Loading...

Infineon Technologies PIN Diodes 32

PIN Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Maximum Diode Forward Resistance Diode Resistive Test Current Diode Resistive Test Frequency Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Nominal Minority Carrier Lifetime Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
BAR65-02V-E6327 by Infineon Technologies

BAR65-02V-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Maximum Operating Temperature: 125 Cel; Diode Resistive Test Current: 5 mA; Nominal Minority Carrier Lifetime: .08 us; Nominal Diode Capacitance: .5 pF;

.5 pF

.95 ohm

5 mA

100 MHz

PIN DIODE

.08 us

1

125 Cel

260

0 V

PIN Diodes

YES

BAR67-02V-E6327 by Infineon Technologies

BAR67-02V-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 5 V; Maximum Operating Temperature: 125 Cel; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: .35 pF;

150 V

.35 pF

PIN DIODE

.7 us

1

125 Cel

260

5 V

PIN Diodes

YES

BAR64-02V-E6327 by Infineon Technologies

BAR64-02V-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Maximum Diode Forward Resistance: 20 ohm; Minimum Breakdown Voltage: 150 V; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 125 Cel;

150 V

.17 pF

20 ohm

1 mA

100 MHz

PIN DIODE

1.55 us

1

125 Cel

260

0 V

PIN Diodes

YES

BAR50-02L-E6327 by Infineon Technologies

BAR50-02L-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Maximum Operating Temperature: 125 Cel; Nominal Diode Capacitance: .24 pF; Minimum Breakdown Voltage: 50 V; Nominal Minority Carrier Lifetime: 1.1 us;

50 V

.24 pF

PIN DIODE

1.1 us

125 Cel

260

1 V

PIN Diodes

YES

BAR50-02V-E6327 by Infineon Technologies

BAR50-02V-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Nominal Minority Carrier Lifetime: 1.1 us; Peak Reflow Temperature (C): 260; Minimum Breakdown Voltage: 50 V; Moisture Sensitivity Level (MSL): 1;

50 V

.24 pF

PIN DIODE

1.1 us

1

125 Cel

260

1 V

PIN Diodes

YES

BAR63-02V-E6327 by Infineon Technologies

BAR63-02V-E6327

Infineon Technologies

Infineon's BAR63-02V-E6327 is a PIN diode with 5V reverse test voltage, 150°C max operating temp, and 2 ohm forward resistance. Ideal for RF switches, attenuators, and phase shifters in applications requiring high-speed switching and low capacitance.

50 V

.25 pF

2 ohm

5 mA

100 MHz

PIN DIODE

.075 us

1

150 Cel

260

5 V

PIN Diodes

YES

BAR63-02W-E6327 by Infineon Technologies

BAR63-02W-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Nominal Diode Capacitance: .3 pF; Maximum Operating Temperature: 125 Cel; Minimum Breakdown Voltage: 50 V; Diode Resistive Test Frequency: 100 MHz;

50 V

.3 pF

2 ohm

5 mA

100 MHz

PIN DIODE

.075 us

1

125 Cel

260

5 V

PIN Diodes

YES

BAR63-02W-E6433 by Infineon Technologies

BAR63-02W-E6433

Infineon Technologies

PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 5 V; Minimum Breakdown Voltage: 50 V; Nominal Diode Capacitance: .3 pF; Moisture Sensitivity Level (MSL): 1;

50 V

.3 pF

2 ohm

5 mA

100 MHz

PIN DIODE

.075 us

1

125 Cel

260

5 V

PIN Diodes

YES

BAR64-02LRH-E6433 by Infineon Technologies

BAR64-02LRH-E6433

Infineon Technologies

PIN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: .13 pF; Maximum Operating Temperature: 125 Cel; Maximum Diode Forward Resistance: 20 ohm;

150 V

.13 pF

20 ohm

1 mA

100 MHz

PIN DIODE

1.55 us

1

125 Cel

260

0 V

PIN Diodes

YES

BA595E6327HTSA1 by Infineon Technologies

BA595E6327HTSA1

Infineon Technologies

Infineon's BA595E6327HTSA1 is a PIN diode with 0.4 pF capacitance, 7 ohm forward resistance, and 50V breakdown voltage. Ideal for attenuator and switching applications in medium to L band frequencies. Features small outline package, dual terminals, and positive-intrinsic-negative technology.

