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SMPC51AN-M3/I

Vishay Intertechnology

SMPC51AN-M3/I by Vishay Intertechnology

Vishay Intertechnology's SMPC51AN-M3/I is a single transient suppression device with 1500W power dissipation. Ideal for protecting circuits from voltage spikes, it has a breakdown voltage of 62.7V and operates b/w -55°C to 150°C. With a compact rectangular package style, it is suitable for surface mount applications in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,289 parts In-Stock

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8,289

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Nova Conductors

Japan . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 435 parts In-Stock

1+ parts

$0.059

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435

$0.059

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Aztec Data Supply Inc.

USA . 650 parts In-Stock

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$0.107

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650

$0.107

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Ampacity Inc.

Singapore . 1,551 parts In-Stock

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$1.010

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1,551

$1.010

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AZTECH Wire

Italy . 788 parts In-Stock

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$9.524

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788

$9.524

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Continental Prestige Electronics

USA . 3,956 parts In-Stock

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3,956

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Argo Parts USA

USA . 2,057 parts In-Stock

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2,057

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Discover the powerful protection of Vishay Intertechnology's SMPC51AN-M3/I Transient Suppression Device. With its high-quality construction and advanced technology, this single-configured diode offers unparalleled reliability in safeguarding your electronic devices from voltage spikes. Ideal for a wide range of applications, this device provides peace of mind with its maximum non-repetitive peak reverse power dissipation of 1500 W and minimum breakdown voltage of 56.7 V. Trust Vishay Intertechnology to deliver superior performance and protection for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and resistant to shock and vibrations, ensuring durability and reliability.

Config: SINGLE

The single configuration simplifies the installation process and reduces the chances of errors, making it user-friendly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

The high maximum power dissipation capability allows the device to handle transient surges effectively, providing robust protection to the connected components.

Surface Mount: YES

Being surface mountable makes the device suitable for modern PCB designs, saving space and enabling efficient assembly processes.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the device can function effectively in demanding environmental conditions without compromising performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the device can operate reliably in extreme cold conditions, expanding its applicability across various industries.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides excellent solderability, enhancing the device's connectivity and reliability.

Maximum Breakdown Voltage: 62.7 V

The high maximum breakdown voltage ensures superior protection against voltage spikes, safeguarding sensitive electronic components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode ensures fast response times and effective suppression of voltage transients, making it an ideal choice for transient protection applications.

Diode Element Material: SILICON

Silicon diode elements offer high efficiency and reliability in transient suppression, ensuring long-term performance and protection for connected equipment.

Technical Specifications

Transient Suppression Devices SMPC51AN-M3/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

62.7 V

Minimum Breakdown Voltage:

56.7 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-277A

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Maximum Repetitive Peak Reverse Voltage:

51 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMPC51AN-M3/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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