-03,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB208-03,115 by NXP Semiconductors

BB208-03,115

NXP Semiconductors

BB208-03,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 3.7 and a max reverse voltage of 10V. It operates b/w -55°C to 125°C, has a nominal capacitance of 10.1pF, and is designed for applications requiring variable capacitance diodes in small outline packages.

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB208-02,135 by NXP Semiconductors

BB208-02,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

FLAT

DUAL

30

BB207,235 by NXP Semiconductors

BB207,235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

6.17 %

2.6

81 pF

SILICON

VARIABLE CAPACITANCE DIODE

TO-236AB

R-PDSO-G3

e3

1

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB202LX,315 by NXP Semiconductors

BB202LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

8.59 %

2.5

30.85 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PBCC-N2

e3

1

2

85 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Not Qualified

6 V

Varactors

YES

TIN

NO LEAD

BOTTOM

BB184,135 by NXP Semiconductors

BB184,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

13 V

SINGLE

9.29 %

6

14 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

13 V

Varactors

YES

TIN

FLAT

DUAL