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NSR2030QMUTAG

Onsemi

NSR2030QMUTAG by Onsemi

NSR2030QMUTAG by Onsemi is a Schottky bridge rectifier diode with 4 elements, offering a max output current of 2A and forward voltage of 0.65V. With a reverse test voltage of 30V and fast recovery time of 0.034us, it is ideal for applications requiring efficient power conversion in compact electronic devices.

Median Price

$0.830

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,000 parts In-Stock

1+ parts

$0.330

100+ parts

$0.310

1k+ parts

$0.280

10k+ parts

-

1,000

$0.330

$0.310

$0.280

-

Element14

Singapore . 2,211 parts In-Stock

1+ parts

$1.330

100+ parts

$0.707

1k+ parts

$0.566

10k+ parts

$0.461

2,211

$1.330

$0.707

$0.566

$0.461

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,057 parts In-Stock

1+ parts

$0.314

100+ parts

-

1k+ parts

-

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2,057

$0.314

-

-

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Vyrian

USA . 3,696 parts In-Stock

1+ parts

-

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-

1k+ parts

-

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3,696

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.194

100+ parts

$0.177

1k+ parts

$0.159

10k+ parts

-

70

$0.194

$0.177

$0.159

-

Corphita

USA . 1,589 parts In-Stock

1+ parts

$0.297

100+ parts

-

1k+ parts

-

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1,589

$0.297

-

-

-

Corohmni

South Africa . 422 parts In-Stock

1+ parts

$0.330

100+ parts

-

1k+ parts

-

10k+ parts

-

422

$0.330

-

-

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AZTECH Wire

Italy . 1,154 parts In-Stock

1+ parts

$14.420

100+ parts

-

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1,154

$14.420

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Perfect Parts

USA . 33,757 parts In-Stock

1+ parts

-

100+ parts

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33,757

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QUARKTWIN TECHNOLOGY LTD

USA . 26,206 parts In-Stock

1+ parts

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26,206

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Problanco Electronics

Mexico . 6,399 parts In-Stock

1+ parts

-

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6,399

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Continental Prestige Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.476

10k+ parts

-

6,000

-

-

$0.476

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SupplyDigital Components

Austria . 5,853 parts In-Stock

1+ parts

-

100+ parts

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5,853

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,000

-

-

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GreenTree Electronics

Israel . 3,468 parts In-Stock

1+ parts

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3,468

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TANS Electronics

Latvia . 2,758 parts In-Stock

1+ parts

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2,758

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Kulean Microsystems

USA . 1,606 parts In-Stock

1+ parts

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1,606

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UHIMA Technologies

Türkiye . 903 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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903

-

-

-

-

Overview

Upgrade your electronic devices with the NSR2030QMUTAG bridge rectifier diode by Onsemi. Known for their top-quality components, Onsemi delivers reliable and efficient solutions for a wide range of applications. This small outline package offers fast reverse recovery time and low reverse current, ensuring optimal performance in your circuit designs. With a maximum output current of 2A and a breakdown voltage of 30V, this Schottky technology diode is a must-have for your next project. Trust Onsemi for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a long lifespan and reliability.

No. of Terminals: 4

Allows for easy installation and connection in various electronic circuits.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Diode Type: BRIDGE RECTIFIER DIODE

Specifically designed for converting alternating current (AC) to direct current (DC), making it ideal for power supply applications.

Maximum Output Current: 2 A

Capable of handling a decent amount of current, suitable for medium to high power applications.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching characteristics, increasing efficiency and performance.

Technical Specifications

Bridge Rectifier Diodes NSR2030QMUTAG attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

CATHODE

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

S-PDSO-N4

Maximum Non Repetitive Peak Forward Current:

12.5 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

2.08 W

Maximum Reverse Current:

20 uA

Maximum Reverse Recovery Time:

.034 us

Reverse Test Voltage:

30 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NSR2030QMUTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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