Loading...

2 Microwave Mixer & Detector Diodes 25

Microwave Mixer & Detector Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band Maximum Impedance Minimum Impedance JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Minimum Tangential Signal Sensitivity Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Schottky Barrier Type
BA892H6327XTSA1 by Infineon Technologies

BA892H6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BA892H6433XTMA1 by Infineon Technologies

BA892H6433XTMA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BA892H6127XTSA1 by Infineon Technologies

BA892H6127XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BA892H6770XTSA1 by Infineon Technologies

BA892H6770XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BAT6202WH6327XTSA1 by Infineon Technologies

BAT6202WH6327XTSA1

Infineon Technologies

Infineon's BAT6202WH6327XTSA1 is a Schottky mixer diode with low barrier type, operating at ultra high frequency. With a max forward voltage of 1V and output current of 0.02A, it is suitable for microwave applications requiring small outline surface mount packages. The diode's max power dissipation is 0.1W, making it ideal for high temperature environments up to 150°C.

SINGLE

.6 pF

SILICON

MIXER DIODE

1 V

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

150 Cel

.02 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.1 W

40 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

LOW BARRIER

BA89202VH6327XTSA1 by Infineon Technologies

BA89202VH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

TIN

FLAT

DUAL

TMM6263FILM by STMicroelectronics

TMM6263FILM

STMicroelectronics

TMM6263FILM by STMicroelectronics is a single microwave mixer diode with a Schottky technology. It operates in the very high frequency to ultra high frequency band, featuring a max forward voltage of 1V and max output current of 15A. This glass-packaged diode is ideal for applications requiring high-frequency signal mixing and detection.

MATCHED BATCH AVAILABLE

60 V

ISOLATED

SINGLE

2.2 pF

SILICON

MIXER DIODE

1 V

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

O-LELF-R2

e3

1

1

2

200 Cel

-65 Cel

15 A

GLASS

ROUND

LONG FORM

235

Not Qualified

60 V

.2 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

WRAP AROUND

END

30

BAR28 by STMicroelectronics

BAR28

STMicroelectronics

BAR28 by STMicroelectronics is a Schottky mixer diode designed for very high to ultra-high frequency applications. It features a max operating temp of 200 °C, 2 pF capacitance, and operates within -65°C to 200°C. Ideal for microwave mixing and detection tasks.

MATCHED BATCH AVAILABLE

ISOLATED

SINGLE

2 pF

SILICON

MIXER DIODE

1 V

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

DO-35

O-LALF-W2

e3

.05 A

1

2

200 Cel

-65 Cel

.015 A

GLASS

ROUND

LONG FORM

260

Not Qualified

70 V

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

SMS7621-060 by Skyworks Solutions

SMS7621-060

Skyworks Solutions

Skyworks Solutions SMS7621-060 is a single-config microwave mixer diode with Schottky technology. Operating in K band, it has low barrier Schottky element made of silicon. With 0.18 pF capacitance and 0.075 W power dissipation, it's ideal for surface mount applications requiring high frequency mixing capabilities.

SINGLE

.18 pF

SILICON

MIXER DIODE

K BAND

R-XBCC-N2

1

1

2

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

.075 W

Not Qualified

YES

SCHOTTKY

NO LEAD

BOTTOM

30

LOW BARRIER

SMS7630-061 by Skyworks Solutions

SMS7630-061

Skyworks Solutions

SMS7630-061 by Skyworks Solutions is a single-config microwave mixer diode with Schottky technology. Operating in the K band frequency, it has a max power dissipation of 0.075W and can withstand peak reflow temperature of 260°C. Ideal for applications requiring high-frequency mixing and detection in compact chip carrier packages.

