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DSRHD10-13

Diodes Incorporated

DSRHD10-13 by Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 728 parts In-Stock

1+ parts

$0.106

100+ parts

-

1k+ parts

-

10k+ parts

$0.102

728

$0.106

-

-

$0.102

Northwest PG Solutions

USA . 1,079 parts In-Stock

1+ parts

$0.116

100+ parts

-

1k+ parts

-

10k+ parts

$0.103

1,079

$0.116

-

-

$0.103

AZTECH Wire

Italy . 1,085 parts In-Stock

1+ parts

$11.260

100+ parts

-

1k+ parts

-

10k+ parts

-

1,085

$11.260

-

-

-

Perfect Parts

USA . 33,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,600

-

-

-

-

Technical Specifications

Bridge Rectifier Diodes DSRHD10-13 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

1000 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

YES

Technology:

BLANK

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DSRHD10-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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