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DUAL Transient Suppression Devices 2,252

Transient Suppression Devices
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
SMF17A-T13 by Littelfuse

SMF17A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

20.9 V

18.9 V

19.9 V

27.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

17 V

1 uA

17 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF22A-T13 by Littelfuse

SMF22A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

26.9 V

24.4 V

25.65 V

35.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

22 V

1 uA

22 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMF36A-T13 by Littelfuse

SMF36A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

44.2 V

40 V

42.1 V

58.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

36 V

1 uA

36 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF43A-T13 by Littelfuse

SMF43A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

52.8 V

47.8 V

50.3 V

69.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

43 V

1 uA

43 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF45A-T13 by Littelfuse

SMF45A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

55.3 V

50 V

52.65 V

72.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

45 V

1 uA

45 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF51A-T13 by Littelfuse

SMF51A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

62.7 V

56.7 V

59.7 V

82.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

51 V

1 uA

51 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF54A-T13 by Littelfuse

SMF54A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

66.3 V

60 V

63.15 V

87.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

54 V

1 uA

54 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF58A-T13 by Littelfuse

SMF58A-T13

Littelfuse

SMF58A-T13 by Littelfuse is a unidirectional avalanche diode with 1000W peak power dissipation, 67.8V breakdown voltage, and 1uA max reverse current. Ideal for transient suppression in electronics, it operates b/w -65 to 150°C and complies with IEC-61000-4-2, 4-4 standards.

EXCELLENT CLAMPING CAPABILITY

71.2 V

64.4 V

67.8 V

93.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

58 V

1 uA

58 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF60A-T13 by Littelfuse

SMF60A-T13

Littelfuse

SMF60A-T13 by Littelfuse is a unidirectional avalanche diode with 70.2V breakdown voltage, 1uA reverse current, and 1000W peak power dissipation. Ideal for transient suppression in electronics, it operates b/w -65°C to 150°C and complies with IEC-61000-4-2, 4-4 standards.

EXCELLENT CLAMPING CAPABILITY

73.7 V

66.7 V

70.2 V

96.8 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

60 V

1 uA

60 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF64A-T13 by Littelfuse

SMF64A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

78.6 V

71.1 V

74.85 V

103 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

64 V

1 uA

64 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF70A-T13 by Littelfuse

SMF70A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

86 V

77.8 V

81.9 V

113 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

70 V

1 uA

70 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF75A-T13 by Littelfuse

SMF75A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

92.1 V

83.3 V

87.7 V

121 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

75 V

1 uA

75 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF78A-T13 by Littelfuse

SMF78A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

95.8 V

86.7 V

91.25 V

126 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

78 V

1 uA

78 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMF85A-T13 by Littelfuse

SMF85A-T13

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

104 V

94.4 V

99.2 V

137 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

IEC-61000-4-2, 4-4

85 V

1 uA

85 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

USBULC6-2P6 by STMicroelectronics

USBULC6-2P6

STMicroelectronics

USBULC6-2P6 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for surface mount applications. It features a max operating temp of 125 °C, a min breakdown voltage of 6V, and complies with IEC-61000-4-2 standards. Ideal for protecting sensitive electronics from voltage spikes.

HIGH RELIABILITY, ULTRA LOW CAPACITANCE

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F6

1

6

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

IEC-61000-4-2

5 V

YES

AVALANCHE

FLAT

DUAL

AK3-208C-12 by Littelfuse

AK3-208C-12

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

246 V

223 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDIP-T2

e4

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

208 V

NO

AVALANCHE

SILVER

THROUGH-HOLE

DUAL

30

AK3-208C by Littelfuse

AK3-208C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

246 V

223 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDIP-T2

e4

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

208 V

NO

AVALANCHE

SILVER

THROUGH-HOLE

DUAL

30

LXES15AAA1-153 by Murata Manufacturing

LXES15AAA1-153

Murata Manufacturing

Murata's LXES15AAA1-153 is a bidirectional avalanche diode with silicon element, operating from -40 to 85°C. It meets IEC-61000-4-2 standard for transient suppression in electronic circuits. With dual terminals and no lead form, it is ideal for surface mount applications requiring protection against voltage spikes.