SINGLE

SILICON

MIXER DIODE

K BAND

R-PBCC-N2

1

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

.075 W

Not Qualified

YES

SCHOTTKY

NO LEAD

BOTTOM

40

ZERO BARRIER

HSMS-282Z-BLKG by Broadcom

HSMS-282Z-BLKG

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

.34 V

R-PDSO-G2

e3

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

20

HSMS-282Z-TR1G by Broadcom

HSMS-282Z-TR1G

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

.34 V

R-PDSO-G2

e3

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

20

BA277,115 by NXP Semiconductors

BA277,115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.2 pF

SILICON

MIXER DIODE

1 V

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

150 Cel

-65 Cel

.1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.715 W

Not Qualified

35 V

Rectifier Diodes

YES

TIN

FLAT

DUAL

BA591,115 by NXP Semiconductors

BA591,115

NXP Semiconductors

BA591,115 by NXP Semiconductors is a single microwave mixer diode with very high frequency band. It has a max power dissipation of 0.5W and operates b/w -65°C to 150°C. This small outline diode is ideal for applications requiring high-frequency signal mixing in electronic circuits.

SINGLE

1.05 pF

.8 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

35 V

Varactors

YES

TIN

GULL WING

DUAL

30

MBD301G by Onsemi

MBD301G

Onsemi

MBD301G by Onsemi is a single Schottky mixer diode with ultra high frequency band. It has a max diode capacitance of 1.5 pF and can operate in temperatures ranging from -55 to 125 °C. This cylindrical package diode is ideal for microwave applications requiring high frequency mixing and detection capabilities.

SINGLE

1.5 pF

SILICON

MIXER DIODE

ULTRA HIGH FREQUENCY

TO-226AC

O-PBCY-T2

e1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

Other Diodes

NO

SCHOTTKY

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

MBD701G by Onsemi

MBD701G

Onsemi

MBD701G by Onsemi is a single Schottky mixer diode with ultra high frequency range. It has a max diode capacitance of 1 pF and can operate at temperatures up to 125 °C. This cylindrical package diode is ideal for microwave applications requiring high power dissipation.

SINGLE

1 pF

SILICON

MIXER DIODE

ULTRA HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

Other Diodes

NO

SCHOTTKY

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

HSMS-285Y-BLKG by Broadcom

HSMS-285Y-BLKG

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

L BAND

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

ZERO BARRIER

HSMS-285Y-TR1G by Broadcom

HSMS-285Y-TR1G

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

L BAND

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

ZERO BARRIER

HSMS-286Y-BLKG by Broadcom

HSMS-286Y-BLKG

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

ULTRA HIGH FREQUENCY TO C BAND

R-PDSO-F2

e3

1

1

2

5.8 GHz

.915 GHz

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

Other Diodes

YES

57 dBm

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

HSMS-286Y-TR1G by Broadcom

HSMS-286Y-TR1G

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

ULTRA HIGH FREQUENCY TO C BAND

R-PDSO-F2

e3

1

1

2

5.8 GHz

.915 GHz

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

Other Diodes

YES

57 dBm

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

HSMS-282Y-BLKG by Broadcom

HSMS-282Y-BLKG

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1 pF

SILICON

MIXER DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

HSMS-282Y-TR1G by Broadcom

HSMS-282Y-TR1G

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1 pF

SILICON

MIXER DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

1SS381,L3F by Toshiba

1SS381,L3F

Toshiba

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.2 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

FLAT

DUAL

NOT SPECIFIED

BAT1502ELSE6327XTSA1 by Infineon Technologies

BAT1502ELSE6327XTSA1

Infineon Technologies

BAT1502ELSE6327XTSA1 by Infineon Technologies is a single-config microwave mixer diode for X Band applications. With a max diode capacitance of 0.23 pF, it operates in temperatures ranging from -55 to 150 °C. Utilizing Schottky technology with low barrier type, it has a max forward voltage of 0.41 V and output current of 0.11 A.

4 V

SINGLE

.23 pF

SILICON

MIXER DIODE

.41 V

X BAND

R-XBCC-N2

e4

1

1

2

150 Cel

-55 Cel

.11 A

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.1 W

5 uA

1 V

YES

SCHOTTKY

GOLD

NO LEAD

BOTTOM

LOW BARRIER

BA278,115 by NXP Semiconductors

BA278,115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.2 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.715 W

YES

FLAT

DUAL