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CGH55015F1

Wolfspeed

CGH55015F1 by Wolfspeed

CGH55015F1 by Wolfspeed is a single N-channel RF power FET with a min DS breakdown voltage of 120V. It is designed for amplifier applications in the C band, utilizing high electron mobility gallium nitride technology. This surface mount transistor has a ceramic and metal-sealed co-fired package body material.

Median Price

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Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,643 parts In-Stock

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1,643

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Nova Conductors

Japan . 84 parts In-Stock

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84

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AZTECH Wire

Italy . 752 parts In-Stock

1+ parts

$17.301

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752

$17.301

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Looking for a powerful RF power field effect transistor? Look no further than the CGH55015F1 by Wolfspeed. With its high-quality construction and advanced technology, this N-channel enhancement mode transistor delivers outstanding performance in amplifier applications. Its ceramic, metal-sealed co-fired package ensures durability and reliability, while its gallium nitride element material guarantees exceptional electronic mobility. Whether you need to amplify signals or enhance overall efficiency, the CGH55015F1 is the perfect solution. Experience the value, benefits, and advantages that only Wolfspeed can offer. Upgrade your technology today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material ensures durability and reliability, making this product a good choice for long-lasting use in various environments.

Polarity or Channel Type: N-CHANNEL

The N-channel polarity or channel type extends compatibility with different circuit configurations, enhancing the versatility of this product for various applications.

Configuration: SINGLE

The single configuration simplifies installation and usage, making this product a convenient and user-friendly choice for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this product delivers efficient and reliable amplification performance, making it an excellent choice for such purposes.

Surface Mount: YES

With surface mount capability, this product offers easy and efficient integration onto circuit boards, providing a convenient solution for compact electronic designs.

Minimum DS Breakdown Voltage: 120 V

The minimum DS breakdown voltage of 120V ensures the product's ability to handle high voltage levels, making it a reliable choice for applications requiring high power outputs.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization, enabling easy integration into systems where space is a constraint.

Terminal Form: FLAT

The flat terminal form simplifies the connection process and ensures secure and stable electrical connections, making this product a reliable choice.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operating mode provides better control and improved performance characteristics, making this product an ideal choice for demanding amplifier applications.

Highest Frequency Band: C BAND

Operating in the C band frequency range, this product offers compatibility with a wide range of communication systems, making it a versatile choice for various RF applications.

No. of Elements: 1

With a single element, this product offers simplicity in design and ease of use, making it an efficient choice for applications requiring a single RF power field-effect transistor.

No. of Terminals: 2

The two-terminal configuration provides straightforward connectivity options, making this product an easy choice for circuit integration and installation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style ensures secure and stable mounting, making this product suitable for installations where stability and reliability are crucial.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

Utilizing high electron mobility technology, this product offers enhanced performance and efficiency, making it an excellent choice for high-frequency amplifier applications.

Transistor Element Material: GALLIUM NITRIDE

The gallium nitride transistor element material provides high power handling capability and excellent thermal characteristics, making this product a reliable choice for demanding RF power applications.

Terminal Finish: GOLD NICKEL

With a gold nickel terminal finish, this product ensures excellent conductivity and corrosion resistance, enhancing its reliability and longevity.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit layout and connectivity options, making this product suitable for a variety of installation requirements.

Case Connection: SOURCE

The case connection at the source enhances the product's ability to dissipate heat efficiently, ensuring reliable performance and prolonged lifespan in high-power applications.

Technical Specifications

RF Power Field Effect Transistors (FET) CGH55015F1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

120 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFM-F2

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

GOLD NICKEL

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

CGH55015F1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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