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YES Bridge Rectifier Diodes 66

Bridge Rectifier Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
DF201S-G by Comchip Technology

DF201S-G

Comchip Technology

DF201S-G by Comchip Tech is a BRIDGE RECTIFIER DIODE with 4 elements, max output current of 2A, and max repetitive peak reverse voltage of 100V. It operates at up to 150°C, suitable for applications requiring high efficiency rectification in compact spaces.

BRIDGE, 4 ELEMENTS

BRIDGE RECTIFIER DIODE

1.1 V

1

60 A

4

150 Cel

2 A

260

100 V

Bridge Rectifier Diodes

YES

30

DB107S-G by Comchip Technology

DB107S-G

Comchip Technology

Comchip Technology's DB107S-G is a bridge rectifier diode with 4 elements, 1000V reverse test voltage, and 1A max output current. It is used in applications requiring high voltage rectification such as power supplies and battery chargers.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

50 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

1000 V

10 uA

1000 V

YES

GULL WING

DUAL

DF10ST-HF by Comchip Technology

DF10ST-HF

Comchip Technology

BRIDGE RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 1000 V; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): 1.1 V; No. of Elements: 4;

BRIDGE, 4 ELEMENTS

BRIDGE RECTIFIER DIODE

1.1 V

30 A

4

150 Cel

1 A

1000 V

Bridge Rectifier Diodes

YES

DSRHD10-13 by Diodes Incorporated

DSRHD10-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.95 V

R-PDSO-F4

e3

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

1000 V

Bridge Rectifier Diodes

YES

BLANK

MATTE TIN

FLAT

DUAL

30

SBR2A40BLP-13 by Diodes Incorporated

SBR2A40BLP-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

40 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PBCC-N4

e3

1

70 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

AEC-Q101

40 V

YES

MATTE TIN

NO LEAD

BOTTOM

30

SDM1L30BLP-13 by Diodes Incorporated

SDM1L30BLP-13

Diodes Incorporated

SDM1L30BLP-13 by Diodes Inc. is a bridge rectifier diode with a max output current of 1A and a min breakdown voltage of 30V. It is surface mountable and commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.

HIGH RELIABILITY

30 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PBCC-N4

e3

1

50 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

AEC-Q101

30 V

YES

SCHOTTKY

MATTE TIN

NO LEAD

BOTTOM

30

DB104-SG by Surge Components

DB104-SG

Surge Components

DB104-SG by Surge Components is a bridge rectifier diode with 4 elements, max reverse voltage of 400V, and output current of 1A. It is a surface-mount device with gull wing terminals suitable for applications requiring rectification in small outline packages. Operating temperature ranges from -55°C to 150°C, making it ideal for various electronic circuits.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

UL RECOGNIZED

400 V

10 uA

400 V

YES

GULL WING

DUAL

RH02-T by Diodes Incorporated

RH02-T

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

200 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.15 V

R-PDSO-G4

e3

1

30 A

4

1

4

150 Cel

-55 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

200 V

.15 us

Bridge Rectifier Diodes

YES

MATTE TIN

GULL WING

DUAL

CD2320-B1200 by Bourns

CD2320-B1200

Bourns

The Bourns CD2320-B1200 is a bridge rectifier diode with 4 elements, Schottky technology, and a max output current of 1A. It operates b/w -55°C to 175°C, has a reverse test voltage of 200V, and is suitable for applications requiring high efficiency power conversion in compact electronic devices.

LOW POWER LOSS

200 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PDFP-F4

e3

1

30 A

4

1

4

175 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

FLATPACK

260

Not Qualified

200 V

5 uA

200 V

YES

SCHOTTKY

TIN

FLAT

DUAL

10

CD2320-B1600 by Bourns

CD2320-B1600

Bourns

The Bourns CD2320-B1600 is a bridge rectifier diode with 4 elements, Schottky technology, and a max output current of 1A. It operates b/w -55°C to 175°C, has a reverse test voltage of 600V, and is ideal for applications requiring high efficiency power conversion in compact electronic devices.

LOW POWER LOSS

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PDFP-F4

e3

1

30 A

4

1

4

175 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

FLATPACK

260

Not Qualified

600 V

5 uA

600 V

YES

SCHOTTKY

TIN

FLAT

DUAL

10

MB110S-TP by Micro Commercial Components

MB110S-TP

Micro Commercial Components

MB110S-TP by Micro Commercial Components is a Schottky bridge rectifier diode with 4 elements, max output current of 1A, and max repetitive peak reverse voltage of 100V. It operates b/w -55 to 150°C and is ideal for applications requiring high efficiency rectification in compact electronic devices.