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-CDSO-N2

1

1

2

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

IEC-61000-4-2

YES

AVALANCHE

NO LEAD

DUAL

CTES033V3-G by Comchip Technology

CTES033V3-G

Comchip Technology

CTES033V3-G by Comchip Tech: Transient Suppressor Diode with 300W peak power dissipation, 4V breakdown voltage, and 8V max clamping voltage. Commonly used for surge protection in electronic circuits due to its avalanche technology and unidirectional polarity.

4 V

4 V

8 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

300 W

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

3.3 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

30

ESD5V0S4USH6327XTSA1 by Infineon Technologies

ESD5V0S4USH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

7.7 V

5.7 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

130 W

4

6

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

5 V

YES

AVALANCHE

GULL WING

DUAL

ESD8118MUTAG by Onsemi

ESD8118MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 10; Surface Mount: YES; Package Shape: RECTANGULAR;

ULTRA LOW CAPACITANCE

4 V

5 V

11.4 V

COMMON ANODE, 8 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-N10

1

8

10

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2

3.3 V

1 uA

3.3 V

YES

AVALANCHE

NICKEL GOLD PALLADIUM

NO LEAD

DUAL

30

SMA6J18AR3G by Taiwan Semiconductor

SMA6J18AR3G

Taiwan Semiconductor

SMA6J18AR3G by Taiwan Semiconductor is a unidirectional avalanche diode with 18V max reverse voltage and 600W peak power dissipation. Ideal for transient suppression in automotive applications due to AEC-Q101 standard compliance and -55 to 175 °C operating temperature range.

EXCELLENT CLAMPING CAPABILITY

22.1 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AC

R-PDSO-C2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

4 W

AEC-Q101

18 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

1KSMB10AR5G by Taiwan Semiconductor

1KSMB10AR5G

Taiwan Semiconductor

1KSMB10AR5G by Taiwan Semiconductor is a single transient suppression device with 1000W power dissipation. It operates b/w -55°C to 175°C, ideal for protecting electronic circuits in automotive applications. Its unidirectional diode element and avalanche technology ensure reliable performance.

EXCELLENT CLAMPING CAPABILITY

10.5 V

9.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

5 W

AEC-Q101

8.55 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

1KSMB12CAR5G by Taiwan Semiconductor

1KSMB12CAR5G

Taiwan Semiconductor

1KSMB12CAR5G by Taiwan Semiconductor is a single transient suppression device with a max power dissipation of 5W. It operates in temperatures ranging from -55°C to 175°C, making it suitable for various applications requiring protection against voltage spikes. With a bidirectional polarity and silicon diode element material, this device is ideal for use in automotive electronics meeting AEC-Q101 standards.

EXCELLENT CLAMPING CAPABILITY

12.6 V

11.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

BIDIRECTIONAL

5 W

AEC-Q101

10.2 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMF20A-T1 by Won-top Electronics

SMF20A-T1

Won-top Electronics

SMF20A-T1 by Won-top Electronics is a unidirectional Trans Voltage Suppressor Diode with 20V max repetitive peak reverse voltage. It has a max power dissipation of 0.4W and operates b/w -55°C to 150°C. Ideal for transient suppression in electronic circuits due to its avalanche technology.

EXCELLENT CLAMPING CAPABILITY

24.5 V

22.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e0

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

.4 W

20 V

YES

AVALANCHE

TIN LEAD

FLAT

DUAL

SZSL24T1G by Onsemi

SZSL24T1G

Onsemi

SZSL24T1G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 55V. It has a breakdown voltage of 27.85V and can handle a max non-repetitive peak reverse power dissipation of 300W. Ideal for transient suppression applications in automotive electronics and industrial equipment due to its AEC-Q101 compliance and avalanche technology.

