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YES Varactor Diodes 148

Varactor Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Variable Capacitance Diode Classification
BBY52-02W-E6327 by Infineon Technologies

BBY52-02W-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 1.85 pF; Maximum Repetitive Peak Reverse Voltage: 7 V; Moisture Sensitivity Level (MSL): 1;

1.85 pF

VARIABLE CAPACITANCE DIODE

1

260

7 V

Varactors

YES

BBY57-02V-E6327 by Infineon Technologies

BBY57-02V-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 10 V; Nominal Diode Capacitance: 17.5 pF; Moisture Sensitivity Level (MSL): 1;

17.5 pF

VARIABLE CAPACITANCE DIODE

1

260

10 V

Varactors

YES

BBY53-02W-E6327 by Infineon Technologies

BBY53-02W-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 5.3 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

5.3 pF

VARIABLE CAPACITANCE DIODE

1

260

6 V

Varactors

YES

BBY58-02W-E6327 by Infineon Technologies

BBY58-02W-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 10 V; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 18.3 pF;

18.3 pF

VARIABLE CAPACITANCE DIODE

1

150 Cel

-55 Cel

260

10 V

Varactors

YES

BB555-E7902 by Infineon Technologies

BB555-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 18.7 pF; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 35 V; Moisture Sensitivity Level (MSL): 1;

18.7 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB555-E7912 by Infineon Technologies

BB555-E7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 18.7 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

18.7 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB555-02VE7902 by Infineon Technologies

BB555-02VE7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 18.7 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; Peak Reflow Temperature (C): 260;

18.7 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB555-02VE7912 by Infineon Technologies

BB555-02VE7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 18.7 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

18.7 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB131,135 by NXP Semiconductors

BB131,135

NXP Semiconductors

NXP Semiconductors' BB131,135 Varactor Diodes are surface mountable with a nominal capacitance of 12pF. These diodes have a max reverse voltage of 30V and can withstand peak reflow temp of 260°C for up to 30s. Ideal for applications requiring variable capacitance like RF tuning circuits.

12 pF

VARIABLE CAPACITANCE DIODE

e3

1

260

30 V

Varactors

YES

TIN

30

BB179BLX,315 by NXP Semiconductors

BB179BLX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: Tin (Sn); Nominal Diode Capacitance: 19.1 pF; JESD-609 Code: e3;

19.1 pF

VARIABLE CAPACITANCE DIODE

e3

Varactors

YES

Tin (Sn)

BB182,135 by NXP Semiconductors

BB182,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: Tin (Sn);

52 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

Tin (Sn)

BB182,315 by NXP Semiconductors

BB182,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

52 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

Tin (Sn)

BB182,335 by NXP Semiconductors

BB182,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: Tin (Sn); Nominal Diode Capacitance: 52 pF;

52 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

Tin (Sn)

BB659-E7902 by Infineon Technologies

BB659-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; Nominal Diode Capacitance: 38.3 pF; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

38.3 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB565-E7902 by Infineon Technologies

BB565-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 20 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

20 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB565-E7908 by Infineon Technologies

BB565-E7908

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 20 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; Moisture Sensitivity Level (MSL): 1;

20 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB659CE7902 by Infineon Technologies

BB659CE7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 39 pF; Maximum Repetitive Peak Reverse Voltage: 30 V;

39 pF

VARIABLE CAPACITANCE DIODE

1

260

30 V

Varactors

YES

BB659CE7912 by Infineon Technologies

BB659CE7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 39 pF; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 30 V;

39 pF

VARIABLE CAPACITANCE DIODE

1

260

30 V

Varactors

YES

BB659C-02VE7902 by Infineon Technologies

BB659C-02VE7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 39 pF; Maximum Repetitive Peak Reverse Voltage: 30 V; Peak Reflow Temperature (C): 260;

39 pF

VARIABLE CAPACITANCE DIODE

1

260

30 V

Varactors

YES

BB659C-02VE7912 by Infineon Technologies

BB659C-02VE7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 30 V; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 39 pF;

39 pF

VARIABLE CAPACITANCE DIODE

1

260

30 V

Varactors

YES

BB664-E7902 by Infineon Technologies

BB664-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 35 V; Nominal Diode Capacitance: 41.8 pF;

41.8 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB689-E7902 by Infineon Technologies

BB689-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 56.5 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

56.5 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB689-E7908 by Infineon Technologies

BB689-E7908

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Maximum Repetitive Peak Reverse Voltage: 35 V; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 56.5 pF;

56.5 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB689-E7903 by Infineon Technologies

BB689-E7903

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 56.5 pF; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 35 V; Moisture Sensitivity Level (MSL): 1;

56.5 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB857-E7902 by Infineon Technologies

BB857-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Maximum Repetitive Peak Reverse Voltage: 35 V; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 6.6 pF;

6.6 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

JDV2S10FS(TPL3) by Toshiba

JDV2S10FS(TPL3)

Toshiba

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 10 V; Variable Capacitance Diode Classification: ABRUPT; Package Style (Meter): SMALL OUTLINE;

VARIABLE CAPACITANCE DIODE

SMALL OUTLINE

10 V

Varactors

YES

ABRUPT

1SV282(TPH3,F) by Toshiba

1SV282(TPH3,F)

Toshiba

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 34 V; Package Style (Meter): SMALL OUTLINE; Variable Capacitance Diode Classification: ABRUPT; Nominal Diode Capacitance: 35.5 pF;

35.5 pF

VARIABLE CAPACITANCE DIODE

SMALL OUTLINE

34 V

Varactors

YES

ABRUPT

BB171X by NXP Semiconductors

BB171X

NXP Semiconductors

BB171X by NXP Semiconductors is a single-config varactor diode with an abrupt variable capacitance classification. It operates in the very high frequency band and has a max reverse current of 0.01 uA. This diode is commonly used in applications requiring small outline packages and high operating temperatures up to 125 °C.