100 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.85 V

R-PDSO-G4

e3

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

100 V

100 uA

Bridge Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

MB12S-TP by Micro Commercial Components

MB12S-TP

Micro Commercial Components

MB12S-TP by Micro Commercial Components is a Schottky bridge rectifier diode with 4 elements. It has a max output current of 1A and a min breakdown voltage of 20V. Ideal for applications requiring small outline surface-mount diodes in temperature range -55 to 150°C.

20 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.5 V

R-PDSO-G4

e3

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

20 V

100 uA

Bridge Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

10

MB16S-TP by Micro Commercial Components

MB16S-TP

Micro Commercial Components

MB16S-TP by Micro Commercial Components is a Schottky bridge rectifier diode with 4 elements, max output current of 1A, and max reverse voltage of 60V. Ideal for applications requiring small outline package style, such as power supplies and battery chargers. Operating temp range: -55 to 150°C.

60 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.7 V

R-PDSO-G4

e3

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

60 V

100 uA

Bridge Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

CDNBS04-B08200 by Bourns

CDNBS04-B08200

Bourns

Bourns CDNBS04-B08200 is a bridge rectifier diode with 4 elements, matte tin finish, and max output current of 0.8A. It operates b/w -55°C to 150°C, suitable for applications requiring a max repetitive peak reverse voltage of 200V and non-repetitive peak forward current of 30A in a small outline package style.

HIGH RELIABILITY

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

e3

1

30 A

4

1

4

150 Cel

-55 Cel

.8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

200 V

YES

MATTE TIN

GULL WING

DUAL

DLPA004-7 by Diodes Incorporated

DLPA004-7

Diodes Incorporated

DLPA004-7 by Diodes Inc. is a bridge rectifier diode with 4 elements, max reverse recovery time of 3 us, and max reverse current of 50 uA. Ideal for applications requiring small outline package style, it operates b/w -65 to 150 °C and has a peak reflow temp of 260 C.

HIGH RELIABILITY

85 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.8 V

R-PDSO-G6

e3

1

3.5 A

4

1

6

150 Cel

-65 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

85 V

50 uA

3 us

70 V

Other Diodes

YES

Matte Tin (Sn)

GULL WING

DUAL

30

DF005SA-E3/45 by Vishay Intertechnology

DF005SA-E3/45

Vishay Intertechnology

Vishay Intertechnology's DF005SA-E3/45 is a bridge rectifier diode with 4 elements, matte tin finish, and small outline package. It has a max output current of 1A, forward voltage of 1.1V, and operates b/w -55°C to 150°C. Ideal for applications requiring reliable rectification in compact electronic devices.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

e3

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

UL RECOGNIZED

50 V

Bridge Rectifier Diodes

YES

MATTE TIN

GULL WING

DUAL

RMB2S-E3/80 by Vishay Intertechnology

RMB2S-E3/80

Vishay Intertechnology

Vishay Intertechnology's RMB2S-E3/80 is a bridge rectifier diode with 4 elements, matte tin terminals, and peak reflow temp of 260°C. It operates b/w -55 to 150°C, has a breakdown voltage of 200V, and max output current of 0.5A. Ideal for applications requiring fast reverse recovery time like power supplies and industrial controls.

200 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.25 V

TO-269AA

R-PDSO-G4

e3

1

30 A

4

1

4

150 Cel

-55 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

UL RECOGNIZED

200 V

.15 us

Bridge Rectifier Diodes

YES

Matte Tin (Sn)

GULL WING

DUAL

40

STTH60RQ06-M2Y by STMicroelectronics

STTH60RQ06-M2Y

STMicroelectronics

STTH60RQ06-M2Y by STMicroelectronics is a bridge rectifier diode ideal for high-efficiency applications. It features a max reverse recovery time of 0.055 µs, supports up to 30 A output current, and operates in temperatures from -40 °C to 175 °C. Its compact design ensures reliable performance in various electronic circuits.

600 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

2.95 V

R-PDSO-G9

180 A

4

1

9

175 Cel

-40 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

600 V

40 uA

.055 us

600 V

YES

GULL WING

DUAL

NOT SPECIFIED

NSR1030QMUTAG by Onsemi

NSR1030QMUTAG

Onsemi

NSR1030QMUTAG by Onsemi is a Bridge Rectifier Diode with 4 elements, Schottky technology, and 1A output current. It has a reverse test voltage of 30V and max power dissipation of 1.8W. Ideal for applications requiring fast reverse recovery time and low forward voltage drop in compact designs.

30 V

CATHODE

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.6 V

S-PDSO-N4

12 A

4

1

4

125 Cel

1 A

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

1.8 W

20 uA

.025 us

30 V

YES

SCHOTTKY

NO LEAD

DUAL

NOT SPECIFIED

NSR2030QMUTAG by Onsemi

NSR2030QMUTAG

Onsemi

NSR2030QMUTAG by Onsemi is a Schottky bridge rectifier diode with 4 elements, offering a max output current of 2A and forward voltage of 0.65V. With a reverse test voltage of 30V and fast recovery time of 0.034us, it is ideal for applications requiring efficient power conversion in compact electronic devices.

30 V

CATHODE

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.65 V

S-PDSO-N4

12.5 A

4

1

4

125 Cel

2 A

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

2.08 W

20 uA

.034 us

30 V

YES

SCHOTTKY

NO LEAD

DUAL

NOT SPECIFIED

MSB10M-13 by Diodes Incorporated

MSB10M-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-F4

e3

35 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

YES

MATTE TIN

FLAT

DUAL

MSB12M-13 by Diodes Incorporated

MSB12M-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-F4

e3

45 A

4

1

4

150 Cel

-55 Cel

1.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

YES

MATTE TIN

FLAT

DUAL

MSB08M-13 by Diodes Incorporated

MSB08M-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-F4

e3

30 A

4

1

4

150 Cel

-55 Cel

.8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

YES

MATTE TIN

FLAT

DUAL

DFBR030U3LP-13 by Diodes Incorporated

DFBR030U3LP-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 8; Surface Mount: YES; Package Shape: SQUARE;

30 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.42 V

S-PDSO-N8

e4

1

20 A

4

1

8

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

1 W

IEC-61000-4-2

30 V

400 uA

30 V

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

CD-MBL208S by Bourns

CD-MBL208S

Bourns

CD-MBL208S by Bourns is a bridge rectifier diode with 4 elements, capable of handling up to 2A output current and 800V peak reverse voltage. It operates b/w -55°C to 175°C, making it suitable for various applications requiring reliable rectification in compact spaces.

LOW POWER LOSS

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-N4

e3

1

50 A

4

1

4

175 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

800 V

YES

TIN

NO LEAD

DUAL

30

DF005ST-G by Comchip Technology

DF005ST-G

Comchip Technology

DF005ST-G by Comchip Technology is a bridge rectifier diode with 4 elements, max output current of 1A, and peak reflow temperature of 260°C. It is used in applications requiring small outline package style and UL recognized reference standard compliance.

50 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UL RECOGNIZED

50 V

Bridge Rectifier Diodes

YES

GULL WING

DUAL

30

DF10ST-G by Comchip Technology

DF10ST-G

Comchip Technology

DF10ST-G by Comchip Technology is a bridge rectifier diode with 4 elements, max output current of 1A, and max repetitive peak reverse voltage of 1000V. It is designed for applications requiring small outline surface mount packages in electronic circuits operating b/w -55°C to 150°C.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UL RECOGNIZED

1000 V

Bridge Rectifier Diodes

YES

GULL WING

DUAL

30

DF01S-HF by Comchip Technology

DF01S-HF

Comchip Technology

DF01S-HF by Comchip Tech is a bridge rectifier diode with 4 elements, max output current of 1A, and max repetitive peak reverse voltage of 100V. It operates b/w -55°C to 150°C, ideal for applications requiring small outline surface mount diodes like power supplies and battery chargers.

100 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UL RECOGNIZED

100 V

YES

GULL WING

DUAL

NOT SPECIFIED

DB107ST-G by Comchip Technology

DB107ST-G

Comchip Technology

The Comchip Technology DB107ST-G is a bridge rectifier diode with 4 elements, capable of handling up to 1A output current and 1000V breakdown voltage. It is designed for applications requiring small outline surface mount packages, such as power supplies and battery chargers. Operating temperature ranges from -55°C to 150°C, meeting UL standards.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UL RECOGNIZED

1000 V

Bridge Rectifier Diodes

YES

GULL WING

DUAL

NOT SPECIFIED

LMB110S-TP-HF by Micro Commercial Components

LMB110S-TP-HF

Micro Commercial Components

LMB110S-TP-HF by Micro Commercial Components is a Schottky bridge rectifier diode with 4 elements, max output current of 1A, and max repetitive peak reverse voltage of 100V. It operates b/w -55°C to 150°C, suitable for applications requiring high efficiency and low power loss in compact electronic devices.

100 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

100 V

YES

SCHOTTKY

GULL WING

DUAL

RABF1510-13 by Diodes Incorporated

RABF1510-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

e3

1

50 A

4

1

4

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

YES

MATTE TIN

GULL WING

DUAL

30

RABF152-13 by Diodes Incorporated

RABF152-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

200 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

e3

1

50 A

4

1

4

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

YES

MATTE TIN

GULL WING

DUAL

30

RABF154-13 by Diodes Incorporated

RABF154-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

400 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

e3

1

50 A

4

1

4

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

400 V

YES

MATTE TIN

GULL WING

DUAL

30

RABF156-13 by Diodes Incorporated

RABF156-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

e3

1

50 A

4

1

4

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

YES

MATTE TIN

GULL WING

DUAL

30

RABF210-13 by Diodes Incorporated

RABF210-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

e3

1

60 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

YES

MATTE TIN

GULL WING

DUAL

30

RABF22-13 by Diodes Incorporated

RABF22-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

200 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

e3

1

60 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

YES

MATTE TIN

GULL WING

DUAL

30

RABF24-13 by Diodes Incorporated

RABF24-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

400 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

e3

1

60 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

400 V

YES

MATTE TIN

GULL WING

DUAL

30

RABF26-13 by Diodes Incorporated

RABF26-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

e3

1

60 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

YES

MATTE TIN

GULL WING

DUAL

30

RABF28-13 by Diodes Incorporated

RABF28-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

800 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

e3

1

60 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

800 V

YES

MATTE TIN

GULL WING

DUAL

30

RDBF151U-13 by Diodes Incorporated

RDBF151U-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

100 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PDSO-F4

e3

1

70 A

4

1

4

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

5 uA

.15 us

100 V

YES

MATTE TIN

FLAT

DUAL

RDBF152U-13 by Diodes Incorporated

RDBF152U-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

200 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PDSO-F4

e3

1

70 A

4

1

4

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

5 uA

.15 us

200 V

YES

MATTE TIN

FLAT

DUAL

RDBF154U-13 by Diodes Incorporated

RDBF154U-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

400 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PDSO-F4

e3

1

70 A

4

1

4

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

400 V

5 uA

.15 us

400 V

YES

MATTE TIN

FLAT

DUAL

RDBF156U-13 by Diodes Incorporated

RDBF156U-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PDSO-F4

e3

1

70 A

4

1

4

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

5 uA

.25 us

600 V

YES

MATTE TIN

FLAT

DUAL

RDBF158U-13 by Diodes Incorporated

RDBF158U-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

800 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PDSO-F4

e3

1

70 A

4

1

4

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

800 V

5 uA

.5 us

800 V

YES

MATTE TIN

FLAT

DUAL

RDBF251-13 by Diodes Incorporated

RDBF251-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

100 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PDSO-F4

e3

1

75 A

4

1

4

150 Cel

-55 Cel

2.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

5 uA

.15 us

100 V

YES

MATTE TIN

FLAT

DUAL

RDBF2510-13 by Diodes Incorporated

RDBF2510-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PDSO-F4

e3

1

75 A

4

1

4

150 Cel

-55 Cel

2.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

5 uA

.5 us

1000 V

YES

MATTE TIN

FLAT

DUAL

RDBF252-13 by Diodes Incorporated

RDBF252-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

200 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PDSO-F4

e3

1

75 A

4

1

4

150 Cel

-55 Cel

2.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

5 uA

.15 us

200 V

YES

MATTE TIN

FLAT

DUAL

RDBF258-13 by Diodes Incorporated

RDBF258-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

800 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PDSO-F4

e3

1

75 A

4

1

4

150 Cel

-55 Cel

2.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

800 V

5 uA

.5 us

800 V

YES

MATTE TIN

FLAT

DUAL