ATTENUATOR; SWITCHING

50 V

SINGLE

.4 pF

SILICON

7 ohm

PIN DIODE

MEDIUM FREQUENCY TO L BAND

R-PDSO-G2

e3

1.6 us

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BA595E6433HTMA1 by Infineon Technologies

BA595E6433HTMA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.4 pF

SILICON

7 ohm

PIN DIODE

MEDIUM FREQUENCY TO L BAND

R-PDSO-G2

1.6 us

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

NOT SPECIFIED

BAR61E6327HTSA1 by Infineon Technologies

BAR61E6327HTSA1

Infineon Technologies

Infineon's BAR61E6327HTSA1 is a PIN diode with 0.5 pF capacitance, suitable for high frequency applications like attenuators and switching. It operates at up to 150°C, has a power dissipation of 0.25 W, and features positive-intrinsic-negative technology.

ATTENUATOR; SWITCHING

ANODE AND CATHODE

COMPLEX

.5 pF

SILICON

PIN DIODE

HIGH FREQUENCY

R-PDSO-G4

e3

1 us

1

3

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAR88-02VE6327 by Infineon Technologies

BAR88-02VE6327

Infineon Technologies

Infineon's BAR88-02VE6327 is a PIN diode for ultra-high frequency applications. With a max forward resistance of 2.5 ohm, it operates b/w -55 to 150 °C. Suitable for switching purposes, this diode has a small outline package and matte tin terminal finish.

SWITCHING

80 V

SINGLE

.4 pF

.25 pF

SILICON

2.5 ohm

1 mA

100 MHz

PIN DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

.5 us

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

FLAT

DUAL

BAR141E6327HTSA1 by Infineon Technologies

BAR141E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR; SWITCHING

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.5 pF

SILICON

12 ohm

PIN DIODE

HIGH FREQUENCY

R-PDSO-G3

e3

1 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAR151E6327HTSA1 by Infineon Technologies

BAR151E6327HTSA1

Infineon Technologies

Infineon's BAR151E6327HTSA1 is a PIN diode with common cathode, 2 elements, and high frequency band. It has a max diode capacitance of 0.5 pF and is suitable for attenuator and switching applications. The diode operates at up to 150°C, with a forward resistance of 12 ohm and power dissipation of 0.25 W.

LOW DISTORTION

ATTENUATOR; SWITCHING

100 V

COMMON CATHODE, 2 ELEMENTS

.5 pF

SILICON

12 ohm

PIN DIODE

HIGH FREQUENCY

R-PDSO-G3

e3

1 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAR6302WH6327XTSA1 by Infineon Technologies

BAR6302WH6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

50 V

SINGLE

.3 pF

SILICON

2 ohm

PIN DIODE

S BAND

R-PDSO-F2

.075 us

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

FLAT

DUAL

BAR6406E6327HTSA1 by Infineon Technologies

BAR6406E6327HTSA1

Infineon Technologies

PIN DIODE; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Technology: POSITIVE-INTRINSIC-NEGATIVE; Diode Element Material: SILICON; Terminal Finish: TIN;

SILICON

PIN DIODE

e3

1

POSITIVE-INTRINSIC-NEGATIVE

TIN

BAR6704E6327HTSA1 by Infineon Technologies

BAR6704E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

150 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.9 pF

SILICON

1.8 ohm

PIN DIODE

L BAND

R-PDSO-G3

.7 us

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

BAR8802LRHE6327XTSA1 by Infineon Technologies

BAR8802LRHE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

SWITCHING

80 V

SINGLE

.4 pF

SILICON

2.5 ohm

PIN DIODE

L BAND

R-XBCC-N2

e4

.5 us

1

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

GOLD

NO LEAD

BOTTOM

BAR9002LRHE6327XTSA1 by Infineon Technologies

BAR9002LRHE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

80 V

SINGLE

.35 pF

SILICON

2.3 ohm

PIN DIODE

L BAND

R-XBCC-N2

.75 us

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

NOT SPECIFIED

BAR9002LSE6327XTSA1 by Infineon Technologies

BAR9002LSE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

80 V

SINGLE

.35 pF

SILICON

2.3 ohm

PIN DIODE

L BAND

R-XBCC-N2

.75 us

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.15 W

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

BAR88-02VE6127 by Infineon Technologies

BAR88-02VE6127

Infineon Technologies

Infineon's BAR88-02VE6127 is a PIN diode with 0.4 pF capacitance, 2.5 ohm forward resistance, and 80V breakdown voltage. Ideal for L Band applications like switching due to its positive-intrinsic-negative technology and small outline package style. Operating range from -55°C to 125°C makes it versatile for various environments.