32 V

SINGLE

8.77 %

20.6

57 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

IEC-60134

32 V

.01 uA

30 V

YES

GULL WING

DUAL

ABRUPT

SMV1206-079LF by Skyworks Solutions

SMV1206-079LF

Skyworks Solutions

SMV1206-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 11.6pF capacitance, 22V breakdown voltage, and -55 to 125°C operating range. Ideal for RF applications in small outline packages requiring variable capacitance control.

22 V

SINGLE

8.62 %

4.45

11.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.25 W

Not Qualified

YES

FLAT

DUAL

NOT SPECIFIED

HYPERABRUPT

BB149,135 by NXP Semiconductors

BB149,135

NXP Semiconductors

BB149,135 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 18.75 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 30 V. Ideal for tuning circuits and RF applications, it comes in a compact surface mount package.

SINGLE

4 %

8.2

18.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB149A,135 by NXP Semiconductors

BB149A,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Nominal Diode Capacitance: 21.26 pF; Maximum Repetitive Peak Reverse Voltage: 30 V;

21.26 pF

VARIABLE CAPACITANCE DIODE

e3

30 V

Varactors

YES

TIN

BB178,315 by NXP Semiconductors

BB178,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Repetitive Peak Reverse Voltage: 32 V; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE

e3

32 V

Varactors

YES

TIN

BB178,335 by NXP Semiconductors

BB178,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Repetitive Peak Reverse Voltage: 32 V; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE

e3

32 V

Varactors

YES

TIN

BB179,315 by NXP Semiconductors

BB179,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; Nominal Diode Capacitance: 18.22 pF; Terminal Finish: TIN; JESD-609 Code: e3;

18.22 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB179,335 by NXP Semiconductors

BB179,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Nominal Diode Capacitance: 18.22 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3;

18.22 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB179B,135 by NXP Semiconductors

BB179B,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 18.22 pF; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Repetitive Peak Reverse Voltage: 35 V;

18.22 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB179B,335 by NXP Semiconductors

BB179B,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 18.22 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: TIN;

18.22 pF

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB181,135 by NXP Semiconductors

BB181,135

NXP Semiconductors

BB181,135 by NXP Semiconductors is a surface mount varactor diode ideal for tuning and frequency modulation applications. It features a max reverse voltage of 30V, peak reflow temp of 260 °C, and withstands up to 30s at peak reflow. Perfect for RF circuits!

VARIABLE CAPACITANCE DIODE

e3

1

260

30 V

Varactors

YES

TIN

30

BB187,135 by NXP Semiconductors

BB187,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; JESD-609 Code: e3; Maximum Repetitive Peak Reverse Voltage: 35 V; Terminal Finish: TIN;

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB187,315 by NXP Semiconductors

BB187,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; Terminal Finish: TIN; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE

e3

35 V

Varactors

YES

TIN

BB198,115 by NXP Semiconductors

BB198,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 26.75 pF; Maximum Repetitive Peak Reverse Voltage: 20 V; JESD-609 Code: e3; Terminal Finish: MATTE TIN;

26.75 pF

VARIABLE CAPACITANCE DIODE

e3

1

20 V

Varactors

YES

MATTE TIN

SMV2025-040LF by Skyworks Solutions

SMV2025-040LF

Skyworks Solutions

SMV2025-040LF by Skyworks Solutions is a single hyperabrupt varactor diode with 4.65 pF nominal capacitance, suitable for ultra high frequency applications. It operates b/w -55 to 175 °C and has a max power dissipation of 0.25 W, making it ideal for surface mount designs in RF circuits.

20 V

SINGLE

9.68 %

2.2

4.65 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PBCC-N2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

.25 W

20 V

.02 uA

19 V

YES

NO LEAD

BOTTOM

NOT SPECIFIED

HYPERABRUPT

BB659C-02V-H7902 by Infineon Technologies

BB659C-02V-H7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 39 pF; Maximum Repetitive Peak Reverse Voltage: 30 V; Moisture Sensitivity Level (MSL): 1;

39 pF

VARIABLE CAPACITANCE DIODE

e3

1

260

30 V

Varactors

YES

MATTE TIN

SMV1770-040LF by Skyworks Solutions

SMV1770-040LF

Skyworks Solutions

SMV1770-040LF by Skyworks Solutions is a surface mount varactor diode with 23.6 pF capacitance, 12 V peak reverse voltage, and silicon element material. It is ideal for RF applications requiring variable capacitance diodes that can withstand peak reflow temperature of 260°C.

23.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

1

260

12 V

Varactors

YES

BB833E6327HTSA1 by Infineon Technologies

BB833E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

35 V

SINGLE

8.11 %

11

9.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

S BAND

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

TIN

GULL WING

DUAL

BB545E7904HTSA1 by Infineon Technologies

BB545E7904HTSA1

Infineon Technologies

Infineon's BB545E7904HTSA1 is a single varactor diode with 20pF capacitance, ideal for ultra high frequency applications. With a temperature range of -55 to 150°C, it features gull wing terminals and silicon element material. This surface mount diode has a small outline package shape and is suitable for RF tuning in various electronic devices.

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

TIN

GULL WING

DUAL

BB55502VH7902XTSA1 by Infineon Technologies

BB55502VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

30 V

SINGLE

6.67 %

6

18.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB555H7902XTSA1 by Infineon Technologies

BB555H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

30 V

SINGLE

6.67 %

6

18.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL