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STTH60RQ06-M2Y

STMicroelectronics

STTH60RQ06-M2Y by STMicroelectronics

STTH60RQ06-M2Y by STMicroelectronics is a bridge rectifier diode ideal for high-efficiency applications. It features a max reverse recovery time of 0.055 µs, supports up to 30 A output current, and operates in temperatures from -40 °C to 175 °C. Its compact design ensures reliable performance in various electronic circuits.

Median Price

$15.900

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 3,400 parts In-Stock

1+ parts

$15.900

100+ parts

$12.383

1k+ parts

$11.400

10k+ parts

-

3,400

$15.900

$12.383

$11.400

-

Mouser Electronics

USA . 50 parts In-Stock

1+ parts

$17.510

100+ parts

$10.360

1k+ parts

-

10k+ parts

-

50

$17.510

$10.360

-

-

Newark

USA . 19 parts In-Stock

1+ parts

$18.040

100+ parts

$10.670

1k+ parts

-

10k+ parts

-

19

$18.040

$10.670

-

-

DigiKey

USA . 27 parts In-Stock

1+ parts

$18.250

100+ parts

$12.295

1k+ parts

$9.056

10k+ parts

-

27

$18.250

$12.295

$9.056

-

Element14

Singapore . 71 parts In-Stock

1+ parts

$1,366.040

100+ parts

$1,048.090

1k+ parts

$968.640

10k+ parts

-

71

$1,366.040

$1,048.090

$968.640

-

Arrow

USA . 3,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$8.992

10k+ parts

-

3,400

-

-

$8.992

-

Verical

USA . 3,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$8.992

10k+ parts

-

3,400

-

-

$8.992

-

Avnet

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

400

-

-

-

-

Farnell

UK . 76 parts In-Stock

1+ parts

-

100+ parts

$7.450

1k+ parts

$7.100

10k+ parts

-

76

-

$7.450

$7.100

-

Rochester

USA . 10 parts In-Stock

1+ parts

-

100+ parts

$11.330

1k+ parts

$10.140

10k+ parts

$9.540

10

-

$11.330

$10.140

$9.540

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,335 parts In-Stock

1+ parts

$12.720

100+ parts

-

1k+ parts

-

10k+ parts

-

4,335

$12.720

-

-

-

Vyrian

USA . 6,389 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,389

-

-

-

-

Anansix

USA . 2,846 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,846

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 479 parts In-Stock

1+ parts

$0.171

100+ parts

-

1k+ parts

$0.154

10k+ parts

-

479

$0.171

-

$0.154

-

MKK Technologies

India . 2,342 parts In-Stock

1+ parts

$0.322

100+ parts

-

1k+ parts

-

10k+ parts

-

2,342

$0.322

-

-

-

DigiPath Technology Company

USA . 2,342 parts In-Stock

1+ parts

$0.322

100+ parts

-

1k+ parts

-

10k+ parts

-

2,342

$0.322

-

-

-

Continental Prestige Electronics

USA . 84 parts In-Stock

1+ parts

$11.940

100+ parts

$8.580

1k+ parts

-

10k+ parts

-

84

$11.940

$8.580

-

-

Corphita

USA . 2,221 parts In-Stock

1+ parts

$12.051

100+ parts

-

1k+ parts

-

10k+ parts

-

2,221

$12.051

-

-

-

Microchip USA

USA . 2,309 parts In-Stock

1+ parts

$41.053

100+ parts

-

1k+ parts

-

10k+ parts

-

2,309

$41.053

-

-

-

Parana Technologies

USA . 1,531 parts In-Stock

1+ parts

-

100+ parts

$0.205

1k+ parts

-

10k+ parts

-

1,531

-

$0.205

-

-

Overview

Unlock unparalleled efficiency and reliability with the STTH60RQ06-M2Y Bridge Rectifier Diode from STMicroelectronics. Renowned for their commitment to quality, STMicroelectronics delivers top-tier solutions that enhance performance across a spectrum of applications, from power supplies to automotive systems. Experience reduced energy loss, robust thermal management, and exceptional durability, all while enjoying the peace of mind that comes from choosing a trusted industry leader. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and reliability, making it suitable for various environmental conditions.

Config: BRIDGE, 4 ELEMENTS

The bridge configuration allows for full-wave rectification, enhancing efficiency in converting AC to DC.

Surface Mount: YES

Surface mount capability enables easier integration into compact circuit designs, promoting space-saving applications.

Maximum Reverse Recovery Time: 0.055 us

This fast reverse recovery time minimizes power loss and improves efficiency in switching applications.

Maximum Reverse Current: 40 uA

Low reverse current contributes to better energy efficiency and reduces heat generation, enhancing overall reliability.

Package Shape: RECTANGULAR

The rectangular package shape provides a standard footprint, allowing easy interchangeability with other components.

Reverse Test Voltage: 600 V

A high reverse test voltage ensures that the diode can withstand harsh voltage conditions, increasing durability.

No. of Terminals: 9

The nine terminals facilitate versatile connection options in circuit designs, providing flexibility in applications.

Package Style (Meter): SMALL OUTLINE

A small outline package style helps to decrease the overall size of electronic circuits, making it ideal for compact devices.

Maximum Operating Temperature: 175 °C

High operating temperature tolerance allows for reliable performance in extreme conditions, ensuring longevity of the product.

Minimum Operating Temperature: -40 °C

A wide operational temperature range accommodates a variety of thermal environments, making it adaptable for different applications.

Terminal Position: DUAL

Dual terminal positioning allows for versatile mounting options, improving installation flexibility.

Case Connection: ISOLATED

Isolated case connection enhances safety by reducing the risk of short circuits, making it a safer choice for users.

Minimum Breakdown Voltage: 600 V

A high breakdown voltage specification provides assurance of reliability in high-voltage applications.

Diode Type: BRIDGE RECTIFIER DIODE

As a bridge rectifier diode, it efficiently converts AC to DC, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 2.95 V

This relatively low forward voltage drop enhances energy efficiency during operation.

Maximum Output Current: 30 A

A high output current rating allows the diode to handle substantial loads, making it suitable for various applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering capabilities, ensuring secure connections and reliability in electronic circuits.

No. of Elements: 4

Having four elements maximizes rectification capability, enhancing overall efficiency in power conversion.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating ensures robustness in protecting circuits from voltage spikes.

Maximum Non Repetitive Peak Forward Current: 180 A

Capable of handling high non-repetitive peak currents makes it resilient to surges, increasing reliability.

Diode Element Material: SILICON

Silicon material provides excellent electrical properties and stability, enhancing overall performance.

Technical Specifications

Bridge Rectifier Diodes STTH60RQ06-M2Y attributes and parameters. Explore more Bridge Rectifier Diodes devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

600 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

2.95 V

JESD-30 Code:

R-PDSO-G9

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

9

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

40 uA

Maximum Reverse Recovery Time:

.055 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH60RQ06-M2Y Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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