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NSR2030QMUTWG

Onsemi

NSR2030QMUTWG by Onsemi

NSR2030QMUTWG by Onsemi is a Bridge Rectifier Diode with 4 elements, featuring a Max Reverse Recovery Time of 0.034 us and Max Reverse Current of 20 uA. This diode is ideal for applications requiring a small outline package style and Schottky technology, with a max output current of 2 A.

Median Price

$1.135

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,634 parts In-Stock

1+ parts

$1.130

100+ parts

$0.557

1k+ parts

$0.385

10k+ parts

$0.344

3,634

$1.130

$0.557

$0.385

$0.344

DigiKey

USA . 2,983 parts In-Stock

1+ parts

$1.140

100+ parts

$0.556

1k+ parts

$0.395

10k+ parts

$0.327

2,983

$1.140

$0.556

$0.395

$0.327

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.492

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.492

-

-

-

Digiode

USA . 2,477 parts In-Stock

1+ parts

$1.007

100+ parts

-

1k+ parts

-

10k+ parts

-

2,477

$1.007

-

-

-

Vyrian

USA . 2,794 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,794

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 359 parts In-Stock

1+ parts

$0.482

100+ parts

-

1k+ parts

-

10k+ parts

-

359

$0.482

-

-

-

Argo Parts USA

USA . 3,159 parts In-Stock

1+ parts

$0.492

100+ parts

-

1k+ parts

-

10k+ parts

$0.477

3,159

$0.492

-

-

$0.477

Continental Prestige Electronics

USA . 1,754 parts In-Stock

1+ parts

$0.492

100+ parts

-

1k+ parts

-

10k+ parts

$0.482

1,754

$0.492

-

-

$0.482

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.492

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.492

-

-

-

Ampacity Inc.

Singapore . 2,892 parts In-Stock

1+ parts

$0.900

100+ parts

-

1k+ parts

-

10k+ parts

-

2,892

$0.900

-

-

-

Corphita

USA . 1,195 parts In-Stock

1+ parts

$0.954

100+ parts

-

1k+ parts

-

10k+ parts

-

1,195

$0.954

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

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SupplyDigital Components

Austria . 6,793 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,793

-

-

-

-

Kulean Microsystems

USA . 5,268 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,268

-

-

-

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Problanco Electronics

Mexico . 5,047 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,047

-

-

-

-

TANS Electronics

Latvia . 4,185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,185

-

-

-

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UHIMA Technologies

Türkiye . 782 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

782

-

-

-

-

Overview

Upgrade your electronic devices with the NSR2030QMUTWG Bridge Rectifier Diode from Onsemi, a top-tier manufacturer known for quality and reliability. This versatile component is ideal for a wide range of applications, offering superior performance and efficiency. With fast reverse recovery time and low reverse current, this diode ensures optimal functionality and durability. Experience seamless operation and peace of mind with the NSR2030QMUTWG, a must-have for any electronics enthusiast or professional.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material makes the diode lightweight and durable, suitable for use in various electronic applications.

Maximum Reverse Recovery Time: 0.034 us

The fast reverse recovery time ensures efficient switching and minimal power loss in the circuit, making it suitable for high-speed applications.

Maximum Forward Voltage (VF): 0.65 V

The low forward voltage drop helps in reducing power dissipation and improving overall efficiency in the circuit.

Maximum Output Current: 2 A

The high output current capacity allows the diode to handle heavy loads, making it suitable for use in power supply and motor control applications.

Technology: SCHOTTKY

The Schottky technology used in the diode results in low forward voltage drop and fast switching speeds, making it ideal for high-frequency and high-efficiency applications.

Technical Specifications

Bridge Rectifier Diodes NSR2030QMUTWG attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

CATHODE

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

S-PDSO-N4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

12.5 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

2.08 W

Maximum Reverse Current:

20 uA

Maximum Reverse Recovery Time:

.034 us

Reverse Test Voltage:

30 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NSR2030QMUTWG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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