LOW CAPACITANCE

29 V

26.7 V

27.85 V

55 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

TO-236

R-PDSO-G3

e3

1

300 W

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.225 W

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

24 V

1 uA

24 V

YES

AVALANCHE

TIN

GULL WING

DUAL

30

LXES15AAA1-133 by Murata Manufacturing

LXES15AAA1-133

Murata Manufacturing

Murata's LXES15AAA1-133 is a bidirectional avalanche diode with silicon element. It operates b/w -40 to 85°C, meeting IEC-61000-4-2 standards. Ideal for transient suppression in electronic circuits due to its compact rectangular package and dual terminals.

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-CDSO-N2

1

2

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

BIDIRECTIONAL

IEC-61000-4-2

YES

AVALANCHE

NO LEAD

DUAL

NOT SPECIFIED

SMA6J18AHR3G by Taiwan Semiconductor

SMA6J18AHR3G

Taiwan Semiconductor

SMA6J18AHR3G by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with 18V max repetitive peak reverse voltage. It has a 600W non-repetitive peak reverse power dissipation and operates b/w -55°C to 175°C. Ideal for transient suppression in automotive electronics due to AEC-Q101 reference standard compliance.

EXCELLENT CLAMPING CAPABILITY

22.1 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AC

R-PDSO-C2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

4 W

AEC-Q101

18 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMAJ54AHE3-TP by Micro Commercial Components

SMAJ54AHE3-TP

Micro Commercial Components

Micro Commercial Components' SMAJ54AHE3-TP is a unidirectional Trans Voltage Suppressor Diode with 54V VRWM, 400W Pd, and 87.1V Vc. It's ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and UL recognition. The diode operates b/w -55°C to 175°C, making it suitable for various temperature conditions.

PRSM-MIN

66.3 V

60 V

87.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AC

R-PDSO-C2

e3

1

400 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1.5 W

AEC-Q101; UL RECOGNIZED

54 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

10

SMBJ160D-M3/H by Vishay Intertechnology

SMBJ160D-M3/H

Vishay Intertechnology

Vishay Intertechnology's SMBJ160D-M3/H is a unidirectional Trans Voltage Suppressor Diode with 160V peak reverse voltage and 600W power dissipation. Ideal for transient suppression applications, it operates b/w -55°C to 150°C, featuring a matte tin finish and avalanche technology in a small outline package.

EXCELLENT CLAMPING CAPABILITY

194 V

181 V

187.5 V

256 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

160 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMBJ40AHR5G by Taiwan Semiconductor

SMBJ40AHR5G

Taiwan Semiconductor

SMBJ40AHR5G by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with 40V max repetitive peak reverse voltage. It features a 600W non-repetitive peak reverse power dissipation and operates b/w -55 to 150°C. Ideal for transient suppression in various electronic applications.

EXCELLENT CLAMPING CAPABILITY

49.1 V

44.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

3 W

AEC-Q101

40 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMBJ58AHR5G by Taiwan Semiconductor

SMBJ58AHR5G

Taiwan Semiconductor

SMBJ58AHR5G by Taiwan Semiconductor is a single transient suppression device with 600W peak power dissipation. It features a unidirectional diode element made of silicon, ideal for avalanche technology applications. With a breakdown voltage range of 64.4V to 71.2V, it is suitable for protecting electronic components in automotive and industrial settings.

EXCELLENT CLAMPING CAPABILITY

71.2 V

64.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

3 W

AEC-Q101

58 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMCJ14AHR7G by Taiwan Semiconductor

SMCJ14AHR7G

Taiwan Semiconductor

SMCJ14AHR7G by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with 1500W power dissipation, ideal for transient suppression applications. It operates b/w -55 to 150 °C and has a breakdown voltage of 17.2V, making it suitable for protecting electronic circuits from voltage spikes.