LOW DISTORTION

SWITCHING

80 V

SINGLE

.4 pF

SILICON

2.5 ohm

PIN DIODE

L BAND

R-PDSO-F2

e3

.5 us

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

FLAT

DUAL

BA779E6327 by Infineon Technologies

BA779E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 0 V; Diode Resistive Test Current: 1.5 mA; Nominal Minority Carrier Lifetime: 1.6 us; Maximum Diode Forward Resistance: 40 ohm;

50 V

.26 pF

40 ohm

1.5 mA

100 MHz

PIN DIODE

1.6 us

1

150 Cel

0 V

PIN Diodes

YES

BAR65-02LE6327 by Infineon Technologies

BAR65-02LE6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Diode Resistive Test Frequency: 100 MHz; Nominal Minority Carrier Lifetime: .08 us; No. of Elements: 1; Maximum Operating Temperature: 125 Cel;

.5 pF

.95 ohm

5 mA

100 MHz

PIN DIODE

.08 us

1

1

125 Cel

260

0 V

PIN Diodes

YES

BAR50-03WE6327 by Infineon Technologies

BAR50-03WE6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Nominal Diode Capacitance: .24 pF; Minimum Breakdown Voltage: 50 V; Reverse Test Voltage: 1 V; Peak Reflow Temperature (C): 260;

50 V

.24 pF

PIN DIODE

1.1 us

1

1

125 Cel

260

1 V

PIN Diodes

YES

BAR6304WE6327HTSA1 by Infineon Technologies

BAR6304WE6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.3 pF

SILICON

2 ohm

PIN DIODE

S BAND

R-PDSO-G3

.075 us

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

BAR6305WE6327HTSA1 by Infineon Technologies

BAR6305WE6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

50 V

COMMON CATHODE, 2 ELEMENTS

.3 pF

SILICON

2 ohm

PIN DIODE

S BAND

R-PDSO-G3

.075 us

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

BAR6306WE6327HTSA1 by Infineon Technologies

BAR6306WE6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

50 V

COMMON ANODE, 2 ELEMENTS

.3 pF

SILICON

2 ohm

PIN DIODE

S BAND

R-PDSO-G3

.075 us

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

BAR6405WE6433HTMA1 by Infineon Technologies

BAR6405WE6433HTMA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR; SWITCHING

150 V

COMMON CATHODE, 2 ELEMENTS

.35 pF

SILICON

1.35 ohm

PIN DIODE

MEDIUM FREQUENCY TO C BAND

R-PDSO-G3

1.55 us

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.25 W

AEC-Q101

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

NOT SPECIFIED

BAR6405E6433HTMA1 by Infineon Technologies

BAR6405E6433HTMA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

150 V

COMMON CATHODE, 2 ELEMENTS

.35 pF

SILICON

1.35 ohm

PIN DIODE

C BAND

R-PDSO-G3

1.55 us

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.25 W

AEC-Q101

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

NOT SPECIFIED

BAR6405WH6433 by Infineon Technologies

BAR6405WH6433

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

150 V

COMMON CATHODE, 2 ELEMENTS

.35 pF

SILICON

1.35 ohm

PIN DIODE

C BAND

R-PDSO-G3

1.55 us

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.25 W

AEC-Q101

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

NOT SPECIFIED

BAR6406WE6327HTSA1 by Infineon Technologies

BAR6406WE6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

150 V

COMMON ANODE, 2 ELEMENTS

.35 pF

SILICON

1.35 ohm

PIN DIODE

C BAND

R-PDSO-G3

1.55 us

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.25 W

AEC-Q101

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

NOT SPECIFIED