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NSR1030QMUTAG

Onsemi

NSR1030QMUTAG by Onsemi

NSR1030QMUTAG by Onsemi is a Bridge Rectifier Diode with 4 elements, Schottky technology, and 1A output current. It has a reverse test voltage of 30V and max power dissipation of 1.8W. Ideal for applications requiring fast reverse recovery time and low forward voltage drop in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,770 parts In-Stock

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3,770

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Digiode

USA . 1,178 parts In-Stock

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1,178

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.146

100+ parts

$0.133

1k+ parts

$0.120

10k+ parts

-

500

$0.146

$0.133

$0.120

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Ampacity Inc.

Singapore . 1,496 parts In-Stock

1+ parts

$3.010

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1,496

$3.010

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AZTECH Wire

Italy . 674 parts In-Stock

1+ parts

$9.150

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674

$9.150

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SupplyDigital Components

Austria . 7,559 parts In-Stock

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7,559

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Perfect Parts

USA . 7,056 parts In-Stock

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7,056

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Kulean Microsystems

USA . 6,908 parts In-Stock

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6,908

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Problanco Electronics

Mexico . 6,153 parts In-Stock

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6,153

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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TANS Electronics

Latvia . 2,608 parts In-Stock

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2,608

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Corphita

USA . 1,483 parts In-Stock

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1,483

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UHIMA Technologies

Türkiye . 712 parts In-Stock

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712

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Corohmni

South Africa . 197 parts In-Stock

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197

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Overview

Upgrade your electronic projects with the NSR1030QMUTAG by Onsemi, a top-quality bridge rectifier diode designed for optimal performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode offers superior efficiency and durability. Ideal for various applications, this product provides customers with exceptional value, benefits, and advantages. Trust Onsemi to deliver high-quality components for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the diodes, making them suitable for various operating environments.

Maximum Reverse Recovery Time: 0.025 us

The fast reverse recovery time ensures efficient and quick operation of the diodes, making them ideal for high-speed applications.

Maximum Power Dissipation: 1.8 W

With a high power dissipation capacity, these diodes can handle heat effectively, enhancing their reliability and performance.

Technology: SCHOTTKY

The Schottky technology used in these diodes results in lower forward voltage drop and faster switching speeds, improving overall efficiency.

Technical Specifications

Bridge Rectifier Diodes NSR1030QMUTAG attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

CATHODE

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

S-PDSO-N4

Maximum Non Repetitive Peak Forward Current:

12 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

1.8 W

Maximum Reverse Current:

20 uA

Maximum Reverse Recovery Time:

.025 us

Reverse Test Voltage:

30 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NSR1030QMUTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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