EXCELLENT CLAMPING CAPABILITY

17.2 V

15.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

e3

1

1500 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

AEC-Q101

14 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

TVS4201MR6T1G by Onsemi

TVS4201MR6T1G

Onsemi

TVS4201MR6T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 500W power dissipation. It operates b/w -40 to 125 °C and has a breakdown voltage of 6V. Ideal for transient suppression in electronic circuits, it meets IEC-61000-4-2, 4-4, 4-5 standards.

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

e3

1

500 W

1

6

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

1KSMB10AHM4G by Taiwan Semiconductor

1KSMB10AHM4G

Taiwan Semiconductor

1KSMB10AHM4G by Taiwan Semiconductor is a single transient suppression device with 1000W power dissipation. It operates b/w -55 to 175 °C and has a breakdown voltage range of 9.5-10.5V, making it ideal for automotive applications requiring high surge protection.

EXCELLENT CLAMPING CAPABILITY

10.5 V

9.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

5 W

AEC-Q101

8.55 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

1KSMB10AHR5G by Taiwan Semiconductor

1KSMB10AHR5G

Taiwan Semiconductor

1KSMB10AHR5G by Taiwan Semiconductor is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 1000W power dissipation, ideal for transient suppression applications. It operates b/w -55 to 175 °C and has a breakdown voltage of 10.5V, making it suitable for protecting sensitive electronics from voltage spikes in various industries.

EXCELLENT CLAMPING CAPABILITY

10.5 V

9.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

AEC-Q101

8.55 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

1KSMB12CAHR5G by Taiwan Semiconductor

1KSMB12CAHR5G

Taiwan Semiconductor

1KSMB12CAHR5G by Taiwan Semiconductor is a Transient Suppression Device with a max power dissipation of 1000W. It has a bidirectional polarity and operates in temperatures ranging from -55 to 175 °C. This diode is commonly used for voltage suppression in various electronic applications.

EXCELLENT CLAMPING CAPABILITY

12.6 V

11.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

BIDIRECTIONAL

5 W

AEC-Q101

10.2 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

1KSMB30CAHR5G by Taiwan Semiconductor

1KSMB30CAHR5G

Taiwan Semiconductor

1KSMB30CAHR5G by Taiwan Semiconductor is a Transient Suppression Device with 1000W power dissipation, operating from -55 to 175°C. It features bidirectional polarity, silicon diode element material, and avalanche technology. Ideal for protecting electronic circuits in automotive applications.

EXCELLENT CLAMPING CAPABILITY

31.5 V

28.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

BIDIRECTIONAL

5 W

AEC-Q101

26.6 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMPC51AN-M3/I by Vishay Intertechnology

SMPC51AN-M3/I

Vishay Intertechnology

Vishay Intertechnology's SMPC51AN-M3/I is a single transient suppression device with 1500W power dissipation. Ideal for protecting circuits from voltage spikes, it has a breakdown voltage of 62.7V and operates b/w -55°C to 150°C. With a compact rectangular package style, it is suitable for surface mount applications in various electronic devices.

EXCELLENT CLAMPING CAPABILITY

62.7 V

56.7 V

CATHODE

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

TO-277A

R-PDSO-F3

e3

1

1500 W

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

6.5 W

51 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

TPC15CAHM3/H by Vishay Intertechnology

TPC15CAHM3/H

Vishay Intertechnology

Vishay Intertechnology TPC15CAHM3/H is a single bidirectional transient suppression diode with 1500W power dissipation. It operates b/w -65°C to 185°C, ideal for automotive applications meeting AEC-Q101 standard. With a breakdown voltage range of 14.3V to 15.8V, it offers reliable protection in compact SMD package.

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

15.8 V

14.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

TO-277A

R-PDSO-F3

e3

1

1500 W

1

3

185 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

BIDIRECTIONAL

AEC-Q101

12.8 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

824520700 by Wurth Elektronik

824520700

Wurth Elektronik

824520700 by Wurth Elektronik is a single transient suppression device with a max power dissipation of 600W. It features a unidirectional diode element made of silicon, suitable for applications requiring protection against voltage spikes. This UL approved device operates b/w -65°C to 150°C and has a breakdown voltage range of 7.78V to 8.6V.

UL APPROVED

8.6 V

7.78 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

600 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

5 W

UL APPROVED

YES

AVALANCHE

C BEND

DUAL

NOT SPECIFIED

824521750 by Wurth Elektronik

824521750

Wurth Elektronik

824521750 by Wurth Elektronik is a single transient suppression device with bidirectional polarity. It features a breakdown voltage range of 8.33-9.21V and operates b/w -65 to 150°C. Ideal for applications requiring avalanche technology in compact outline packages.

UL APPROVED

9.21 V

8.33 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

BIDIRECTIONAL

5 W

UL APPROVED

YES

AVALANCHE

C BEND

DUAL

NOT SPECIFIED

824551102 by Wurth Elektronik

824551102

Wurth Elektronik

Wurth Elektronik 824551102 is a single transient suppression device with 3000W peak power dissipation. It is a bidirectional silicon diode for avalanche technology, UL approved, with breakdown voltage range of 111.15-122.85V. Ideal for protecting electronic circuits in various applications at temperatures from -65 to 150°C.

UL APPROVED

122.85 V

111.15 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

3000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

BIDIRECTIONAL

6.5 W

UL APPROVED

YES

AVALANCHE

C BEND

DUAL

NOT SPECIFIED

824551700 by Wurth Elektronik

824551700

Wurth Elektronik

824551700 by Wurth Elektronik is a single transient suppression device with a max power dissipation of 6.5W and bidirectional polarity. It features an avalanche diode element made of silicon, UL approved, and operates b/w -65 to 150°C. Ideal for protecting electronic circuits from voltage spikes in various applications.

UL APPROVED

8.6 V

7.78 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

3000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

BIDIRECTIONAL

6.5 W

UL APPROVED

YES

AVALANCHE

C BEND

DUAL

NOT SPECIFIED

824540700 by Wurth Elektronik

824540700

Wurth Elektronik

824540700 by Wuerth Elektronik & Kg is a Transient Suppression Device with a max non-repetitive peak reverse power dissipation of 1500W. It has a small outline package style and operates in temperatures ranging from -65°C to 150°C. This diode is UL approved and commonly used for voltage suppression in electronic circuits.

UL APPROVED

8.6 V

7.78 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

1500 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

6.5 W

UL APPROVED

YES

AVALANCHE

C BEND

DUAL

NOT SPECIFIED

SMB10J17AHR5G by Taiwan Semiconductor

SMB10J17AHR5G

Taiwan Semiconductor

SMB10J17AHR5G by Taiwan Semiconductor is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 17V max repetitive peak reverse voltage. It has a 1000W non-repetitive peak reverse power dissipation and operates b/w -55 to 175 °C, making it ideal for transient suppression in automotive applications.

EXCELLENT CLAMPING CAPABILITY

20.9 V

18.9 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

1000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

UNIDIRECTIONAL

5 W

AEC-Q101

17 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SZPACDN004SR by Onsemi

SZPACDN004SR

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

13 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

.95 V

R-PDSO-G3

e3

1

1

4

85 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101, IEC-61000-4-2

YES

AVALANCHE

TIN

GULL WING

DUAL

30

SM30T10CAY by STMicroelectronics

SM30T10CAY

STMicroelectronics

SM30T10CAY by STMicroelectronics is a bidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 3000 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 9.5-10.5 V. This device is perfect for automotive applications due to its AEC-Q101 compliance.

10.5 V

9.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

3000 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

BIDIRECTIONAL

AEC-Q101; IEC-61000-4-2

8.5 V

YES

AVALANCHE

C BEND

DUAL

NOT SPECIFIED